Abstract: A semiconductor device includes an oxide semiconductor film having a corundum structure or containing as a major component gallium oxide or a mixed crystal of gallium oxide, and the semiconductor device is a normally-off semiconductor device with a threshold voltage that is 3V or more.

Abstract: In a first aspect of a present inventive subject matter, a solvent contains a nonpolar solvent containing an aromatic compound and a polar solvent that is an aprotic polar solvent. The ratio of the nonpolar solvent to the polar solvent by volume ratio is 5:1 to 1:1.

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ?-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.

Abstract: An industrially useful p-type oxide semiconductor with an enhanced semiconductor characteristic and a method of forming the p-type oxide semiconductor is provided. By using a metal oxide (for example, iridium oxide) gas as a raw material and conducting a crystal growth on a base with a corundum structure (for example, a sapphire substrate) until a film thickness to be equal to or more than 50 nm, a p-type oxide semiconductor film with a corundum structure includes a film thickness of equal to or more than 50 nm and a surface roughness of equal to or less than 10 nm is obtained.

Abstract: A crystalline oxide film with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide film including a first crystal axis, a second crystal axis; a metal oxide as a major component that includes gallium, a first side; and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Abstract: A semiconductor device according to embodiments includes a p-type SiC region, a gate insulating film disposed on the p-type SiC region, and a gate electrode disposed on the gate insulating film and including a p-type impurity and 3C—SiC.

Abstract: A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode.

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a base layer, and a crystalline oxide film including a corundum structure and including an r-plane as a principal plane. The crystalline oxide film is directly arranged on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film is with a full width at half maximum (FWHM) of rocking curve that is 0.1° or less by ?-scan X-ray diffraction (XRD) measurement.

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.

Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 ?m2 or more, and a dislocation density that is less than 5×106 cm?2.

Abstract: A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a base layer, and a crystalline oxide film including a corundum structure and including an r-plane as a principal plane. The crystalline oxide film is directly arranged on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film is with a full width at half maximum (FWHM) of rocking curve that is 0.1° or less by ?-scan X-ray diffraction (XRD) measurement.

Abstract: In a first aspect of a present inventive subject matter, a method of surface treatment includes preparing a raw material solution containing a chemical substance and a solvent with a boiling point; homogenizing the raw material solution containing the chemical substance and the solvent; generating atomized droplets by atomizing the raw material solution containing the chemical substance and the solvent; supplying carrier gas to the atomized droplets to carry the atomized droplets onto a base; and causing thermal reaction of the atomized droplets adjacent to the base at a temperature that is the boiling point of the solvent or at a higher temperature than the boiling point of the solvent contained in the raw material solution to apply surface treatment to the base.

Abstract: In a first aspect of a present inventive subject matter, a method of forming an organic film includes preparing a raw material solution containing an organic compound and a solvent with a boiling point that is 150° C. or higher; generating atomized droplets by atomizing the raw material solution containing the organic compound and the solvent with the boiling point that is 150° C. or higher; carrying the atomized droplets onto a base; and causing thermal reaction of the atomized droplets adjacent to the base at a temperature that is the boiling point of the solvent or at a higher temperature than the boiling point of the solvent contained in the raw material solution to form an organic film on the base.

Abstract: A semiconductor device according to an embodiment includes a SiC semiconductor layer, a gate electrode, a gate insulating film provided between the SiC semiconductor layer and the gate electrode, and a region that is provided between the SiC semiconductor layer and the gate insulating film and includes at least one element selected from the group consisting of antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), and lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The concentration of the at least one element is equal to or greater than 1×1019 cm?3 and equal to or less than 2.4×1022 cm?3.

Abstract: In a first aspect of a present inventive subject matter, a solvent contains a nonpolar solvent containing an aromatic compound and a polar solvent that is an aprotic polar solvent. The ratio of the nonpolar solvent to the polar solvent by volume ratio is 5:1 to 1:1.

Abstract: In a method for fabricating a semiconductor substrate according to an embodiment, an SiC substrate is formed by vapor growth and C (carbon) is introduced into the surface of the SiC substrate to form an n-type SiC layer on the SiC substrate by an epitaxial growth method.

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a base including a first metal as a major component and a second metal that is different from the first metal, and a thermal oxide film of the base arranged on the base and containing an oxide of the first metal and an oxide of the second metal. The first metal contained in the base is more in atomic composition ratio than the second metal contained in the base. The first metal of the oxide contained in the thermal oxide film is less in atomic composition ratio than the first metal contained in the base. The second metal of the oxide contained in the thermal oxide film is equal to or more in atomic ratio than the first metal of the oxide contained in the thermal oxide film.

Abstract: In a first aspect of a present inventive subject matter, a method of forming a film includes turning a raw material containing at least a first chemical element and a second chemical element into atomized droplets; carrying the atomized droplets containing at least the first chemical element and the second chemical element by use of a carrier gas onto an object; and causing a reaction of the atomized droplets to form a film containing at least the first chemical element and the second chemical element on the object. The first chemical element is selected from among elements of Group 14 and elements of Group 15 of the periodic table. The second chemical element is selected from among d-block elements, elements of Group 13 and elements of Group 14 of the periodic table and different from the first chemical element.