Patents by Inventor Tadatoshi Danno
Tadatoshi Danno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20150084135Abstract: A source interconnect and a drain interconnect are alternately provided between a plurality of transistor units. One bonding wire is connected to a source interconnect at a plurality of points. The other bonding wire is connected to a source interconnect at a plurality of points. In addition, one bonding wire is connected to a drain interconnect at a plurality of points. In addition, the other bonding wire is connected to a drain interconnect at a plurality of points.Type: ApplicationFiled: September 23, 2014Publication date: March 26, 2015Inventors: Yoshinao MIURA, Takashi NAKAMURA, Tadatoshi DANNO
-
Patent number: 8981538Abstract: The reliability of a semiconductor device is improved. A semiconductor device has a first metal plate and a second metal plate electrically isolated from the first metal plate. Over the first metal plate, a first semiconductor chip including a transistor element formed thereover is mounted. Whereas, over the second metal plate, a second semiconductor chip including a diode element formed thereover is mounted. Further, the semiconductor device has a lead group including a plurality of leads electrically coupled with the first semiconductor chip or the second semiconductor chip. The first and second metal plates are arranged along the X direction in which the leads are arrayed. Herein, the area of the peripheral region of the first semiconductor chip in the first metal plate is set larger than the area of the peripheral region of the second semiconductor chip in the second metal plate.Type: GrantFiled: October 8, 2013Date of Patent: March 17, 2015Assignee: Renesas Electronics CorporationInventors: Tadatoshi Danno, Toshiyuki Hata, Yuichi Machida
-
Publication number: 20150069594Abstract: A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a second portion located outwardly of the first portion and continued to the top surface of the tab, and a third portion located outwardly of the second portion and continued to the top surface of the tab to face the same direction as each of the first and second portions. In planar view, the outer edge of the semiconductor chip is located between the third portion and the second portion of the tab, and the outer edge of an adhesive material fixing the semiconductor chip to the tab is located between the semiconductor chip and the second portion.Type: ApplicationFiled: November 12, 2014Publication date: March 12, 2015Inventors: Keita TAKADA, Tadatoshi DANNO, Hirokazu KATO
-
Publication number: 20150060942Abstract: Sometimes to warp a group III nitride semiconductor and a silicon by the stress of the group III nitride semiconductor acting on the silicon. A semiconductor device includes a substrate, a buffer layer, and a semiconductor layer. A trench is formed on a sixth face of the semiconductor layer. The trench passes through the semiconductor layer and the buffer layer. The bottom of the trench reaches at least the inside of the substrate.Type: ApplicationFiled: August 8, 2014Publication date: March 5, 2015Inventors: Ippei Kume, Takashi Onizawa, Takashi Hase, Shigeru Hirao, Tadatoshi Danno
-
Patent number: 8912640Abstract: A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a second portion located outwardly of the first portion and continued to the top surface of the tab, and a third portion located outwardly of the second portion and continued to the top surface of the tab to face the same direction as each of the first and second portions. In planar view, the outer edge of the semiconductor chip is located between the third portion and the second portion of the tab, and the outer edge of an adhesive material fixing the semiconductor chip to the tab is located between the semiconductor chip and the second portion.Type: GrantFiled: July 2, 2012Date of Patent: December 16, 2014Assignee: Renesas Electronics CorporationInventors: Keita Takada, Tadatoshi Danno, Hirokazu Kato
-
Publication number: 20140299979Abstract: The reliability of a semiconductor device is improved. A semiconductor device has a first metal plate and a second metal plate electrically isolated from the first metal plate. Over the first metal plate, a first semiconductor chip including a transistor element formed thereover is mounted. Whereas, over the second metal plate, a second semiconductor chip including a diode element formed thereover is mounted. Further, the semiconductor device has a lead group including a plurality of leads electrically coupled with the first semiconductor chip or the second semiconductor chip. The first and second metal plates are arranged along the X direction in which the leads are arrayed. Herein, the area of the peripheral region of the first semiconductor chip in the first metal plate is set larger than the area of the peripheral region of the second semiconductor chip in the second metal plate.Type: ApplicationFiled: October 8, 2013Publication date: October 9, 2014Applicant: RENESAS ELECTRONICS CORPORATIONInventors: Tadatoshi DANNO, Toshiyuki HATA, Yuichi MACHIDA
-
Publication number: 20140084440Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.Type: ApplicationFiled: November 26, 2013Publication date: March 27, 2014Applicants: HITACHI HOKKAI SEMICONDUCTOR LTD., RENESAS ELECTRONICS CORPORATIONInventors: Hajime HASEBE, Tadatoshi DANNO, Yukihiro SATOU
-
Publication number: 20140054759Abstract: A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed on the semiconductor chip and the leads. End portions of the suspension leads positioned in an outer periphery portion of the sealing body are unexposed to the back surface of the sealing body, but are covered with the sealing body. Stand-off portions of the suspending leads are not formed in resin molding. When cutting the suspending leads, corner portions of the back surface of the sealing body are supported by a flat portion of a holder portion in a cutting die having an area wider than a cutting allowance of the suspending leads, whereby chipping of the resin is prevented.Type: ApplicationFiled: November 4, 2013Publication date: February 27, 2014Applicant: Renesas Electronics CorporationInventors: Tadatoshi DANNO, Hiroyoshi TAYA, Yoshiharu SHIMIZU
-
Patent number: 8618642Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.Type: GrantFiled: September 22, 2011Date of Patent: December 31, 2013Assignees: Renesas Electronics Corporation, Hitachi Hokkai Semiconductor Ltd.Inventors: Hajime Hasebe, Tadatoshi Danno, Yukihiro Satou
-
Patent number: 8592961Abstract: A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed on the semiconductor chip and the leads. End portions of the suspension leads positioned in an outer periphery portion of the sealing body are unexposed to the back surface of the sealing body, but are covered with the sealing body. Stand-off portions of the suspending leads are not formed in resin molding. When cutting the suspending leads, corner portions of the back surface of the sealing body are supported by a flat portion of a holder portion in a cutting die having an area wider than a cutting allowance of the suspending leads, whereby chipping of the resin is prevented.Type: GrantFiled: July 31, 2012Date of Patent: November 26, 2013Assignee: Renesas Electronics CorporationInventors: Tadatoshi Danno, Hiroyoshi Taya, Yoshiharu Shimizu
-
Patent number: 8581396Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.Type: GrantFiled: September 22, 2011Date of Patent: November 12, 2013Inventors: Hajime Hasebe, Tadatoshi Danno, Yukihiro Satou
-
Patent number: 8513785Abstract: The quality of a non-leaded semiconductor device is to be improved. The semiconductor device comprises a sealing body for sealing a semiconductor chip with resin, a tab disposed in the interior of the sealing body, suspension leads for supporting the tab, plural leads having respective to-be-connected surfaces exposed to outer edge portions of a back surface of the sealing body, and plural wires for connecting pads formed on the semiconductor chip and the leads with each other. End portions of the suspending leads positioned in an outer periphery portion of the sealing body are not exposed to the back surface of the sealing body, but are covered with the sealing body. Therefore, stand-off portions of the suspending leads are not formed in resin molding.Type: GrantFiled: May 5, 2011Date of Patent: August 20, 2013Assignee: Renesas Electronics CorporationInventors: Tadatoshi Danno, Hiroyoshi Taya, Yoshiharu Shimizu
-
Patent number: 8471379Abstract: A semiconductor device includes a semiconductor chip with first and second low noise amplifier for amplifying an inputted signal. The chip is mounted over a wiring substrate which includes first and second electrodes and first, second and third GND electrodes. The wiring substrate includes first and second conductor patterns, wherein the first conductor pattern electrically connects the first and second GND electrodes and surrounds the first and second electrodes in a plan view. The second conductor pattern electrically connects the first conductor pattern and the third GND electrode to each other and is arranged between the first and second electrodes in the plan view. The first conductor pattern extends toward an inside of the semiconductor chip from the first and second GND electrodes in the plan view.Type: GrantFiled: January 31, 2012Date of Patent: June 25, 2013Assignee: Renesas Electronics CorporationInventors: Tadatoshi Danno, Toru Nagamine, Hiroshi Mori, Tsukasa Ichinose
-
Publication number: 20130020691Abstract: A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed on the semiconductor chip and the leads. End portions of the suspension leads positioned in an outer periphery portion of the sealing body are unexposed to the back surface of the sealing body, but are covered with the sealing body. Stand-off portions of the suspending leads are not formed in resin molding. When cutting the suspending leads, corner portions of the back surface of the sealing body are supported by a flat portion of a holder portion in a cutting die having an area wider than a cutting allowance of the suspending leads, whereby chipping of the resin is prevented.Type: ApplicationFiled: July 31, 2012Publication date: January 24, 2013Inventors: Tadatoshi Danno, Hiroyoshi Taya, Yoshiharu Shimizu
-
Publication number: 20130009299Abstract: A semiconductor device is inhibited from being degraded in reliability. The semiconductor device has a tab including a top surface, a bottom surface, and a plurality of side surfaces. Each of the side surfaces of the tab has a first portion continued to the bottom surface of the tab, a second portion located outwardly of the first portion and continued to the top surface of the tab, and a third portion located outwardly of the second portion and continued to the top surface of the tab to face the same direction as each of the first and second portions. In planar view, the outer edge of the semiconductor chip is located between the third portion and the second portion of the tab, and the outer edge of an adhesive material fixing the semiconductor chip to the tab is located between the semiconductor chip and the second portion.Type: ApplicationFiled: July 2, 2012Publication date: January 10, 2013Inventors: Keita TAKADA, Tadatoshi Danno, Hirokazu Kato
-
Publication number: 20120126900Abstract: A semiconductor device includes a semiconductor chip with first and second low noise amplifier for amplifying an inputted signal. The chip is mounted over a wiring substrate which includes first and second electrodes and first, second and third GND electrodes. The wiring substrate includes first and second conductor patterns, wherein the first conductor pattern electrically connects the first and second GND electrodes and surrounds the first and second electrodes in a plan view. The second conductor pattern electrically connects the first conductor pattern and the third GND electrode to each other and is arranged between the first and second electrodes in the plan view. The first conductor pattern extends toward an inside of the semiconductor chip from the first and second GND electrodes in the plan view.Type: ApplicationFiled: January 31, 2012Publication date: May 24, 2012Inventors: Tadatoshi DANNO, Toru NAGAMINE, Hiroshi MORI, Tsukasa ICHINOSE
-
Patent number: 8126501Abstract: This invention provides a high frequency power module which is incorporated into a mobile phone and which incorporates high frequency portion analogue signal processing ICs including low noise amplifiers which amplify an extremely weak signal therein. A semiconductor device includes a sealing body which is made of insulation resin, a plurality of leads which are provided inside and outside the sealing body, a tab which is provided inside the sealing body and has a semiconductor element fixing region and a wire connection region on a main surface thereof, a semiconductor element which is fixed to the semiconductor element fixing region and includes electrode terminals on an exposed main surface, conductive wires which connect electrode terminals of the semiconductor element and the leads, and conductive wires which connect electrode terminals of the semiconductor element and the wire connecting region of the tab.Type: GrantFiled: April 26, 2011Date of Patent: February 28, 2012Assignee: Renesas Electronics CorporationInventors: Tadatoshi Danno, Tsutomu Tsuchiya
-
Patent number: 8120174Abstract: The present invention provides a technique capable of suppressing variations in the height of each solder ball where an NSMD is used as a structure for each land. Vias that extend through a wiring board are provided. Lands are formed at the back surface of the wiring board so as to be coupled directly to the vias respectively. The lands are respectively formed so as to be internally included in openings defined in a solder resist. Half balls are mounted over the lands respectively. Namely, the present invention has a feature in that the configuration of coupling between each of the lands and its corresponding via both formed at the back surface of the wiring board is taken as a land on via structure and a configuration form of each land is taken as an NSMD.Type: GrantFiled: July 11, 2011Date of Patent: February 21, 2012Assignee: Renesas Electronics CorporationInventor: Tadatoshi Danno
-
Patent number: 8115295Abstract: A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for converting the frequency of a signal supplied from a baseband. A plurality of ball electrodes are provided on the back surface of the package substrate. The package substrate is provided with a first common GND wire for supplying a GND potential to each of the LNAs, with a second common GND wire for supplying the GND potential to the RF VCO, and with a third common GND wire for supplying the GND potential to the IF VCO. The first, second, and third common GND wires are separated from each other.Type: GrantFiled: February 3, 2011Date of Patent: February 14, 2012Assignee: Renesas Electronics CorporationInventors: Tadatoshi Danno, Toru Nagamine, Hiroshi Mori, Tsukasa Ichinose
-
Publication number: 20120007225Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.Type: ApplicationFiled: September 22, 2011Publication date: January 12, 2012Applicants: HITACHI HOKKAI SEMICONDUCTOR LTD., RENESAS ELECTRONICS CORPORATIONInventors: Hajime HASEBE, Tadatoshi DANNO, Yukihiro SATOU