Abstract: A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.

Abstract: A method for estimation of a probe shape, in a scanning electron microscope provided with an aberration corrector, and the method is designed so as to obtain a probe image, by inputting to a computer an image taken in a just-focused state and an image taken in a de-focused state, as an image data; preparing a correlation window by automatically determining a size of a correlation window image, based on an input data size and an output data size; executing cross-correlation calculation between the correlation window and a reference area; and repeating this calculation while shifting the reference area, so as to obtain a cross-correlation matrix, in order to stably obtain the probe image, without receiving effects of use conditions or noises.

Abstract: Disclosed is a scanning charged particle microscope provided with an aberration measuring means that measures high-order geometrical aberration at high precision and high speed. An image obtained by a single-hole aperture and an image obtained by a multiple-hole aperture arranged in a region larger than that for the single-hole aperture are deconvoluted, an aberration quantity is determined based on the profiles of beams tilted in a plurality of directions and the obtained quantity is fed back to an aberration corrector.

Abstract: A method for estimation of a probe shape, in a scanning electron microscope provided with an aberration corrector, and the method is designed so as to obtain a probe image, by inputting to a computer an image taken in a just-focused state and an image taken in a de-focused state, as an image data; preparing a correlation window by automatically determining a size of a correlation window image, based on an input data size and an output data size; executing cross-correlation calculation between the correlation window and a reference area; and repeating this calculation while shifting the reference area, so as to obtain a cross-correlation matrix, in order to stably obtain the probe image, without receiving effects of use conditions or noises.

Abstract: In a charged-particle beam apparatus having a high-accuracy and high-resolution focusing optical system for charged-particle beam, a group of coils are arranged along a beam emission axis to extend through the contour of radial planes each radiating from the beam emission axis representing a rotary axis and each having a circular arc which subtends a divisional angle resulting from division of a circumferential plane by a natural number larger than 2 so that a superposed magnetic field may be generated on the incident axis of the charged-particle beam and the trajectory of the charged-particle beam may be controlled by the superposed magnetic field.

Abstract: The present invention provides an aberration corrector giving excellent assembly accuracy but having fewer parts and fewer adjustment locations in number. In order to achieve it, a multistage multipole is formed by arranging plural combinations of electrodes around an optical axis using alignment blocks, each combination of electrodes being made by brazing-integrating plural electrodes with a ceramic material interposed therebetween.

Abstract: An electron beam apparatus with an aberration corrector using multipole lenses is provided. The electron beam apparatus has a scan mode for enabling the operation of the aberration corrector and a scan mode for disabling the operation of the aberration corrector and the operation of each of the aberration corrector, a condenser lens, and the like is controlled such that the object point of an objective lens does not change in either of the scan modes. If a comparison is made between the secondary electron images of a specimen in the two modes, the image scaling factor and the focus remain unchanged and evaluation and adjustment can be performed by distinctly recognizing only the effect of the aberration corrector. This reduces the time required to adjust an optical axis which has been long due to an axial alignment defect inherent in the aberration corrector and an axial alignment defect in a part other than the aberration corrector which are indistinguishably intermingled with each other.

Abstract: A method for estimation of a probe shape, in a scanning electron microscope provided with an aberration corrector, and the method is designed so as to obtain a probe image, by inputting to a computer an image taken in a just-focused state and an image taken in a de-focused state, as an image data; preparing a correlation window by automatically determining a size of a correlation window image, based on an input data size and an output data size; executing cross-correlation calculation between the correlation window and a reference area; and repeating this calculation while shifting the reference area, so as to obtain a cross-correlation matrix, in order to stably obtain the probe image, without receiving effects of use conditions or noises.

Abstract: In a charged-particle beam apparatus having a high-accuracy and high-resolution focusing optical system for charged-particle beam, a group of coils are arranged along a beam emission axis to extend through the contour of radial planes each radiating from the beam emission axis representing a rotary axis and each having a circular arc which subtends a divisional angle resulting from division of a circumferential plane by a natural number larger than 2 so that a superposed magnetic field may be generated on the incident axis of the charged-particle beam and the trajectory of the charged-particle beam may be controlled by the superposed magnetic field.

Abstract: A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.

Abstract: A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a source electrode and a gate electrode formed on the GaN-based semiconductor layer, current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes, and a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.

Abstract: The present invention provides a stable charged particle beam apparatus to enable high-resolution observation by reducing the influence of the noise of a large number of power supplies used in an aberration corrector. The charged particle beam apparatus that has: an SEM column for irradiating an electron beam onto a specimen and making the electron beam scan it; a specimen chamber for housing a specimen stage on which the specimen is placed and held; a detector for detecting secondary electrons generated by the scanning of the electron beam; display means for displaying an output signal of the detector as an SEM image; and a control unit for controlling component parts including the SEM column, the specimen chamber, and the display means.

Abstract: A charged particle beam apparatus includes: a correction image acquisition part 52 for making a detector 20 acquire items of two-dimensional image data at different focal positions; a directional differentiation operation part 53 for obtaining directional derivative values in a plurality of directions for each of the items of two-dimensional image data at different focal positions; an aberration parameter calculation part 54 for obtaining aberration parameters according to previously determined methods by using the directional derivative values in a plurality of directions for each of the items of two-dimensional image data; an aberration correction value calculation part 55 for obtaining correction values for aberrations by using the aberration parameters; and a control part 56 for setting the correction values in a correction optical system control means to make an aberration corrector 16 correct the aberrations.

Abstract: A mobile radio communication method in which a radio resource is shared with a first communication between one of first mobile terminal devices and a radio base station, which is performed by using an infrastructure mode for performing communication controlled based on scheduling by the radio base station, and a second communication between a plurality of second mobile terminal devices, which is performed by using an ad hoc mode for performing communication by autonomous distributed control, the mobile radio communication method including advertising, by the one of the first mobile terminal devices in an area in which the radio base station exists, at a timing specified by the radio base station, a radio resource which is usable for the second communication in the ad hoc mode and is not used for the first communication in the infrastructure mode, to one of the second mobile terminal devices that is present in a range which a radio wave reaches from the one of the first mobile terminal devices and performs the

Abstract: A tilted illumination observation method and observation device with easy adjustment, high speed, good reproducibility and low cost is provided. A high resolution tilt image of a specimen is obtained by extracting the blurring on the scanning spot occurring during beam tilt from the image (step 6) captured by the tilted beam, and the image (step 4) captured from directly above the standard specimen; and then deconvoluting (step 11, 12) the tilted image of the target specimen (step 10) using the extracted scanning spot from the oblique beam.

Abstract: A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.

Abstract: A focused charged particle beam apparatus including an aberration corrector, capable of finding the absolute value of the aberration coefficient at high speed, and capable of making high-accuracy adjustments at high speed. A deflection coil tilts the input beam relative to the object point, and measures the defocus data and aberration quantity at high speed while the beam is tilted from one image, and perform least squares fitting on these results to find the absolute value of the aberration coefficient prior to tilting the beam, and to adjust the aberration corrector.

Abstract: A charged particle beam apparatus having an aberration correction capability at high acceleration voltages. The charged particle beam apparatus comprises a charged particle beam source; an extraction electrode to extract charged particles from the charged particle beam source; a charged particle beam gun including a means for converging a charged particle beam; an acceleration means for accelerating a charged particle beam emitted from the charged particle beam gun; and an aberration correction means disposed between the charged particle beam gun and the acceleration means, in which an aberration enough to cancel out an aberration of a charged particle beam on the specimen surface is provided to an extraction electrical potential or an equivalent beam at the initial acceleration stage.

Abstract: A scanning electron microscope includes an electron gun to generate an electron beam, and an electron optical system directing the electron beam to a specimen. The electron optical system includes an objective lens that converges the electron beam to a surface of the specimen, an aberration corrector disposed between the electron gun and the objective lens so as to at least compensate for aberration caused by the objective lens, and a tilter which tilts electron beam to be incident into the aberration corrector. The aberration corrector further compensates for aberration caused by the tilter.

Abstract: A charged particle beam apparatus having an aberration correction capability at high acceleration voltages. The charged particle beam apparatus comprises a charged particle beam source; an extraction electrode to extract charged particles from the charged particle beam source; a charged particle beam gun including a means for converging a charged particle beam; an acceleration means for accelerating a charged particle beam emitted from the charged particle beam gun; and an aberration correction means disposed between the charged particle beam gun and the acceleration means, in which an aberration enough to cancel out an aberration of a charged particle beam on the specimen surface is provided to an extraction electrical potential or an equivalent beam at the initial acceleration stage.