Abstract: In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n? type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n? type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n? type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.

Abstract: According to one embodiment, when a controller writes update data in a second memory to a first memory which is nonvolatile and a difference between a size of a page and a size of the update data is equal to or greater than a size of a cluster, the controller configured to generate write data by adding, to the update data, data which has the size of the cluster, store an update content of management information corresponding to the update data and an update content storage position indicating a storage position of the update content of the management information in the first memory, and write the generated write data to a block in writing of the first memory.

Abstract: A memory system in embodiments includes a nonvolatile semiconductor memory that stores user data, a forward lookup address translation table and a reverse lookup address translation table, and a controller. The controller is configured to determine that the user data stored in the nonvolatile semiconductor memory is valid or invalid based on these two tables. The controller may perform data organizing of selecting data determined valid and rewriting the data in a new block. The controller may perform write processing and rewriting processing to the new block alternately at a predetermined ratio. The controller may determine whether a predetermined condition is satisfied on a basis of addresses included in write requests and write data in the MLC mode when the condition is satisfied and write data in the SLC mode when the condition is not satisfied.

Abstract: A management information generating method wherein logical and physical block addresses (BAs) of continuous addresses are associated with each other in the BA translation table. When a logical block is constructed, an allowable value is set for the number of defective physical blocks. A logical block having fewer defects than the set number is set usable, and a logical block having more defects than the set number is set unusable. System logical block construction is performed to preferentially select physical blocks from a plane list including a large number of usable blocks to equalize the number of usable blocks in each plane list. It is determined whether the number of free blocks is insufficient on the basis of a first management unit and whether the storage area for the indicated capacity can be reserved on the basis of the management unit different from the first unit.

Abstract: The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

Abstract: The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

Abstract: According to one embodiment, a memory system includes a data manager and a data restorer. The data manager multiplexes difference logs by a parallel writing operation and stores them in a second storage area, the difference logs being difference logs indicating difference information before and after update of a management table; and thereafter multiplexes predetermined data as finalizing logs and stores them in the second storage area. The data restorer determines a system status at startup of the memory system, by judging whether irregular power-off occurs or data destruction occurs in the second storage area, based on a data storage state of the difference logs and the finalizing logs stored in the second storage area.

Abstract: In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.

Abstract: A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.

Abstract: A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit.

Abstract: A joined product according to the present invention is a joined product including a cemented carbide sintered compact serving as a first material to be joined and a cBN sintered compact or a diamond sintered compact serving as a second material to be joined. The first material to be joined and the second material to be joined are joined by a joining material that forms a liquid phase at a temperature exceeding 800° C. and lower than 1000° C. and that is placed between the first material to be joined and the second material to be joined. The first material to be joined and the second material to be joined are joined by resistance heating and pressing at a pressure of 0.1 to 200 MPa.

Abstract: A DC-DC converter in which self turn-on can be prevented and can improve power efficiency. In a non-insulated DC-DC converter, self turn-on is prevented by applying a negative voltage between a gate and a source of a low side MOSFET by the use of a capacitor for generating negative voltage when the low side MOSFET is in an OFF state. Also, when the low side MOSFET is in an ON state due to the capacitor for generating negative voltage, a positive voltage applied between the gate and the source of the low side MOSFET does not drop from a voltage of a gate driving DC power source that is supplied from a gate power input terminal. Therefore, the power efficiency is improved.

Abstract: A manufacturing method of a semiconductor device includes forming an oxide semiconductor thin film layer of zinc oxide, wherein at least a portion of the oxide semiconductor thin film layer in an as-deposited state includes lattice planes having a preferred orientation along a direction perpendicular to the substrate and a lattice spacing d002 of at least 2.619 ?.

Abstract: A manufacturing method of a thin film transistor includes forming a pair of source/drain electrodes on a substrate, such that the source/drain electrodes define a gap therebetween; forming low resistance conductive thin films, which define a gap therebetween, on the source/drain electrodes; and forming an oxide semiconductor thin film layer on upper surface of the low resistance conductive thin films and in the gap defined between the low resistance conductive thin films so that the oxide semiconductor thin film layer functions as a channel. The low resistance conductive thin films and the oxide semiconductor thin film layer are etched so that side surfaces of the resistance conductive thin films and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of the channel. A gate electrode is mounted over the oxide semiconductor thin film layer.

Abstract: A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.

Abstract: The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.

Abstract: In a lateral-type power MOSFET, high breakdown voltage is achieved with suppressing to increase a cell pitch, and a feedback capacity and an ON resistance are decreased. An n? type silicon region having a high resistance to be a region of maintaining a breakdown voltage is vertically provided with respect to a main surface of an n+ type silicon substrate, and the n? type silicon region having the high resistance is connected to the n+ type silicon substrate. Also, a conductive substance is filled through an insulating substance inside a trench formed to reach the n+ type silicon substrate from the main surface of the n+ type silicon substrate so as to contact with the n? type silicon region having the high resistance, and the conductive substance is electrically connected to a source electrode.

Abstract: The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

Abstract: A drive circuit for driving a semiconductor element is equipped with: a first switch connected to a positive side of a DC power supply; a second switch connected to the other terminal of the first switch and to a negative side of the DC power supply; a third switch connected to the positive side of the DC power supply; a fourth switch connected to the other terminal of the third switch; a fifth switch connected to the other terminal of the fourth switch and to the negative side of the DC power supply; and a capacitor connected to the other terminal of the first switch and to the other terminal of the fourth switch. A gate of the semiconductor element is connected to the other terminal of said third switch; and a source of the semiconductor element is connected to the negative side of the DC power supply.

Abstract: An LED driving circuit driving an LED array includes: n constant-current driving elements having a vertical structure, each of which is connected to each of LED strings in series and drives the LED string with a constant current; n constant-current control circuits controlling on voltages of the constant-current driving elements so that currents flowing to the LED strings become constant currents; a lowest-voltage detecting circuit to which terminal voltages of the constant-current driving elements on an LED string side are inputted, the lowest-voltage detecting circuit selecting a lowest voltage from among the terminal voltages and outputting a command signal based on difference between the lowest voltage and a predetermined set voltage; and a power-supply control circuit controlling a voltage applied to the LED array to a voltage lower than an initial set voltage based on the command signal.