Abstract: A processing system includes a processing chamber, a circulating device for purifying an inside ambience gas of the processing chamber and for circulating the purified gas back into the processing chamber, a measuring device for measuring the purity of the ambience gas, and an adjusting device for adjusting the purification capacity of the purifying device in accordance with an output of the measuring device. In another form, a processing system includes a first processing chamber in which a first process is to be performed therein, a second processing chamber in which a second process is to be performed therein, and a device for introducing an ambience gas, having been used in said first processing chamber for the first process, into the second chamber for reuse thereof. The gas subsequently used in the second chamber is introduced back into the first chamber for reuse of the gas. At least a portion of the circulated gas is purified to improve its purity.

Abstract: A processing system for processing semiconductor devices includes an adjusting device for adjusting atmospheric conditions such as the cleanness and temperature in a clean room, at least one processing device disposed in the clean room, and a control device for controlling operation of the adjusting device in accordance with an operating state of at least one of the processing devices. The invention makes it possible to highly control the air conditioning of a required location and at a required time.

Abstract: A processing system is disclosed which includes first and second chambers, each for accommodating a processing apparatus therein, each chamber being able to be kept gas tight, a coupling member for coupling the processing apparatuses accommodated in the first and second chambers with each other, and an elastic gas tightness holding member for gas tightly sealing portions between the coupling member and the first and second chambers.

Abstract: The sonic velocity in a chamber which is filled with helium is measured by using ultrasonic waves, and the temperature in the chamber is also measured. Purity information relating to helium gas contained in the chamber is determined on the basis of the measured values of the sonic velocity and the temperature.

Abstract: An X-ray apparatus is disclosed which includes a mirror having a reflection surface, for expanding an X-ray beam in a predetermined direction, a detecting device for detecting a relative positional relationship between the X-ray beam and the reflection surface with respect to a direction perpendicular to the reflection surface, and an adjusting device for adjusting the relative position of the X-ray beam and the reflection surface on the basis of the detection. Also disclosed is an exposure apparatus and a semiconductor device manufacturing method using the X-ray apparatus.

Abstract: An exposure apparatus and method for exposing a workpiece to a pattern of an original with radiation includes a masking device having movable blades for variably defining an aperture to selectively block and transmit the radiation to define on the workpiece a desired exposure zone corresponding to the aperture, the masking device having a window, and a detector for detecting the positional deviation between the original and the workpiece by using light passing through the window of the masking device.

Abstract: Method of manufacturing a transistor which includes an emitter pattern and a base pattern and provides a predetermined current amplification factor, and said method includes a step of measuring a current amplification factor of a monitor transistor during the manufacturing process, the characteristic feature of said method includes the steps of forming a monitor transistor pattern providing the same amplification factor as the semi-conductor device to be manufactured, providing additional portions to an emitter pattern and a base pattern of said monitor transistor pattern, contacting a probe of the measuring apparatus to said additional portions and effecting the measurement of the amplification factor of the monitor transistor.