Abstract: Provided are a positive electrode terminal and a negative electrode terminal being terminals of a capacitor element; a positive electrode conductor plate connected to the positive electrode terminal; a negative electrode conductor plate connected to the negative electrode terminal; and a power conversion module connected to the two conductor plates. The positive electrode terminal and the negative electrode terminal are formed along an arrangement direction of the capacitor element. The positive electrode conductor plate and the negative electrode conductor plate form a laminated conductor portion in which the positive electrode conductor plate and the negative electrode conductor plate have respective main surfaces disposed, to face the main surface of the capacitor element, and are laminated to each other.

Abstract: No consideration is given to heat transferred from a semiconductor module to a capacitor via a bus bar module. The heat generated by a semiconductor module (1) is transferred to a bus bar module (3) via a DC terminal (1A) of the semiconductor module (1). As illustrated in FIG. 4(B), the heat transferred to the bus bar module 3 is then transferred to the pressing member 5 via the annular conductor 8 and the bolt 5A. Since the pressing member 5 is in close contact with the second cooler 2B, the heat transferred to the pressing member 5 is cooled by the second cooler 2B. On the other hand, the heat transferred to the convex portion 6A of the housing 6 is transferred to the first cooler 2A via the housing 6 and cooled. As a result, in the configuration in which a capacitor (4) is connected to the semiconductor module (1) via the bus bar module (3), the heat transferred from the semiconductor module (1) to the capacitor (4) can be suppressed.

Abstract: An ultraviolet optical system includes an objective lens group that captures ultraviolet light for each angle from an ultraviolet light source and forms an intermediate image, and an imaging lens group that re-images the intermediate image. Neither the objective lens group nor the imaging lens group has a cemented surface, and all lenses included in the objective lens group and in the imaging lens group are single lenses that transmit ultraviolet light having a wavelength of 300 nm or shorter. A light distribution measuring apparatus includes the ultraviolet optical system and a sensor, and outputs light distribution of the ultraviolet light source by using a signal obtained by the sensor. The ultraviolet optical system is positioned such that the intermediate image is re-imaged on a light receiving sensor surface, and the sensor has light receiving sensitivity to ultraviolet light having a wavelength of 300 nm or shorter.

Abstract: A power semiconductor device includes a first submodule including a first power semiconductor element, a second submodule including a second power semiconductor element, a positive electrode side conductor portion and a negative electrode side conductor portion, an intermediate substrate that forms a negative electrode side facing portion facing the negative electrode side conductor portion with the first submodule sandwiched between them and a positive electrode side facing portion facing the positive electrode side conductor portion with the second submodule sandwiched between them, and a plurality of signal terminals that transmit a signal for controlling the first power semiconductor element or the second power semiconductor element.

Abstract: A power semiconductor apparatus includes a power semiconductor element having low and high potential side electrodes and a sense electrode, high and low potential side conductors electrically connected with the high potential side electrodes, respectively, a sense wiring electrically connected with the sense electrode, and a first metal portion facing the low potential side conductor or the low potential side conductor across the sense wiring. When viewed from an array direction of the sense wiring and the first metal portion, the sense wiring has a facing portion facing the high or low potential side conductor, the first metal portion forms a recess in a part overlapping the facing portion, and a depth of the recess is formed such that a distance between a bottom of the recess and the sense wiring is larger than a distance between the sense wiring and the high or low potential side conductor.

Abstract: An object of the present invention is to provide an inverter integrated motor that can effectively cool a power module of an inverter portion. An inverter portion 120 is connected to a motor portion and includes a power module 121 that converts a DC power into an AC power, a first flow path forming body 221a that is provided between a motor and the power module 121 and forms a first flow path 221, and a second flow path forming body 222a that is disposed on a side opposite a side of the first flow path forming body 221a (side of the motor 110) over the power module 121 and forms a second flow path 222. The first flow path forming body 221a and second flow path forming body 222a are formed so that a flow rate of a refrigerant F1 flowing in the first flow path forming body 221a is greater than a flow rate of a refrigerant F2 flowing in the second flow path forming body 222a.

Abstract: A power module includes a power semiconductor element converting DC power into AC power and outputting the AC power to a motor; a conductor electrically connected to the power semiconductor element; a substrate having a substrate wiring connected to the conductor on a surface; and a resin sealing material sealing the power semiconductor element, the conductor, and the substrate, in which the substrate has, at a position in contact with an end portion of the resin sealing material, a concave portion formed by a surface of the substrate wiring becoming concave in a continuously curved surface shape.

Abstract: An object of the present invention is to provide an inverter integrated motor that achieves both improvement in cooling performance of a current sensor and downsizing of an entire device. An inverter integrated motor includes: a power module that converts a direct current into an alternating current; a flow path forming body that is formed so as to flow and cover a refrigerant in the power module; an inverter that installs the power module and the flow path forming body inside; a current sensor that detects the alternating current; and a motor that houses a stator and a rotor, wherein the power module is disposed at a position facing a rotation shaft of the motor via the stator and the rotor, and the current sensor 13 is disposed between the flow path forming body and a coil end of the stator when viewed from a direction perpendicular to the rotation shaft, and at least a part of the current sensor is housed in a motor housing.

Abstract: A power conversion device can be miniaturized. A power conversion device includes a power module that performs switching operation, a smoothing capacitor that smooths a voltage ripple caused by the switching operation, a circuit board that controls driving of the power module, a housing that accommodates the power module and the smoothing capacitor, a first fixing member for fixing the power module to the housing, and a second fixing member for fixing the smoothing capacitor to the housing. The circuit board straddles between the power module and the smoothing capacitor, and is fixed by the first fixing member and the second fixing member.

Abstract: No consideration is given to heat transferred from a semiconductor module to a capacitor via a bus bar module. The heat generated by a semiconductor module (1) is transferred to a bus bar module (3) via a DC terminal (1A) of the semiconductor module (1). As illustrated in FIG. 4(B), the heat transferred to the bus bar module 3 is then transferred to the pressing member 5 via the annular conductor 8 and the bolt 5A. Since the pressing member 5 is in close contact with the second cooler 2B, the heat transferred to the pressing member 5 is cooled by the second cooler 2B. On the other hand, the heat transferred to the convex portion 6A of the housing 6 is transferred to the first cooler 2A via the housing 6 and cooled. As a result, in the configuration in which a capacitor (4) is connected to the semiconductor module (1) via the bus bar module (3), the heat transferred from the semiconductor module (1) to the capacitor (4) can be suppressed.

Abstract: Detection accuracy of a collector sense in detecting a voltage is improved. A power module 300 has a first conductor 410 and a second conductor 411 to which a plurality of active elements 317 and 315 configuring upper and lower arm circuits are connected. In addition, the power module 300 has an AC side terminal 320B protruding from one side 301a, a positive electrode side terminal 315B and a negative electrode side terminal 319B which protrude from the other side 301b, an intermediate electrode portion 414 that connects the first conductor 410 and the second conductor 411 to each other, and a collector sense wiring 452a in which a collector electrode of an active element 157 and the first conductor 410 are connected to each other via a sense connection portion 415.

Abstract: A power semiconductor device includes a first submodule including a first power semiconductor element, a second submodule including a second power semiconductor element, a positive electrode side conductor portion and a negative electrode side conductor portion, an intermediate substrate that forms a negative electrode side facing portion facing the negative electrode side conductor portion with the first submodule sandwiched between them and a positive electrode side facing portion facing the positive electrode side conductor portion with the second submodule sandwiched between them, and a plurality of signal terminals that transmit a signal for controlling the first power semiconductor element or the second power semiconductor element.

Abstract: An object of the present invention is to improve assemblability of a power semiconductor device. A power semiconductor device includes a plurality of submodules that includes a semiconductor element interposed between a source conductor and a drain conductor, a sense wiring that transmits a sense signal of the semiconductor element, and an insulating portion at which the sense wiring and the sense conductor are arranged, and a source outer conductor that is formed to surround the source conductor and is joined to the source conductor in each of the plurality of submodules. Each source conductor included in the plurality of submodules includes protrusion portions that are formed toward the sensor wiring from the source conductor, are connected to the sense wiring, and define a distance between the sense wiring and the source outer conductor.

Abstract: A power semiconductor device includes a circuit body, first and second insulations, first and second bases, a case, and a distance regulation portion. The circuit body incudes a semiconductor element and a conductive portion. The first insulation and the second insulation oppose each other. The first base and second base also oppose each other. The case has a first opening portion covered with the first base and a second opening portion covered with the second base. The distance regulation portion has a first end that contacts the first base and a second end, that is opposite to the first end, and that contacts the second base. The distance regulation portion regulates a distance between the first base and the second base.

Abstract: A power conversion device includes first and second power semiconductor elements, and a circuit for transferring a drive signal of the first and second power semiconductor elements. The circuit board includes a first emitter wire which is formed along an arranging direction of the first power semiconductor element and the second power semiconductor element, a first gate wire which is disposed between the first power semiconductor element and the first emitter wire, a second gate wire which is disposed between the second power semiconductor element and the emitter wire, a third gate wire which is disposed to face the first gate wire and the second gate wire with the emitter wire interposed between the third gate wire and the first gate wire and the second gate wire, and a first gate resistor which connects the first gate wire and the third gate wire over the first emitter wire.

Abstract: A power semiconductor apparatus includes a power semiconductor element having low and high potential side electrodes and a sense electrode, high and low potential side conductors electrically connected with the high potential side electrodes, respectively, a sense wiring electrically connected with the sense electrode, and a first metal portion facing the low potential side conductor or the low potential side conductor across the sense wiring. When viewed from an array direction of the sense wiring and the first metal portion, the sense wiring has a facing portion facing the high or low potential side conductor, the first metal portion forms a recess in a part overlapping the facing portion, and a depth of the recess is formed such that a distance between a bottom of the recess and the sense wiring is larger than a distance between the sense wiring and the high or low potential side conductor.

Abstract: Detection accuracy of a collector sense in detecting a voltage is improved. A power module 300 has a first conductor 410 and a second conductor 411 to which a plurality of active elements 317 and 315 configuring upper and lower arm circuits are connected. In addition, the power module 300 has an AC side terminal 320B protruding from one side 301a, a positive electrode side terminal 315B and a negative electrode side terminal 319B which protrude from the other side 301b, an intermediate electrode portion 414 that connects the first conductor 410 and the second conductor 411 to each other, and a collector sense wiring 452a in which a collector electrode of an active element 157 and the first conductor 410 are connected to each other via a sense connection portion 415.

Abstract: To improve yield and reliability at the time when a plurality of semiconductor elements used for a semiconductor device is arranged in parallel.

Abstract: An object of the present invention is to improve assemblability of a power semiconductor device. A power semiconductor device includes a plurality of submodules that includes a semiconductor element interposed between a source conductor and a drain conductor, a sense wiring that transmits a sense signal of the semiconductor element, and an insulating portion at which the sense wiring and the sense conductor are arranged, and a source outer conductor that is formed to surround the source conductor and is joined to the source conductor in each of the plurality of submodules. Each source conductor included in the plurality of submodules includes protrusion portions that are formed toward the sensor wiring from the source conductor, are connected to the sense wiring, and define a distance between the sense wiring and the source outer conductor.

Abstract: The present invention aims to reduce the leakage current that flows when measuring a high voltage and includes: a voltage detector that detects a voltage and outputs a detection voltage; a current supplier that supplies a measurement current across a pair of input terminals via a protective resistor; and a processor that executes a voltage measurement process, which measures the voltage based on data indicating the detection voltage, and a resistance measurement process, which measures a resistance connected between the input terminals based on the voltage and the current. A first switch is connected in parallel to the protective resistor and the processor executes the voltage measurement process in a state where the first switch has been set open to measure the terminal voltage, and executes the resistance measurement process by setting the first switch shorted when the voltage is equal to or below the reference voltage value.