Abstract: A vapor phase growth method using a vapor phase growth apparatus including a reaction chamber, a shower plate disposed in the upper portion of the reaction chamber so as to supply a gas into the reaction chamber, and a support portion provided below the shower plate inside the reaction chamber so as to place a substrate thereon, the method includes: placing the substrate on the support portion; heating the substrate; preparing a plurality of kinds of process gases for a film formation process; preparing a mixed gas by controlling mixing ratio between a first purging gas and a second purging gas, wherein the first purging gas and the second purging gas are selected from hydrogen and inert gases, a molecular weight of the first purging gas is smaller than an average molecular weight of the plurality of kinds of process gases and a molecular weight of the second purging gas is larger than the average molecular weight of the plurality of kinds of process gases, so that the average molecular weight of the mixed ga

Abstract: A film-forming apparatus and film-forming method comprising, a chamber, a first gas supply unit supplying a reaction gas for a film-forming process to the chamber, a substrate-supporting portion supporting a substrate placed in the chamber, a heating unit heating the substrate from below the substrate-supporting portion, a rotary drum supporting the substrate-supporting portion on a top thereof, and including the heating unit disposed therein, a rotary shaft disposed in a lower part of the chamber, and rotating the rotary drum, a reflector reflecting heat from the heating unit, surrounding the rotary drum, and being disposed so as to have an upper end higher in height than an upper end of the substrate-supporting portion, and a second gas supply unit supplying a hydrogen gas or an inert gas between the rotary drum and the reflector.

Abstract: A method of filling a depression of a workpiece is provided. The depression passes through an insulating film and extends up to an inside of a semiconductor substrate. The method includes forming a first thin film made of a semiconductor material along a wall surface which defines the depression, performing gas phase doping on the first thin film, by annealing the workpiece within a vessel, forming an epitaxial region from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed, forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate includes: forming an impurity-doped first semiconductor layer along a wall surface which defines the depression; forming, on the first semiconductor layer, a second semiconductor layer which is lower in impurity concentration than the first semiconductor layer and which is smaller in thickness than the first semiconductor layer; annealing the workpiece to form an epitaxial region at the bottom of the depression corresponding to crystals of the semiconductor substrate from the first semiconductor layer and the second semiconductor layer; and etching the first amorphous semiconductor region and the second amorphous semiconductor region.

Abstract: A vapor phase growth apparatus in an embodiment includes: a shower plate in an upper portion of the reaction chamber, the shower plate having first lateral gas flow passages in a first horizontal plane, first longitudinal gas flow passages being connected to the first lateral gas flow passages, the first longitudinal gas flow passages extending in a longitudinal direction, each of the first longitudinal gas flow passages having a first gas ejection hole, the shower plate having second lateral gas flow passages in a second horizontal plane upper than the first horizontal plane, second longitudinal gas flow passages being connected to the second lateral gas flow passages, the second longitudinal gas flow passages extending in the longitudinal direction through between the first lateral gas flow passages, each of the second longitudinal gas flow passages having a second gas ejection hole, and a support unit provided below the shower plate.

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a gas supply path connected to an organic metal supply source at a first connection, the gas supply path being connected to a carrier gas supply source, the gas supply path supplies a process gas including organic metal and a carrier gas into the reaction chamber; a gas discharge path connected to the organic metal supply source at a second connection, the gas discharge path discharges the process gas to the outside of the apparatus; a first mass flow controller and a first adjustment device provided at the gas supply path; a second adjustment device provided at the gas discharge path; and a shortcut path connecting the gas supply path to the gas discharge path. One of the first and the second adjustment device is a back pressure regulator, and the other is a mass flow controller.

Abstract: A method of filling a depression of a workpiece is provided. The depression passes through an insulating film and extends up to an inside of a semiconductor substrate. The method includes forming a first thin film made of a semiconductor material along a wall surface which defines the depression, performing gas phase doping on the first thin film, by annealing the workpiece within a vessel, forming an epitaxial region from the semiconductor material of the first thin film along a surface of the semiconductor substrate which defines the depression, without moving the first thin film with the gas phase doping performed, forming a second thin film made of a semiconductor material along the wall surface which defines the depression; and by annealing the workpiece within the vessel, further forming an epitaxial region from the semiconductor material of the second thin film moved toward a bottom of the depression.

Abstract: A vapor phase growth apparatus includes: a reaction chamber; a lower region provided below the reaction chamber; a rotating body provided in the reaction chamber; a rotating shaft connected to the rotating body and having a lower end provided in the lower region; a support portion provided in an upper portion of the rotating body and supporting a substrate; a reaction gas supply port provided on the reaction chamber and supplying a reaction gas for forming a film on the substrate into the reaction chamber; a rotating mechanism including a rotor, the rotating mechanism provided in the lower region and configured to rotate the rotating shaft; a first bearing provided in the lower region and rotatably supporting the rotating shaft; a second bearing provided below the first bearing in the lower region, the second bearing rotatably supporting the rotating shaft; a first air supply port provided above the rotating mechanism and the first bearing in the lower region, the first air supply port supplying a first gas i

Abstract: There is provided a method of filling a recess of a workpiece, which includes: forming a first thin film made of a semiconductor material along a wall surface defining a recess in a semiconductor substrate; annealing the workpiece within a vessel whose internal process is set to a first pressure, and forming an epitaxial region which is generated by crystallizing the semiconductor material of the first thin film, along a surface defining the recess, without moving the first thin film; forming a second thin film made of the semiconductor material along the wall surface defining the recess; and annealing the workpiece within the vessel whose internal pressure is set to a second pressure lower than the first pressure, and forming a further epitaxial region which is generated by crystallizing the semiconductor material of the second thin film which is moved toward a bottom of the recess.

Abstract: A semiconductor substrate according to embodiments includes a silicon substrate, a silicon nitride layer on the silicon substrate, the silicon nitride layer having a thickness of 1 nm or thicker, single-crystal aluminum nitride layer on the silicon nitride layer, and a single-crystal layer on the aluminum nitride layer, the single-crystal layer containing gallium (Ga).

Abstract: A vapor phase growth method of growing a film on a substrate by supplying material gases to the substrate while heating the substrate with a heating unit according to an embodiment, the method includes: measuring a temperature of the substrate with a radiation thermometer; executing a temperature feedback control to control an output of the heating unit to cause a measurement value of the radiation thermometer to have a set value when a film is not grown on the substrate; and executing a constant output control to maintain an output of the heating unit constant when a film causing thin-film interference in a wavelength measured by the radiation thermometer is grown on the substrate.

Abstract: A vapor phase growth method according to embodiments uses a vapor phase growth apparatus including a reaction chamber, a transfer chamber, and a standby chamber. After a film containing gallium (Ga) is formed on a first substrate, a deposit adhering to a support is covered with a coating film or is removed. After that, an aluminum nitride film is formed successively on a plurality of substrates having a silicon (Si) surface, and the substrates are transferred into the standby chamber. Then, the substrates are transferred sequentially from the standby chamber into the reaction chamber, such that a film containing gallium (Ga) is formed successively on the substrates.

Abstract: A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate includes: forming an impurity-doped first semiconductor layer along a wall surface which defines the depression; forming, on the first semiconductor layer, a second semiconductor layer which is lower in impurity concentration than the first semiconductor layer and which is smaller in thickness than the first semiconductor layer; annealing the workpiece to form an epitaxial region at the bottom of the depression corresponding to crystals of the semiconductor substrate from the first semiconductor layer and the second semiconductor layer; and etching the first amorphous semiconductor region and the second amorphous semiconductor region.

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a first gas supply path configured to supply a first process gas including organic metal and a carrier gas into the reaction chamber; a second gas supply path configured to supply a second process gas including ammonia into the reaction chamber; a first carrier gas supply path configured to supply a first carrier gas of a hydrogen or inert gas into the first gas supply path while being connected to the first gas supply path and including a first mass flow controller; and a second carrier gas supply path configured to supply a second carrier gas of a hydrogen or inert gas different from the first carrier gas into the first gas supply path while being connected to the first gas supply path and including a second mass flow controller.

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a gas supply path connected to an organic metal supply source at a first connection, the gas supply path being connected to a carrier gas supply source, the gas supply path supplies a process gas including organic metal and a carrier gas into the reaction chamber; a gas discharge path connected to the organic metal supply source at a second connection, the gas discharge path discharges the process gas to the outside of the apparatus; a first mass flow controller and a first adjustment device provided at the gas supply path; a second adjustment device provided at the gas discharge path; and a shortcut path connecting the gas supply path to the gas discharge path. One of the first and the second adjustment device is a back pressure regulator, and the other is a mass flow controller.

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber configured to perform a film formation process of nitride; a first gas supply path configured to supply a halogen-based gas; a second gas supply path configured to supply an ammonia gas; a shower plate disposed at the upper portion of the reaction chamber, the shower plate configured to supply the halogen-based gas and the ammonia gas into the reaction chamber, the shower plate having a first gas passage and a second gas passage in the shower plate, the first gas passage connected to the first gas supply path and the second gas passage connected to the second gas supply path, the second gas passage being separated from the first gas passage in the shower plate until the second gas passage reaches the reaction chamber; and a substrate provided inside the reaction chamber.

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; and a support portion disposed below the shower plate inside the reaction chamber to place a substrate thereon. Then, the shower plate includes a plurality of first and second lateral gas passages disposed within different horizontal planes and first and second gas ejection holes connected to the first and second lateral gas passages. Further, the shower plate includes a center lateral gas passage that passes through a position directly above the rotation center of the support portion and third gas ejection holes connected to the center lateral gas passage. Then, the gases ejected from the first and second gas ejection holes and the center gas ejection holes are independently controllable.

Abstract: A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; a support portion provided below the shower plate inside the reaction chamber to place a substrate thereon; a process gas supply line that supplies a process gas; and a purging gas supply line that supplies a gas obtained by mixing first and second purging gases selected from hydrogen and an inert gas. Then, an inner area of the shower plate is provided with process gas ejection holes, and an outer area of the shower plate is provided with purging gas election holes. Then, the process gas supply line is connected to the process gas ejection holes, and the purging gas supply line is connected to the purging gas ejection holes.

Abstract: A vapor phase growth apparatus in an embodiment includes: a shower plate in an upper portion of the reaction chamber, the shower plate having first lateral gas flow passages in a first horizontal plane, first longitudinal gas flow passages being connected to the first lateral gas flow passages, the first longitudinal gas flow passages extending in a longitudinal direction, each of the first longitudinal gas flow passages having a first gas ejection hole, the shower plate having second lateral gas flow passages in a second horizontal plane upper than the first horizontal plane, second longitudinal gas flow passages being connected to the second lateral gas flow passages, the second longitudinal gas flow passages extending in the longitudinal direction through between the first lateral gas flow passages, each of the second longitudinal gas flow passages having a second gas ejection hole, and a support unit provided below the shower plate.