Abstract: The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n struct

Abstract: Provided is a composition containing a polyphenol compound (B) and a solvent, in which the polyphenol compound (B) is at least one selected from a compound represented by the following formula (1) and a resin having a structure represented by the following formula (2): wherein RY, RT, X, m, N, r, and L are as described in the description.

Abstract: The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least

Abstract: An object of the present invention is to provide a useful underlayer film forming composition. The following underlayer film forming composition can solve the problem described above. An underlayer film forming composition comprising: a compound having a constituent unit represented by the following formula (1); and a solvent, wherein the weight average molecular weight of the compound is 1,000 to 30,000 as the molecular weight in terms of polystyrene, and the solubility of the compound in propylene glycol monomethyl ether acetate is 10% by mass at 23° C.

Abstract: An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. A film forming material for lithography comprising a compound having a group of the following formula (0): can solve the problem described above.

Abstract: A composition containing a polyphenol compound (B), wherein the polyphenol compound (B) is one or more selected from the group consisting of a compound represented by the following formula (1) and a resin having a structure represented by the following formula (2):

Abstract: An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. The problem described above can be solved by the following film forming material for lithography. A film forming material for lithography comprising: a compound having a group of formula (0A): (In formula (0A), RA is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and RB is an alkyl group having 1 to 4 carbon atoms.

Abstract: A composition is provided for resist underlayer film formation comprising a compound represented by the following formula (1) and a silicon containing compound: [LxTe(OR1)y]??(1) (In formula (1), L is a ligand other than OR1; R1 is any of a hydrogen atom, a substituted or unsubstituted linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, and a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms; x is an integer of 0 to 6; y is an integer of 0 to 6; the sum of x and y is 1 to 6; when x is 2 or more, a plurality of L may be the same or different; and when y is 2 or more, a plurality of R1 may be the same or different.

Abstract: An object of the present invention is to provide a new compound that is useful as a film forming material for lithography and the like. The above object can be achieved by a compound represented by the following formula (1).

Abstract: An object of the present invention is to provide a compound and the like that are applicable to a wet process and are useful for forming a photoresist and an underlayer film for photoresists excellent in heat resistance, solubility, and etching resistance. A compound represented by the following formula (1) can solve the problem described above.

Abstract: A composition for resist underlayer film formation, containing a compound represented by the following formula (1). [LxTe(OR1)y]??(1) (In the above formula (1), L is a ligand other than OR1; R1 is any of a hydrogen atom, a substituted or unsubstituted, linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms and a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms; x is an integer of 0 to 6; y is an integer of 0 to 6; the total of x and y is 1 to 6; when x is 2 or more, a plurality of L may be the same or different; and when y is 2 or more, a plurality of R1 may be the same or different.

Abstract: A compound represented by the following formula (0).

Abstract: The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R2 to R5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m2 and m3 are each independently an integer of 0 to 8; m4 and m3 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m3 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2.

Abstract: A compound represented by the following formula (1).

Abstract: A composition for film formation for lithography of the present invention comprises at least one selected from the group consisting of an aromatic hydrocarbon formaldehyde resin and a modified aromatic hydrocarbon formaldehyde resin, wherein the aromatic hydrocarbon formaldehyde resin is a product of condensation reaction between an aromatic hydrocarbon having a substituted or unsubstituted benzene ring and formaldehyde, and the modified aromatic hydrocarbon formaldehyde resin is formed by modifying the aromatic hydrocarbon formaldehyde resin.

Abstract: The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R2 to R5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2.

Abstract: The present invention provides a compound represented by following formula (1), wherein R1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R2 to R5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R1 to R5 represents a group including an iodine atom and at least one R4 and/or at least one R5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m2 and m3 independently represents an integer of 0 to 8, each of m4 and m5 independently represents an integer of 0 to 9, provided that m4 and m5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p2 to p5 independently represents an integer of 0 to 2.

Abstract: A compound represented by the following formula (1): wherein each X independently represents an oxygen atom or a sulfur atom, or non-crosslinking, R1 represents a single bond or a 2n-valent group having 1 to 30 carbon atoms, the group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aryl group having 6 to 30 carbon atoms, each R2 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, an aryloxy group having 6 to 30 carbon atoms, or a hydroxyl group, in which at least one R2 represents an alkoxy group having 1 to 30 carbon atoms or an aryloxy group having 6 to 30 carbon atoms, each m is independently an integer of 1 to 6, each p is independently 0 or 1, and n is an integer of 1 to 4.

Abstract: The present invention provides a composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.

Abstract: The present invention provides a compound, a resin and a composition that are excellent in solvent solubility, are applicable to a wet process, are excellent in heat resistance and etching resistance, and are useful for forming a film for lithography. The present invention also provides pattern formation methods using the composition. The present invention further provides a method for purifying the compound and the resin. A composition comprising a compound having a specific structure and/or a resin having a constituent unit derived from the compound is used.