Abstract: An easy-assembly bed includes a top plate, and a leg portion having a plurality of leg members that are linked using notched joints. The top plate is constituted of a bonded material, which includes a plate-shaped foam plate formed with a foam body, and a front board member and a rear board member having an identical shape to the foam plate and that are bonded to the rear surface and the front surface of the foam plate, respectively, and a top plate molded resin portion overing the cut ends of the bonded material with a molded resin; and the leg members are each constituted of a grooved bonded material, which includes a plate-shaped grooved foam plate having locking grooves and formed with a foam body, and a grooved front board member and a grooved rear board member on the front surface and the rear surface of the grooved foam plate.

Abstract: Embodiments of the present disclosure provide a multiple disk pad conditioner and methods of using the multiple disk pad conditioner during a chemical mechanical polishing (CMP) process. The multiple disk pad conditioner has a plurality of conditioning heads having conditioning disks affixed thereto. The multiple disk pad conditioner can include a conditioning arm, and a plurality of conditioning heads attached to the conditioning arm. Each of the plurality of conditioning heads has a conditioning disk affixed thereto. In some embodiments, each of the conditioning heads include a rotational axis, wherein each of the rotational axes is disposed a distance apart in a first direction that extends along the length of the conditioning arm.

Abstract: A hydrodesulfurization catalyst supports one or more metals selected from elements in Group 6 of the Periodic table, one or more metals selected from elements in Group 9 or Group 10 of the same, phosphorus, and an organic acid on a composite oxide support having a specific content of both alumina and HY zeolite having a specific crystallite size. The catalyst includes 10% to 40% by mass of the Group 6 metal, 1% to 15% by mass of the Group 9 or Group 10 metal, and 1.5% to 8% by mass of phosphorus in terms of an oxide based on the catalyst. The catalyst includes 0.8% to 7% by mass of carbon derived from an organic acid and for 1 mole of the Group 9 or Group 10 element metal in terms of an element based on the catalyst, and includes 0.2 to 1.2 moles of the organic acid.

Abstract: A polishing apparatus includes a platen having a first surface to support a polishing pad and a second surface, a carrier head to hold a substrate against the polishing pad, a plurality of through-holes defined in the platen, and a pad pressure control assembly adjacent on a side of the platen opposite the carrier head.

Abstract: A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2.

Abstract: A polishing apparatus includes a platen having a first surface to support a polishing pad and a second surface, a carrier head to hold a substrate against the polishing pad, a plurality of through-holes defined in the platen, and a pad pressure control assembly adjacent on a side of the platen opposite the carrier head.

Abstract: A polishing apparatus includes a platen having a first surface to support a polishing pad and a second surface, a carrier head to hold a substrate against the polishing pad, a plurality of through-holes defined in the platen, and a pad pressure control assembly adjacent on a side of the platen opposite the carrier head.

Abstract: A hydrodesulfurization catalyst supports one or more metals selected from elements in Group 6 of the Periodic table, one or more metals selected from elements in Group 9 or Group 10 of the same, phosphorus, and an organic acid on a composite oxide support having a specific content of both alumina and HY zeolite having a specific crystallite size. The catalyst includes 10% to 40% by mass of the Group 6 metal, 1% to 15% by mass of the Group 9 or Group 10 metal, and 1.5% to 8% by mass of phosphorus in terms of an oxide based on the catalyst. The catalyst includes 0.8% to 7% by mass of carbon derived from an organic acid and for 1 mole of the Group 9 or Group 10 element metal in terms of an element based on the catalyst, and includes 0.2 to 1.2 moles of the organic acid.

Abstract: Comprised are a sliding member for retaining a card and sliding in the forward/backward direction of a housing, and a locking member for sliding in the widthwise direction of the housing and locking the card received within the housing, the locking member comprising a sliding control part for controlling the sliding of the sliding member, the sliding control part preventing the sliding member from sliding when the locking member is in a first position, and allowing the sliding member to slide when the locking member is in a second position.

Abstract: A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2.

Abstract: A connector for a card having a housing for housing a card equipped with a terminal member, a connection terminal attached to the housing for contacting the terminal member of the card and a detecting switch equipped with a first contact member and a second contact member for detecting separation from each other and the insertion of a card into the housing, wherein at least the first contact member or the second contact member is equipped with a fixed portion fixed to the housing and a moving portion displaceable by the housing and unevenly mated with the housing.

Abstract: A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2.

Abstract: There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.

Abstract: A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2.

Abstract: A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.

Abstract: A polishing apparatus includes a platen having a first surface to support a polishing pad and a second surface, a carrier head to hold a substrate against the polishing pad, a plurality of through-holes defined in the platen, and a pad pressure control assembly adjacent on a side of the platen opposite the carrier head.

Abstract: A polishing apparatus includes a platen having a first surface to support a polishing pad and a second surface, a carrier head to hold a substrate against the polishing pad, a plurality of through-holes defined in the platen, and a pad pressure control assembly adjacent on a side of the platen opposite the carrier head.

Abstract: A hearing aid (100) comprises a body case (2) that is worn behind an ear (1), a sound conductor (3) that is linked at one end to the body case (2) and is linked at the other end to an earpiece (6), and an engaging component (8) for holding the earpiece linked to the other end of the sound conductor in the external auditory canal (7) of the ear (1). The engaging component (8) is made up of a first arc part (8a) disposed on the earpiece (6) side, a second arc part (8b) that is larger than the first arc part (8a) and is disposed opposite the first arc part (8a), a first linking part (8c) that links one end of the first arc part (8a) and one end of the second arc part (8b), and a second linking part (8d) that links the other end of the first arc part (8a) and the other end of the second arc part (8b). The second linking part (8d) has a shape such that its center part protrudes toward the first linking part (8c). This constitution allows the hearing aid (100) to be put on more easily.

Abstract: In one aspect, a scrubber brush assembly is provided. The scrubber brush assembly includes (1) a cylindrical brush including exterior and interior surfaces; and (2) a sleeve having an exterior surface coupled to the interior surface of the scrubber brush and an interior surface. The exterior surface of the sleeve includes first coupling features adapted to prevent rotation of the sleeve relative to the brush. The scrubber brush assembly also includes a mandrel coupled to the interior surface of the sleeve. Numerous other aspects are provided.

Abstract: A connector for a card having a housing for housing a card equipped with a terminal member, a connection terminal attached to the housing for contacting the terminal member of the card and a detecting switch equipped with a first contact member and a second contact member for detecting separation from each other and the insertion of a card into the housing, wherein at least the first contact member or the second contact member is equipped with a fixed portion fixed to the housing and a moving portion displaceable by the housing and unevenly mated with the housing.