Abstract: A (poly)amine compound represented by the following formula (0): wherein RX is a 2nA-valent group having 1 to 70 carbon atoms or a single bond; each R1A is independently any of an alkyl group having 1 to 30 carbon atoms and optionally having a substituent, an aryl group having 6 to 30 carbon atoms and optionally having a substituent, a crosslinking group having 2 to 30 carbon atoms and optionally having a substituent, an alkoxy group having 1 to 30 carbon atoms and optionally having a substituent, a halogen atom, a nitro group, an amino group having 0 to 30 carbon atoms and optionally having a substituent, a carboxyl group, a thiol group and a hydroxy group, wherein when R1A is any of the alkyl group, the aryl group, the crosslinking group and the alkoxy group, R1A optionally contains at least one bond selected from the group consisting of an ether bond, a ketone bond and an ester bond, and at least one R1A is an amino group having 0 to 30 carbon atoms and optionally having a substituent; X is an oxygen at

Abstract: The present invention provides a film forming material for lithography comprising a compound having a group of the following formula (0):

Abstract: A compound represented by the following formula (1).

Abstract: A method for purifying a material, the method comprising: a step of preparing a solution comprising a solvent and at least one material selected from the group consisting of a compound represented by the following formula (1A) and a resin having a structure represented by the following formula (2A); and a step of purification in which the solution is passed through a filter: wherein, X represents an oxygen atom, a sulfur atom, a single bond, or non-crosslinked state; Ra represents a 2n-valent group having 1 to 40 carbon atoms or a single bond; each Rb independently represents one of various functional groups; each m is independently an integer of 0 to 9; n is an integer of 1 to 4; and each p is independently an integer of 0 to 2; provided that at least one Rb represents a group comprising one selected from a hydroxyl group and a thiol group, and all m cannot be 0 at the same time; wherein, X, Ra, Rb, n and p are the same as defined in the formula (1A); Rc represents a single bond or an

Abstract: A compound represented by the following formula (1): wherein each X independently represents an oxygen atom or a sulfur atom, or non-crosslinking, R1 represents a single bond or a 2n-valent group having 1 to 30 carbon atoms, the group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aryl group having 6 to 30 carbon atoms, each R2 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, an aryloxy group having 6 to 30 carbon atoms, or a hydroxyl group, in which at least one R2 represents an alkoxy group having 1 to 30 carbon atoms or an aryloxy group having 6 to 30 carbon atoms, each m is independently an integer of 1 to 6, each p is independently 0 or 1, and n is an integer of 1 to 4.

Abstract: A compound or a resin represented by the following formula (1).

Abstract: A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used.

Abstract: The composition for forming an underlayer film for lithography according to the present invention contains a compound represented by a specific formula (1) and 20 to 99% by mass of a solvent component (S), in which 27 to 100% by mass of the compound represented by the formula (1) is included in a component (A) other than the solvent component (S).

Abstract: The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): wherein, each R0 independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.

Abstract: The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

Abstract: The present invention employs a compound represented by the following formula (1) and/or a resin comprising the compound as a constituent: wherein R1 is a 2n-valent group of 1 to 60 carbon atoms or a single bond; R2 to R5 are each independently a linear, branched, or cyclic alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, provided that at least one selected from R2 to R5 is a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group; m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, provided that m2, m3, m4, and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are each independently an integer of 0 to 2.

Abstract: The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n struct

Abstract: The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each m2 is independently an integer of 0 to 7, in which at lea

Abstract: A compound or a resin represented by the following formula (1).

Abstract: A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used.

Abstract: A material for forming an underlayer film for lithography, including a cyanic acid ester compound obtained by cyanation of a modified xylene formaldehyde resin, a composition including the material, and a pattern forming method using the composition.

Abstract: The present invention provides a compound represented by following formula (1), wherein R1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R2 to R5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R1 to R5 represents a group including an iodine atom and at least one R4 and/or at least one R5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m2 and m3 independently represents an integer of 0 to 8, each of m4 and m5 independently represents an integer of 0 to 9, provided that m4 and m5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p2 to p5 independently represents an integer of 0 to 2.

Abstract: The method according to the present invention is a method for purifying a compound represented by a specific formula (1) or a resin having a structure represented by a specific formula (2), the method including a step of bringing a solution (A) including an organic solvent optionally immiscible with water, and the compound or the resin into contact with an acidic aqueous solution.

Abstract: A compound represented by the following formula (1).

Abstract: The present invention provides a material for forming an underlayer film for lithography, including a cyanic acid ester compound obtained by cyanation of a modified naphthalene formaldehyde resin.