Abstract: There is provided a technique that includes (a) a process chamber configured to accommodate a plurality of substrates arranged vertically, provided with a product region and a dummy region and including a main exhauster on a lateral side thereof, (b) a first injector extending vertically within the process chamber on an opposite side from the main exhauster, and configured to supply a first precursor toward the substrates accommodated in the product region and the dummy region, (c) at least one selected from the group of a second injector and a third injector, wherein the second injector supplies an assist gas for diluting the first precursor toward substrates and the third injector supplies an inert gas toward the substrates accommodated in the product region and the substrates accommodated in the dummy region; and (d) a fourth injector configured to supply an inert gas only to the dummy region.

Abstract: Copper particles are provided mainly containing a copper element. In the copper particles, a ratio (S1/B) of a first crystallite size S1 to a particle size B is 0.23 or less, where the first crystallite size is obtained using Scherrer equation from a full width at half maximum of a peak derived from (111) plane of copper in X-ray diffraction measurement, and the particle size is calculated from a BET specific surface area. In the copper particles, a ratio (S1/S2) of the first crystallite size S1 to a second crystallite size S2 is 1.35 or less, where the second crystallite size is obtained using Scherrer equation from a full width at half maximum of a peak derived from (220) plane of copper in X-ray diffraction measurement. A method for manufacturing the copper particles is also provided.

Abstract: A resin composition including: at least one resin ingredient selected from the group made of a resin (A) having a side chain (a) containing a hydrogen-bonding cross-linking moiety with a carbonyl-containing group and/or a nitrogen-containing heterocycle and having a glass transition point of 25° C. or lower, and a resin (B) containing a hydrogen-bonding cross-linking moiety and a covalent-bonding cross-linking moiety in a side chain and having a glass transition point of 25° C. or lower, wherein both the resin (A) and the resin (B) are a reaction product of a cross-linking agent with a maleic anhydride-modified thermoplastic resin having a melting point of 68° C. to 134° C. and a maleation rate of 0.5 to 2.5% by mass.

Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Abstract: Described herein is a technique capable of adjusting a balance in film thickness between surfaces of a plurality of substrates stacked in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: a process chamber capable of accommodating a plurality of substrates; a gas supplier configured to supply a process gas to the plurality of the substrates in the process chamber; a gas exhauster configured to discharge the process gas from the process chamber; and a plurality of disks interposed between the plurality of the substrates, respectively, and in vicinity of back surfaces of the plurality of the substrates.

Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Abstract: There is provided a technique that includes a first opening and a second opening which supply gases to a process chamber in which a substrate is arranged, and is configured such that: the first opening and the second opening are arranged in a direction parallel to a surface of the substrate, a gas supplied from the first opening is supplied toward a center of the substrate, a gas supplied from the second opening is supplied toward a peripheral edge of the substrate, and a direction of the gas supplied from the second opening forms a predetermined angle with respect to a direction of the gas supplied from the first opening.

Abstract: There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.

Abstract: According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Abstract: Copper particles are provided that each include a core particle made of copper and a coating layer that coats the surface of the core particle, wherein the coating layer is made of a copper salt of an aliphatic organic acid. It is also preferable that the copper particles have an infrared absorption peak in a range of 1504 to 1514 cm?1 and no infrared absorption peak in a range of 1584 to 1596 cm?1. It is also preferable that, in thermogravimetric analysis of the copper particles, the temperature at which the ratio of the mass loss value to the mass loss value at 500° C. reaches 10% is from 150° C. to 220° C. A method is also provided for producing copper particles, the method including bringing core particles made of copper into contact with a solution containing a copper salt of an aliphatic organic acid to thereby coat the surface of the core particles.

Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Abstract: There is provided a technique capable of uniformizing a flow of a gas discharged from a discharger by reducing a pressure difference in a substrate arrangement region of a process chamber. According to one aspect of the technique, there is provided a reaction tube in which a process chamber is provided and including an adjusting structure configured to suppress a flow of a gas discharged from a discharger, wherein a gas supplier is provided at one end of the process chamber and the discharger is provided at the other end of the process chamber, and a flow of the gas from the gas supplier to the discharger in the process chamber is adjusted by the adjusting structure such that the flow of the gas discharged from the discharger is uniformized.

Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Abstract: Provided is a powder material for producing a three-dimensional object including: a base material; a resin; and resin particles, wherein an amount W (mass %) of carbon remaining in the powder material after heating in a vacuum of 10?2 Pa or lower at 450 degrees C. for 2 hours satisfies the following formula: W (mass %)<0.9/M, where M represents the specific gravity of the base material.

Abstract: According to an embodiment, a three-dimensional fabricating apparatus includes a supply unit, a flattening unit, a discharge unit, and a controller. The supply unit is configured to supply powder. The flattening unit is configured to flatten a surface of the supplied powder and form a powder layer. The discharge unit is configured to discharge a first fabrication liquid solidifying the powder and a second fabrication liquid not solidifying the powder onto a surface of the powder layer. The controller is configured to cause the discharge unit to discharge the first fabrication liquid and the second fabrication liquid in accordance with a discharge pattern in which the second fabrication liquid is discharged to a region adjacent to at least some of a plurality of regions in which the first fabrication liquid is discharged.

Abstract: According to some embodiments of the present disclosure, there is provided a technique that includes: a process gas nozzle configured to supply a process gas into a process chamber; two or more inert gas nozzles installed at each of both sides of the process gas nozzle in a circumferential direction of the process chamber and configured to supply an inert gas into the process chamber; a process gas supplier configured to supply the process gas to the process gas nozzle; an inert gas supplier configured to supply the inert gas to each of the inert gas nozzles; and a controller configured to be capable of controlling a flow rate of the process gas supplied from the process gas supplier to the process gas nozzle and a flow rate of the inert gas supplied from the inert gas supplier to each of the inert gas nozzles, respectively.

Abstract: A three-dimensional shaping apparatus includes: a supplying unit configured to supply powder to a storage unit to form a layer of the powder; a discharging unit configured to discharge shaping liquid to solidify the powder onto the powder; and a controlling unit configured to generate a control signal for controlling the supplying unit and the discharging unit based on shaping data indicating a shape of a three-dimensional shaped object. The controlling unit is configured to generate the control signal for laminating at least one sacrificial layer separable from at least one shaping layer corresponding to the three-dimensional shaped object in such a position that the at least one sacrificial layer is under the at least one shaping layer, based on the shaping data and powder information stored in advance and indicating change in thickness of a layer of the powder caused by permeation of the shaping liquid.

Abstract: Described herein is a technique capable of adjusting a balance in film thickness between surfaces of a plurality of substrates stacked in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: a process chamber capable of accommodating a plurality of substrates; a gas supplier configured to supply a process gas to the plurality of the substrates in the process chamber; a gas exhauster configured to discharge the process gas from the process chamber; and a plurality of disks interposed between the plurality of the substrates, respectively, and in vicinity of back surfaces of the plurality of the substrates.

Abstract: Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.