Abstract: Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.

Abstract: An apparatus for producing three-dimensional objects is provided including a bonding liquid applier and a controller. The bonding liquid applier applies a bonding liquid to a powder layer to form a bonded layer. The controller controls the bonding liquid applier to repeatedly form an (n)th bonded layer by applying a predetermined amount of the bonding liquid per unit area, in multiple times, to a new bonding region in an (n)th powder layer, below which an (n?1)th bonded layer does not exist, and applying the predetermined amount of the bonding liquid per unit area, in a smaller number of times than the multiple times, to an existing bonding region in the (n)th powder layer, below which the (n?1)th bonded layer exists, while increasing a numeral (n) representing an integer of 1 and above in increment of 1, to laminate multiple bonded layers into a three-dimensional object.

Abstract: A numerical controller includes a work installation error compensation unit, and the work installation error compensation unit includes a tool position and direction calculation unit and an error compensation unit that selects the positions of two rotary axes according to a first method of selecting a solution close to a previous solution or a second method of selecting a solution close to a command value when a plurality of solutions is present. The numerical controller further includes a look ahead unit that looks ahead a program, and the work installation error compensation unit performs error compensation on the looked ahead command value according to the first method to obtain a compensation command value and sets the first method when the compensation command value is within a movable region of a five-axis machine tool while setting the second method when the compensation command value is outside the movable region.

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube; a substrate retainer; a cylindrical portion provided inside the reaction tube and concentric with the reaction tube and comprising a process chamber; a gas supply part in an annular gap between the reaction tube and the cylindrical portion; a gas supply port through which the gas supply part communicates with the process chamber; a first gas exhaust port provided at the cylindrical portion, through which the gap communicates with the process chamber; an outlet connected to the reaction tube at a location lower than the first gas exhaust port and opposite to the gas supply port; and a second gas exhaust port provided at the cylindrical portion at a location lower than the first gas exhaust port and aligned with a same orientation as the outlet.

Abstract: There is provided a technique that includes a substrate processing apparatus, comprising a process chamber having a cylindrical space configured to accommodate a substrate; and a plurality of nozzles communicating with a gas supply pipe and discharging processing gas in the process chamber, the process chamber includes a cylindrical reaction tube; a cylindrical manifold; and a lid, the lid includes a protection plate; and an introduction hole, the manifold includes a protection liner on an inner face of the manifold such that a second gap is formed between the manifold and the protection liner, the first gap being formed to allow the purge gas flowing toward the manifold to be deflected by the inner face of the manifold and to flow into the second gap.

Abstract: There is provided a technique that includes: a substrate holder; a reaction tube accommodating the substrate holder; a furnace body surrounding the reaction tube; a gas supplier including inlets corresponding to substrates held in the reaction tube and supplying gases from the inlets in parallel to surfaces of the substrates; and a gas exhauster including an outlet facing lateral sides of the substrates and exhausting the gases flowing on the surfaces of the substrates, wherein the substrate holder includes: annular members each arranged concentrically with the rotation axis at a predetermined pitch on planes orthogonal to the rotation axis; columns each arranged along a circumscribed circle substantially coinciding with outer circumferences of the annular members, and holding the plurality of annular members; and supports supporting the substrates at positions between two adjacent annular members.

Abstract: Provided is a powder material for producing a three-dimensional object including: a base material; a resin; and resin particles, wherein an amount W (mass %) of carbon remaining in the powder material after heating in a vacuum of 10?2 Pa or lower at 450 degrees C. for 2 hours satisfies the following formula: W (mass %)<0.9/M, where M represents the specific gravity of the base material.

Abstract: A three-dimensional fabrication apparatus includes a fabrication chamber, a liquid discharge device, a vibration applicator, and a controller. In the fabrication chamber, powder is layered to form a powder layer, the powder of the powder layer is bonded together in a desired shape to form a layered fabrication object, and another layered fabrication object is laminated on the layered fabrication object. The liquid discharge device discharges a fabrication liquid onto the powder in the fabrication chamber. The vibration applicator applies vibration to the powder layer onto which the fabrication liquid is discharged from the liquid discharge device. The controller controls and drives the vibration applicator to apply vibration to the powder layer when the liquid discharge device discharges the fabrication liquid onto the powder layer to form the layered fabrication object.

Abstract: There is provided a technique that includes: a process chamber accommodating a substrate support supporting substrates in multiple stages to process the substrates; a supply buffer part adjacent the process chamber; a first gas supply part installed in the supply buffer part; a second gas supply part installed in the supply buffer part; an inner wall installed between the supply buffer part and the process chamber, on which a plurality of slits are formed to correspond to the substrates; and a maintenance port disposed at a lower end of the inner wall, wherein the first gas supply part includes a first gas nozzle having a supply hole that supplies first gas into the supply buffer part.

Abstract: According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: There is provided a technique that includes a substrate processing apparatus, comprising a process chamber having a cylindrical space configured to accommodate a substrate; and a plurality of nozzles communicating with a gas supply pipe and discharging processing gas in the process chamber, the process chamber includes a cylindrical reaction tube; a cylindrical manifold; and a lid, the lid includes a protection plate; and an introduction hole, the manifold includes a protection liner on an inner face of the manifold such that a second gap is formed between the manifold and the protection liner, the first gap being formed to allow the purge gas flowing toward the manifold to be deflected by the inner face of the manifold and to flow into the second gap.

Abstract: A numerical controller analyzes a machining program, generates movement command data for moving a main spindle relative to a workpiece, causes an interpolation unit to perform interpolation processing based on the generated movement command data, and generates and outputs interpolation data for each interpolation cycle. Further, the interpolation unit performs provisional interpolation processing according to command speed F on a non-rotating coordinate system, converts a start point and an end point of provisional interpolation to positions on a rotating coordinate system to obtain speed F? on the rotating coordinate system, obtains a ratio r of the speed F? to the command speed F, and performs main interpolation processing at speed of F/r.

Abstract: A numerical controller includes a work installation error compensation unit, and the work installation error compensation unit includes a tool position and direction calculation unit and an error compensation unit that selects the positions of two rotary axes according to a first method of selecting a solution close to a previous solution or a second method of selecting a solution close to a command value when a plurality of solutions is present. The numerical controller further includes a look ahead unit that looks ahead a program, and the work installation error compensation unit performs error compensation on the looked ahead command value according to the first method to obtain a compensation command value and sets the first method when the compensation command value is within a movable region of a five-axis machine tool while setting the second method when the compensation command value is outside the movable region.

Abstract: Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

Abstract: A stereoscopic modeling apparatus including a modeling part, a modeling unit, and a controller is provided. The modeling part forms a powder layer with a powder. The modeling unit discharges droplets of a modeling liquid on the powder layer to form a modeling layer in which particles of the powder are bonded. The controller causes the modeling part and the modeling unit to repeat forming the powder layer and the modeling layer, respectively, to sequentially laminate the modeling layer to form a stereoscopic modeled product. The droplets include a preceding droplet and a succeeding droplet sequentially discharged to adjacent positions on the powder layer, and the succeeding droplet is discharged after the preceding droplet is discharged and within a time period in which a contact angle between the preceding droplet impacted on the powder layer and the powder in the powder layer remains greater than 90 degrees.

Abstract: According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube; a substrate retainer; a cylindrical portion provided inside the reaction tube and concentric with the reaction tube and comprising a process chamber; a gas supply part in an annular gap between the reaction tube and the cylindrical portion; a gas supply port through which the gas supply part communicates with the process chamber; a first gas exhaust port provided at the cylindrical portion, through which the gap communicates with the process chamber; an outlet connected to the reaction tube at a location lower than the first gas exhaust port and opposite to the gas supply port; and a second gas exhaust port provided at the cylindrical portion at a location lower than the first gas exhaust port and aligned with a same orientation as the outlet.