Abstract: A TEG (Test Element Group) block 1 includes a TFT (Thin Film Transistor) test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. A TEG block 2 includes a resistance test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. In these TEG blocks, the test terminals are arranged with the same pattern. Each of the test elements in each TEG block is connected to at least one of a plurality of test terminals included in that TEG block. The test elements can be efficiently formed on the substrate in view of the space on a display device substrate or the preference of characteristics to be evaluated. Moreover, characteristics of each test element can be conducted with a common probe regardless of the type of display device.

Abstract: A catalyst for hydrotreating gas oil, which comprises an inorganic oxide support having provided thereon: at least one selected from metals in the Group 6 of the periodic table at from 10 to 30% by weight, at least one selected from metals in the Group 8 of the periodic table at from 1 to 15% by weight, phosphorus at from 1.5 to 6% by weight, and carbon at from 2 to 14% by weight, each in terms of a respective oxide amount based on the catalyst, wherein the catalyst has a specific surface area of from 220 to 300 m2/g, a pore volume of from 0.35 to 0.6 ml/g, and an average pore diameter of about from 65 to 95 Å; a process for producing the catalyst; and a method for hydrotreating gas oil, which comprises subjecting a gas oil fraction to a catalytic reaction in the presence of the catalyst under conditions at a hydrogen partial pressure of from 3 to 8 MPa, a temperature of from 300 to 420° C., and a liquid hourly space velocity of from 0.3 to 5 hr−1.

Abstract: A method for producing an electrode substrate, having an organic insulating region formed of an organic insulating material and an inorganic insulating region formed of an inorganic insulating material on an identical side thereof, includes the steps of performing a plasma treatment of the organic insulating region; forming a first transparent conductive layer in contact with the organic insulating region and a second transparent conductive layer in contact with the inorganic insulating region; and etching the first transparent conductive layer and the second transparent conductive layer in the same step.

Abstract: The method of the present invention of manufacturing a nozzle plate for an ink jet recording head comprises a first step of forming a layer of a resin comprising a benzene ring on a metal substrate, a second step of patterning the layer of the resin by means of excimer laser and partially exposing the metal substrate, a third step of forming a metal layer having a thickness smaller than that of the resin layer on the exposed surface of the metal substrate by electroforming, and a fourth step of separating the metal layer from the metal substrate and the resin layer.

Abstract: A TEG (Test Element Group) block 1 includes a TFT (Thin Film Transistor) test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. A TEG block 2 includes a resistance test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. In these TEG blocks, the test terminals are arranged with the same pattern. Each of the test elements in each TEG block is connected to at least one of a plurality of test terminals included in that TEG block.

Abstract: A method for manufacturing an ink jet recording head, which is provided with orifices for liquid discharge use, nozzles communicated with the orifices, electrothermal converting members arranged in the nozzles to form bubbles in the liquid by providing thermal energy for it, the liquid chamber communicated with the nozzles to supply liquid to the nozzles and a substrate having the electrothermal converting members provided therefor, comprises the steps of preparing the substrate to be a silicon substrate having (100) plane or (110) plane crystal axes therefor, forming organic resin layer at least in the liquid chamber on the silicon substrate, then, removing by means of anisotropic etching a part of the liquid chamber formation portion of the substrate from the reverse side of the formation surface of the organic resin layer and forming an elastic member portion formed by the membrane of the organic resin layer in the liquid chamber.

Abstract: A method for producing an electrode substrate, having an organic insulating region formed of an organic insulating material and an inorganic insulating region formed of an inorganic insulating material on an identical side thereof, includes the steps of performing a plasma treatment of the organic insulating region; forming a first transparent conductive layer in contact with the organic insulating region and a second transparent conductive layer in contact with the inorganic insulating region; and etching the first transparent conductive layer and the second transparent conductive layer in the same step.

Abstract: The present invention has as an objective providing a silicon epi-wafer, and a manufacturing method therefor, which simplifies processing as much as possible in an attempt to lower the cost of an epi-wafer, and which is capable of manifesting a sufficient IG effect even in low-temperature device fabrication processing of under 1080° C. in an epi-wafer, and furthermore, in device processing, which enhances gettering capabilities for a variety of impurities in wafer device processing, without performing, following wafer slicing, any process from which an EG effect can be anticipated. As for the silicon single crystal, which is grown via the CZ method so as to make the oxygen concentration relatively high, and to intentionally make the carbon concentration high, outstanding gettering capabilities are manifested in the wafer itself, without performing EG processing.

Abstract: The objective of this invention is to provide a manufacturing method wherewith optimally low-COP substrates can be efficiently manufactured for epitaxial wafers in order to obtain high epitaxial surface quality that will not have an adverse effect on device characteristics. A phenomenon was discovered whereby COPs are eliminated by solution annealing or flattening when epitaxial films are formed on wafers wherein the density of grown-in defects (COPs) with a size of 0.130 &mgr;m or larger is 0.03 defects/cm2 or lower, the use of which phenomenon is characteristic of the invention.

Abstract: An active-matrix substrate includes: two kinds of lines arranged in a matrix on an insulating plate; switching elements each provided in the vicinity of an intersection of the two kinds of lines; an insulating film for flattening, covering an entire surface of the insulating plate so as to flatten the uneven surface of the insulating plate due to the presence of the lines and the switching elements; and pixel electrodes provided in a matrix on the insulating film for flattening. A concave portion for preventing a short-circuit from occurring between the pixel electrodes during a production process is formed in a region of the insulating film for flattening which corresponds to a gap between pixel electrodes which are adjacent to each other.

Abstract: A process for producing a hydrodesulfurization catalyst is disclosed, comprising impregnating an inorganic oxide carrier containing a crystalline aluminosilicate with a solution consisting of Group VI metal oxide, a Group VIII metal oxide, and phosphorus. Also disclosed is a process for deep hydrodesulfurization of a gas oil fraction using said catalyst to obtain gas oil having an extremely low sulfur content.

Abstract: An active matrix substrate includes an insulative plate; a plurality of switching elements arranged in a matrix on the insulative plate; a plurality of gate signal lines for controlling the switching elements; a plurality of source signal lines for providing data signals to the switching elements, the source signal lines being perpendicular to the gate signal lines; and a plurality of pixel electrodes respectively provided above and in electric connection with drain electrodes of the switching elements. At least one of the source signal lines and the drain electrodes include at least a transparent conductive layer, a first metal layer and a second metal layer.

Abstract: The active matrix liquid crystal panel of this invention includes: a plurality of scanning lines and a plurality of signal lines arranged to cross each other; a plurality of pixel electrodes arranged in respective regions defined by the plurality of scanning lines and the plurality of signal lines; and a plurality of switching elements for driving the plurality of pixel electrodes, wherein each of the plurality of pixel electrodes overlaps at least one of the adjacent scanning lines and signal lines among the plurality of scanning lines and signal lines via an insulating film, and at least one of the plurality of pixel electrodes is electrically connected with the overlapped line.

Abstract: A liquid crystal display device comprises a gate signal wiring formed on a substrate, a data signal wiring insulated from the gate signal wiring and formed to perpendicularly cross the gate signal wiring, a switching element provided near the perpendicularly crossing portion of the gate signal wiring and the date signal wiring and having a gate electrode and source/drain electrodes, an interlayer insulating film, and a pixel electrode disposed in the region surrounded by the gate signal wiring and the data signal wiring and on the interlayer insulating film, wherein the gate signal wiring is connected with the gate electrode, the data signal wiring is connected with one of the source/drain electrodes, the pixel electrode is connected with the other of the source/drain electrodes through a contact hole penetrating through an interlayer insulating film and via a connecting electrode, and, the width of the contact hole at the aperture surface of the contact hole is reduced by setting the height from the surface

Abstract: A method for manufacturing an ink jet printing head comprises a step of joining together a base board having ink discharge pressure generating elements, which also forms the bottom of a plurality of ink paths, and a ceiling plate that forms the ceiling portion of the plurality of ink paths in order to provide an ink jet printing head. In this method, either one of the joining portions between the base board and ceiling plate is Si and the other one of them is metal, and after each of the joining portions is irradiated by an energy particle, the base board and the ceiling plate are made in contact and cold joined by the application of cold activation. With the method of manufacture thus provided, it is possible to make the intensity of joint between the ceiling plate and base board firmer so as to eliminate any gaps between them, hence preventing the creation of cross talk phenomenon, and the degradation of quality of printed images as well.

Abstract: A head for an ink jet recording apparatus including: an electro-thermal transducer for generating thermal energy for use to discharge ink; and a circuit portion electrically connected to the electro-thermal transducer, wherein the circuit portion has a first conductive layer, an insulating layer disposed on the first conductive layer, and a second conductive layer disposed on the insulating layer, and an opening portion of the insulating layer is filled with a conductor formed by a selective deposition method so that the first conductive layer and the second conductive layer are connected to each other.

Abstract: The present invention discloses a recording head and a method of manufacturing the recording head including an electrothermal transducer element for causing ink to be discharged through a discharge port by causing heat energy to act on the ink, a heat acting portion for causing the heat energy generated by the electrothermal transducer element to act on the ink present in an ink passage; and a substrate, either side of which has the electrothermal transducer element, and a residual side of which has the ink passage, so that the reliability is improved, an image is precisely recorded at high speed and an excellent manufacturing yield is realized.

Abstract: A head for an ink jet recording apparatus including: an electro-thermal transducer for generating thermal energy for use to discharge ink; and a circuit portion electrically connected to the electro-thermal transducer, wherein the circuit portion has a first conductive layer, an insulating layer disposed on the first conductive layer, and a second conductive layer disposed on the insulating layer, and an opening portion of the insulating layer is filled with a conductor formed by a selective deposition method so that the first conductive layer and the second conductive layer are connected to each other.

Abstract: A process is described for producing a catalyst composition for hydrodesulfurization of hydrocarbon oil, which comprises:drying and calcining a carrier comprising alumina or an alumina-containing material impregnated with a solution mixture of(A) at least one of an alkoxide, a chelate compound, or a glycoxide of molybdenum or chromium;(B) at least one of an alkoxide, a chelate compound, or a glycoxide of cobalt or nickel; andan organic solvent capable of dissolving (A) and (B).Also described is a process for hydrodesulfurizing hydrocarbon oil using the same catalyst composition.

Abstract: A catalyst composition for the hydrodesulfurization of a hydrocarbon oil, comprising a composite of metal oxides comprising:aluminum; andat least one metal selected from a group consisting of(A) at least one metal belonging to Group VIB of the Periodic Table; and(B) at least one the metal belonging to Group VIII of the Periodic Table;where the at least one metal belonging to Group VIB of the Periodic Table accounts for, in terms of as oxide, from 10 to 60% by weight with respect to the total catalyst, and the at least one metal belonging to Group VIII of the Periodic Table accounts for, in terms of oxide, from 3 to 20% by weight with respect to the total catalyst, and wherein no peak assigned to Y-Al.sub.2 O.sub.3 is present in X-ray diffraction.