Abstract: A substrate processing apparatus includes: a reaction tube including inner and outer tubes installed to surround the inner tube; a substrate holder for holding substrates in a vertical direction; gas nozzles installed in a gap between the outer and inner tubes and having supply holes from which a gas is supplied toward an inlet port of the inner tube; a gas supply system for feeding gases to the reaction tube though the gas nozzles; an outlet port formed in the inner tube to flow out the gas; a discharge port for discharging the gas; a discharge part for discharging the gas staying in the gap from the discharge port; and a controller for controlling the gas supply system to supply a precursor gas and an inert gas and for causing the discharge part to purge the gas staying in the gap with the inert gas.

Abstract: A stereoscopic modeling apparatus is provided. The stereoscopic modeling apparatus includes a modeling tank, a liquid discharger, and a powder supplier. In the modeling tank, a powder layer including a powder is formed and a modeling layer in which the powder in the powder layer is bonded into a required shape is laminated. The liquid discharger discharges a modeling liquid to the powder in the modeling tank. The powder supplier supplies the powder to the modeling tank. The powder supplier supplies the powder to the powder layer while at least a part of the modeling liquid discharged from the liquid discharger and adhered to a surface of the powder layer remains existing on an outermost surface of the powder layer.

Abstract: There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.

Abstract: According to an embodiment, a three-dimensional fabricating apparatus includes a supply unit, a flattening unit, a discharge unit, and a controller. The supply unit is configured to supply powder. The flattening unit is configured to flatten a surface of the supplied powder and form a powder layer. The discharge unit is configured to discharge a first fabrication liquid solidifying the powder and a second fabrication liquid not solidifying the powder onto a surface of the powder layer. The controller is configured to cause the discharge unit to discharge the first fabrication liquid and the second fabrication liquid in accordance with a discharge pattern in which the second fabrication liquid is discharged to a region adjacent to at least some of a plurality of regions in which the first fabrication liquid is discharged.

Abstract: There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) forming a first layer by supplying a precursor to the substrate from a first nozzle and (b) forming a second layer by supplying a reactant to the substrate from a second nozzle different from the first nozzle to thereby modify the first layer. The act (a) includes sequentially performing (a-1) supplying an inert gas from the second nozzle at a first flow rate smaller than a flow rate of the precursor in a state in which the precursor is supplied from the first nozzle and (a-2) supplying an inert gas from the second nozzle at a second flow rate larger than the flow rate of the precursor in a state in which the precursor is supplied from the first nozzle.

Abstract: A control apparatus controls a three-dimensional object fabrication apparatus including a storing unit configured to store therein powder, a supplying unit configured to supply the powder to the storing unit in layers, and a discharge unit configured to discharge, onto the powder, a fabrication liquid for solidifying the powder. The control apparatus includes a controller configured to control a total amount of the powder supplied from the supplying unit to the storing unit based on fabrication data indicating a shape of a three-dimensional object and powder information indicating a change in dimension of a layer of the powder due to permeation of the fabrication liquid.

Abstract: A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a hydrogen-containing gas supply system including a first nozzle disposed in an area which horizontally surrounds a substrate arrangement area where the plurality of substrates are arranged, and configured to supply a hydrogen-containing gas from a plurality of locations of the area into the reaction tube; an oxygen-containing gas supply system including a second nozzle disposed in the area which horizontally surrounds the substrate arrangement area, and configured to supply an oxygen-containing gas from a plurality of locations of the area into the reaction tube; a pressure controller configured to control a pressure inside the reaction tube to be lower than an atmospheric pressure; and a controller configured to control the heater, the hydrogen-cont

Abstract: A substrate processing apparatus includes: a reaction tube including inner and outer tubes installed to surround the inner tube; a substrate holder for holding substrates in a vertical direction; gas nozzles installed in a gap between the outer and inner tubes and having supply holes from which a gas is supplied toward an inlet port of the inner tube; a gas supply system for feeding gases to the reaction tube though the gas nozzles; an outlet port formed in the inner tube to flow out the gas; a discharge port for discharging the gas; a discharge part for discharging the gas staying in the gap from the discharge port; and a controller for controlling the gas supply system to supply a precursor gas and an inert gas and for causing the discharge part to purge the gas staying in the gap with the inert gas.

Abstract: Described herein is a technique capable of improving uniformity between substrates. According to the technique, there is provided a substrate processing apparatus including: a substrate retainer including a product wafer support region for supporting product wafers with patterns in a stacked state, an upper dummy wafer support region for supporting dummy wafers above the product wafer support region, and a lower dummy wafer support region for supporting dummy wafers below the product wafer support region; a process chamber accommodating the substrate retainer; a gas supply system for supplying a gas to the substrate retainer, including a tubular nozzle vertically extending along the substrate retainer, and a gas supply port provided at the nozzle; and an exhaust system for exhausting an atmosphere of the process chamber. An upper end of the gas supply port is located lower than an uppermost dummy wafer supported in the upper dummy wafer support region.

Abstract: There is provided a technique that includes: a process chamber accommodating a substrate support supporting substrates in multiple stages to process the substrates; a supply buffer part adjacent the process chamber; a first gas supply part installed in the supply buffer part; a second gas supply part installed in the supply buffer part; an inner wall installed between the supply buffer part and the process chamber, on which a plurality of slits are formed to correspond to the substrates; and a maintenance port disposed at a lower end of the inner wall, wherein the first gas supply part includes a first gas nozzle having a supply hole that supplies first gas into the supply buffer part.

Abstract: A numerical controller analyzes a machining program, generates movement command data for moving a main spindle relative to a workpiece, causes an interpolation unit to perform interpolation processing based on the generated movement command data, and generates and outputs interpolation data for each interpolation cycle. Further, the interpolation unit performs provisional interpolation processing according to command speed F on a non-rotating coordinate system, converts a start point and an end point of provisional interpolation to positions on a rotating coordinate system to obtain speed F? on the rotating coordinate system, obtains a ratio r of the speed F? to the command speed F, and performs main interpolation processing at speed of F/r.

Abstract: In a numerical controller that controls a machine tool having a plurality of driving axes, coordinate system conversion processing for a machining program is performed in which the machining program is analyzed and then an instruction based on a right-handed coordinate system and an instruction based on a left-handed coordinate system are interchanged.

Abstract: A gas supply system for improving concentration uniformity of a process gas supplied to substrates arrayed in a longitudinal direction includes first and second gas supply tubes that supply process gas from respective upper ends, and configured to supply the process gas for processing substrates to a process chamber that accommodates a plurality of the substrates arrayed in a longitudinal direction, wherein L1 is configured to be longer than L2 and S1 is configured to be smaller than S2, when the length of the first gas supply tube facing a substrate arrangement region where the substrates are arranged is L1, the flow path sectional area of the first gas supply tube is S1, the length of the second gas supply tube facing the substrate arrangement region is L2, and the flow path sectional area of the second gas supply tube is S2.

Abstract: A numerical controller of the present invention includes a command analyzing unit configured to read out and analyze a block from a program and generate moving command data on the basis of the analysis result, an interpolating unit configured to generate interpolation data by performing interpolation processing on the basis of the moving command data, a servo control unit configured to control each axis on the basis of the interpolation data, a path displacement determining unit configured to calculate a distance between a program command path commanded by the program and a tool tip point of the tool after a moving amount of each axis in this control period on the basis of the moving command data, the interpolation data and a current position of each axis and determines whether or not the calculated distance is equal to or greater than an acceptable amount defined in advance, and an alerting unit configured to output an alert in the case where the distance is determined that it is equal to or greater than the

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) forming a first layer by supplying a precursor to the substrate from a first nozzle and (b) forming a second layer by supplying a reactant to the substrate from a second nozzle different from the first nozzle to thereby modify the first layer. The act (a) includes sequentially performing (a-1) supplying an inert gas from the second nozzle at a first flow rate smaller than a flow rate of the precursor in a state in which the precursor is supplied from the first nozzle and (a-2) supplying an inert gas from the second nozzle at a second flow rate larger than the flow rate of the precursor in a state in which the precursor is supplied from the first nozzle.

Abstract: A cleaning method includes: removing deposits adhered to an inside of a processing vessel by forming a film on a substrate in the processing vessel, and thereafter, supplying a cleaning gas into the processing vessel, wherein the removing the deposits includes: a first step of supplying the cleaning gas into the processing vessel at a first flow rate when a temperature of a connection portion connecting an exhaust pipe that exhausts the interior of the processing vessel and the processing vessel is lower than a first temperature; and a second step of supplying the cleaning gas to the processing vessel while gradually decreasing the flow rate of the cleaning gas from the first flow rate to a second flow rate lower than the first flow rate when the temperature of the connection portion reaches a first temperature.