Abstract: A hearing aid (100) comprises a body case (2) that is worn behind an ear (1), a sound conductor (3) that is linked at one end to the body case (2) and is linked at the other end to an earpiece (6), and an engaging component (8) for holding the earpiece linked to the other end of the sound conductor in the external auditory canal (7) of the ear (1). The engaging component (8) is made up of a first arc part (8a) disposed on the earpiece (6) side, a second arc part (8b) that is larger than the first arc part (8a) and is disposed opposite the first arc part (8a), a first linking part (8c) that links one end of the first arc part (8a) and one end of the second arc part (8b), and a second linking part (8d) that links the other end of the first arc part (8a) and the other end of the second arc part (8b). The second linking part (8d) has a shape such that its center part protrudes toward the first linking part (8c). This constitution allows the hearing aid (100) to be put on more easily.

Abstract: An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.

Abstract: An object of the present invention is to provide a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, with which sulfur compounds in the hydrocarbon oil can be desulfurized to a high degree and which simultaneously is extremely effective in reducing the wax deposit content; a process for producing the catalyst; and a method of hydrotreatment with the catalyst. The invention relates to a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, comprising a support comprising an inorganic oxide containing at least one crystalline aluminosilicate having a one- or two-dimensional pore path system and, having provided thereon, 10 to 35% by mass of a metal in Group 6 of the Periodic Table, 1 to 10% by mass of a metal in Group 8 of the Periodic Table, and 1.

Abstract: This invention provides a method for preventing or inhibiting infection with a plant-infecting microorganism and imparting resistivity to plants, a method for preparing plants having resistance to diseases caused by microorganisms such as plant pathogenic filamentous fungi, and a microbial pesticide formulation. The method for preventing or inhibiting infection of a host plant with plant-infecting microorganisms comprises degrading ?-1,3-glucan on cell walls of the microorganisms by ?-1,3-glucanase.

Abstract: An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.

Abstract: There is provided a catalyst for hydrotreating a hydrocarbon oil, which comprises an inorganic oxide support containing a certain amount of phosphorus oxide having provided thereon: at least one selected from metals in the Group 6 of the periodic table, at least one selected from metals in the Group 8 of the periodic table, and carbon, and which has a certain specific surface area, pore volume, and mean pore diameter, a process for producing the same, and a method for hydrotreating a hydrocarbon oil using the same. Thereby, the catalyst can be produced in a simple and convenient manner and sulfur compounds in the hydrocarbon oil can be exceedingly highly desulfurized and simultaneously nitrogen compounds can be diminished without necessitating severe operating conditions.

Abstract: A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.

Abstract: An object of the present invention is to provide a hydrotreating catalyst capable of being produced by a simple method and capable of realizing ultra-deep desulfurization of sulfur components in gas oil without requiring severer operating conditions as well as capable of reducing nitrogen components simultaneously, to provide a process for producing the catalyst, and to provide a process for desulfurizing gas oil using the catalyst. The invention relates to a catalyst containing on an inorganic oxide support 10 to 40% by weight of a metal in the Group 6 of the periodic table, 1 to 15% by weight of a metal in the Group 8 of the periodic table, 1.5 to 8% by weight of phosphorus, each in terms of an oxide amount based on the catalyst, and 2 to 14% by weight of carbon in terms of an element amount based on the catalyst, wherein the catalyst has a specific surface area of 150 to 300 m2/g, a pore volume of 0.3 to 0.

Abstract: There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.

Abstract: A method for manufacturing a liquid crystal display which employs an active matrix substrate including a plurality of pixels arranged in matrix on a substrate and reflecting electrodes formed in the pixels, respectively. The method comprises (a) a laminated conductive film formation step of sequentially forming a conductive metal film and an amorphous transparent conductive film on a substrate to form a laminated conductive film and (b) a reflecting electrode formation step of patterning the laminated conductive film into a reflecting electrode, wherein the step (b) includes a first etching step of etching the conductive metal film and the amorphous transparent conductive film simultaneously and a second etching step of etching the amorphous transparent conductive film only.

Abstract: An object of the present invention is to provide a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, with which sulfur compounds in the hydrocarbon oil can be desulfurized to a high degree and which simultaneously is extremely effective in reducing the wax deposit content; a process for producing the catalyst; and a method of hydrotreatment with the catalyst. The invention relates to a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, comprising a support comprising an inorganic oxide containing at least one crystalline aluminosilicate having a one- or two-dimensional pore path system and, having provided thereon, 10 to 35% by mass of a metal in Group 6 of the Periodic Table, 1 to 10% by mass of a metal in Group 8 of the Periodic Table, and 1.

Abstract: In a susceptor (10) having a wafer pocket (101) for receiving a wafer W at the time of vapor-phase growth, the wafer pocket has at least a first pocket portion (102) for loading an outer circumferential portion of the wafer and a second pocket portion (103) formed to be lower than the first pocket and having a smaller diameter than that of the first pocket portion, and a fluid passage (105) having one end (105a) opening on a vertical wall (103a) of said second pocket portion and the other end (105b) opening on a back surface (104) or a side surface (106) of the susceptor is formed.

Abstract: A catalyst for hydrotreating gas oil, which comprises an inorganic oxide support having provided thereon: at least one selected from metals in the Group 6 of the periodic table at from 10 to 30% by weight, at least one selected from metals in the Group 8 of the periodic table at from 1 to 15% by weight, phosphorus at from 1.5 to 6% by weight, and carbon at from 2 to 14% by weight, each in terms of a respective oxide amount based on the catalyst, wherein the catalyst has a specific surface area of from 220 to 300 m2/g, a pore volume of from 0.35 to 0.6 ml/g, and an average pore diameter of about from 65 to 95 ?; a process for producing the catalyst; and a method for hydrotreating gas oil, which comprises subjecting a gas oil fraction to a catalytic reaction in the presence of the catalyst under conditions at a hydrogen partial pressure of from 3 to 8 MPa, a temperature of from 300 to 420° C., and a liquid hourly space velocity of from 0.3 to 5 hr?1.

Abstract: There is provided a catalyst for hydrotreating a hydrocarbon oil, which comprises an inorganic oxide support containing a certain amount of phosphorus oxide having provided thereon: at least one selected from metals in the Group 6 of the periodic table, at least one selected from metals in the Group 8 of the periodic table, and carbon, and which has a certain specific surface area, pore volume, and mean pore diameter, a process for producing the same, and a method for hydrotreating a hydrocarbon oil using the same. Thereby, the catalyst can be produced in a simple and convenient manner and sulfur compounds in the hydrocarbon oil can be exceedingly highly desulfurized and simultaneously nitrogen compounds can be diminished without necessitating severe operating conditions.

Abstract: In one aspect, a scrubber brush assembly is provided. The scrubber brush assembly includes (1) a cylindrical brush including exterior and interior surfaces; and (2) a sleeve having an exterior surface coupled to the interior surface of the scrubber brush and an interior surface. The exterior surface of the sleeve includes first coupling features adapted to prevent rotation of the sleeve relative to the brush. The scrubber brush assembly also includes a mandrel coupled to the interior surface of the sleeve. Numerous other aspects are provided.

Abstract: An object of the present invention is to provide a hydrotreating catalyst capable of being produced by a simple method and capable of realizing ultra-deep desulfurization of sulfur components in gas oil without requiring severer operating conditions as well as capable of reducing nitrogen components simultaneously, to provide a process for producing the catalyst, and to provide a process for desulfurizing gas oil using the catalyst. The invention relates to a catalyst containing on an inorganic oxide support 10 to 40% by weight of a metal in the Group 6 of the periodic table, 1 to 15% by weight of a metal in the Group 8 of the periodic table, 1.5 to 8% by weight of phosphorus, each in terms of an oxide amount based on the catalyst, and 2 to 14% by weight of carbon in terms of an element amount based on the catalyst, wherein the catalyst has a specific surface area of 150 to 300 m2/g, a pore volume of 0.3 to 0.

Abstract: A method for manufacturing a liquid crystal display which employs an active matrix substrate including a plurality of pixels arranged in matrix on a substrate and reflecting electrodes formed in the pixels, respectively. The method comprises (a) a laminated conductive film formation step of sequentially forming a conductive metal film and an amorphous transparent conductive film on a substrate to form a laminated conductive film and (b) a reflecting electrode formation step of patterning the laminated conductive film into a reflecting electrode, wherein the step (b) includes a first etching step of etching the conductive metal film and the amorphous transparent conductive film simultaneously and a second etching step of etching the amorphous transparent conductive film only.

Abstract: A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.