Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower.

Abstract: A glass substrate having a fine structure on the surface thereof, wherein said glass substrate is made of vanadium-containing glass and said vanadium-containing glass has a resistivity no higher than 109 ?·cm, with the content of vanadium (in the form of V2O5) being no less than 10 wt % and no more than 60 wt %. The glass substrate prevents dust attraction and retains its antifouling properties over a long period of time.

Abstract: A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower.

Abstract: In order to provide a semiconductor junction element consisted of an oxide semiconductor glass, which does not contain a toxic element and rare metal element, and various semiconductor devices using it, semiconductor glasses which contain vanadium oxide and have different polarities are connected each other in a semiconductor junction element of the present invention. Moreover, a semiconductor glass containing vanadium oxide is connected to an element semiconductor or a compound semiconductor which have different polarity from the semiconductor glass. Furthermore, a semiconductor glass containing vanadium oxide is connected to a metal.

Abstract: A lithium ion secondary battery has a high cycle retention rate, and has its battery capacity increased. A positive electrode active material is used which includes a crystal phase having a structure formed by collecting a plurality of crystallites 101, and powder particles containing amorphous phases 103a and 103b formed between the crystallites 101. The amorphous phases 103a and 103b contain one or more kinds of metal oxides selected from the group consisting of vanadium oxide, iron oxide, manganese oxide, nickel oxide and cobalt oxide. The crystal phase and the amorphous phase 103a and 103b are capable of intercalation and deintercalation of lithium ions.

Abstract: Disclosed is a constitution formed from an oxide of an element having a smaller work function than aluminum. This oxide is comprises an oxide of vanadium (V), an oxide of an alkaline earth metal and an oxide of an alkali metal. The elements for the alkaline earth metal are comprise one or more elements out of the elements calcium (Ca), strontium (Sr) and barium (Ba) and at least contain barium. The elements for the alkali metal include at least one or more of sodium (Na), potassium (K), rubidium (Rb) and cesium (Cs). When the element vanadium is included as vanadium pentoxide (V2O5), the vanadium pentoxide content is 40-70 wt %. Thus, a glass composition for aluminum electrode wiring with an apparent work function for electrode wiring that is smaller than the work function for aluminum (Al) can be provided without the inclusion of lead.

Abstract: Disclosed is an electroconductive material which contains at least a vanadium oxide and a phosphorus oxide, and has a crystalline structure composed of a crystalline phase and an amorphous phase, in which the crystalline phase contains a monoclinic vanadium-containing oxide, and a volume of the crystalline phase is larger than that of the amorphous phase. The electroconductive material has a reduced specific resistance and has improved functions as an electrode material, a solid-state electrolyte, or a sensor such as a thermistor.

Abstract: The conductive paste contains the following dispersed in a binder resin dissolved in a solvent: a plurality of particles comprising aluminum and/or an aluminum-containing alloy; and an oxide-comprising powder. The oxide contains vanadium with a valence no greater than 4 and a glass phase. In the method for manufacturing an electronic component, the conductive paste is applied to a substrate and fired, forming electrode wiring. The electronic component is provided with electrode wiring that has: a plurality of particles comprising aluminum and/or an aluminum-containing alloy; and an oxide affixing the particles to a substrate. The oxide contains vanadium with a valence no greater than 4. A compound layer containing vanadium and aluminum is formed on the surfaces of the particles, and the vanadium in the compound layer includes vanadium with a valence no greater than 4. This results in an electrode wiring with high reliability and water resistance.

Abstract: An object of the present invention is to provide an electronic component using a Cu-based conductive material that can suppress oxidization even in a heat treatment in an oxidizing atmosphere and that can suppress an increase in an electrical resistance. In an electronic component having an electrode or a wiring, a ternary alloy made from three elements consisting of Cu, Al, and Co is used as a Cu-based wiring material that can prevent oxidization of the electrode or the wiring. Specifically, part or the whole of the electrode or the wiring has a chemical composition in which an Al content is 10 at % to 25 at %, a Co content is 5 at % to 20 at %, and the balance is composed of Cu and unavoidable impurities, and the chemical composition represents a ternary alloy in which two phases of a Cu solid solution formed by Al and Co being dissolved into Cu and a CoAl intermetallic compound coexist together.

Abstract: The present invention provides a paste composition for an electrode, the paste composition including phosphorus-tin-containing copper alloy particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell.

Abstract: The present invention provides a paste composition for an electrode, the paste composition comprising phosphorus-containing copper alloy particles, tin-containing particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell.

Abstract: A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: A wiring member comprising a substrate, a copper wiring layer having an electrical resistivity of not larger than 4×10?6 ?cm in directly or indirectly contact with the substrate, an aluminum diffusion layer, contiguous to the copper wiring layer, having an aluminum concentration gradient descending towards the inside, and an aluminum oxide layer contiguous to and covering the aluminum diffusion layer, wherein a ratio of a thickness of the copper wiring layer to a thickness of the aluminum diffusion layer is 1.5 to 5. The disclosure is also concerned with a method of manufacturing the wiring member and an electronic device.

Abstract: A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An MxV2O5 crystal is selectively precipitated in vanadium-based glass, wherein M is one metal element selected from the group consisting of iron, arsenic, antimony, bismuth, tungsten, molybdenum, manganese, nickel, copper, silver, an alkali metal and an alkaline earth metal, and 0<x<1.

Abstract: In a positive electrode active material for a magnesium secondary battery and a magnesium secondary battery using it, there is contained a powder particle containing a crystal phase having a structure formed with aggregation of a plurality of crystallites, and amorphous phases formed between the crystallites themselves; the amorphous phases contain at least one kind of a metal oxide selected from a vanadium oxide, an iron oxide, a manganese oxide, a nickel oxide and a cobalt oxide; and the crystal phase and the amorphous phases use the positive electrode active material enabling to store and release magnesium ions.

Abstract: In an electronic component having a wiring and/or an electrode prepared through firing of a paste or in an electronic component having a wiring in contact with a glass or glass ceramic member, provided is an electronic component using a Cu-based wiring material which less suffers from increase in electric resistance due to oxidation, which less causes bubbles in the glass or glass ceramic, and has satisfactory migration resistance. The Cu—Al alloy powder includes a Cu—Al alloy powder including Cu and, preferably, 50 percent by weight or less of Al; and an aluminum oxide film having a thickness of 80 nm or less and being present on the surface of the Cu—Al alloy powder. The powder, when compounded with a glass or glass ceramic material to give a paste, can be used to form wiring (interconnections), electrodes, and/or contact members.

Abstract: A glass composition according to the present invention comprises: phosphorus, vanadium and at least one transition metal selected from a group consisting of tungsten, iron, and manganese, the glass composition not containing substances included in the JIG level A and B lists, a softening point of the glass composition being 550° C. or lower.