Abstract: A substrate processing apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; an exhaust port arranged around the stage along an inner wall of the processing container; a driver configured to move the stage up and down between a processing position and a transfer position lower than the processing position; a clamp ring that is arranged on a peripheral edge of the substrate on the stage to cover the peripheral edge of the substrate when the stage is at the processing position, and is supported by a shelf provided on a sidewall of the processing container when the stage is at the transfer position; and a pressure regulating mechanism configured to suppress a pressure difference between a space above the substrate on the stage and a space below the stage.

Abstract: [Problem] Provided is a method for producing a water-absorbing resin powder excellent in water absorption speed. [Solution] The method for producing a water-absorbing resin powder according to the present invention includes a polymerization step of polymerizing an aqueous monomer solution to obtain a crosslinked hydrogel polymer, a gel-crushing step of crushing the crosslinked hydrogel polymer after the polymerization step using a gel-crushing device to obtain a crosslinked particulate hydrogel polymer, and a drying step of drying the crosslinked particulate hydrogel polymer to obtain a dried product, and in the method, the gel-crushing device includes an input port, a discharge port, and a main body incorporating a plurality of rotation axes each including a crusher, in the gel-crushing step, the crosslinked hydrogel polymer is continuously put into the gel-crushing device from the input port, the crosslinked hydrogel polymer is continuously crushed by the crusher at 50° C.

Abstract: A thermocouple structure according to one aspect of the present disclosure includes a first element wire, second element wires formed of a material different from the first element wire, an insulating covering member covering at least one of the first element wire and the second element wires, and a protective tube accommodating the first element wire and the second element wire. Each of the second element wires is bonded to a different position on the first element wire.

Abstract: A semiconductor device manufacturing method includes: forming an organic film composed of a polymer having a urea bond in a recess by supplying amine and isocyanate to a surface of a substrate having the recess; performing a predetermined process on the substrate on which the organic film is formed in the recess; and removing the organic film in the recess by heating the substrate that has been subjected to the predetermined process to depolymerize the organic film. The amine and the isocyanate have a terminal bifunctional linear chain structure having two functional groups at both ends of a linear chain. At least one of the amine or the isocyanate has side chains connected to the linear chain contained in the linear chain structure.

Abstract: A heat treatment apparatus includes: an inner tube having a cylindrical shape and configured to accommodate a substrate; an outer tube configured to cover an outside of the inner tube; a heater provided around the outer tube; a gas supply pipe that extends along a longitudinal direction in the inner tube; an opening formed in a side wall of the inner tube facing the gas supply pipe; a temperature sensor provided at a position shifted by a predetermined angle from the opening in a circumferential direction of the inner tube; and a controller that controls the heater based on a detected value of the temperature sensor.

Abstract: A processing apparatus includes a processing chamber configured to accommodate a substrate, a furnace body, covering a periphery of the processing chamber, and configured to heat the substrate accommodated inside the processing chamber, a gas supply unit configured to supply a cooling gas to a temperature controlling space between the processing chamber and the furnace body, and a gas discharge unit configured to discharge the gas from the temperature controlling space. The gas discharge unit includes a plurality of exhaust holes configured to discharge the gas in the temperature controlling space, located at a plurality of positions along an axial direction of the furnace body in a sidewall of the furnace body.

Abstract: Provided are a water-absorbing agent composition of high quality (and stable quality) that can be produced without a decrease in productivity and is not colored even in a production process (or under production conditions) under high temperature conditions (under the condition of heating at 100° C. or higher), even when a polysaccharide is used as a sustainable raw material for at least part of the water-absorbing agent composition, and a method for producing the water-absorbing agent composition. The water-absorbing agent composition includes: a polyacrylic acid (salt)-based water-absorbing resin; a polysaccharide, and a reducing agent. The water-absorbing agent composition is surface-crosslinked, contains the polysaccharide in an amount of 10 mass% or more and contains the reducing agent in an amount of 10 ppm to 10000 ppm, and has a degree of coloration (YI value) of 60 or less.

Abstract: A film forming apparatus comprises: a processing chamber in which a substrate is accommodated; a gas supply configured to supply a gas containing a first monomer and a gas containing a second monomer into the processing chamber; a concentration distribution controller configured to control a gas flow within the processing chamber such that a concentration of a mixed gas including the gas containing the first monomer and the gas containing the second monomer on the substrate has a predetermined distribution; and a temperature distribution controller configured to control a temperature distribution of the substrate such that a temperature of a first region of the substrate is higher than a temperature of a second region of the substrate, the concentration of the mixed gas in a region corresponding to the first region being higher than the concentration of the mixed gas in a region corresponding to the second region.

Abstract: A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.

Abstract: A film forming system includes: a film forming apparatus which includes a processing container, a stage provided in the processing container, a structure provided in the processing container and having recesses, and a window provided on a wall surface of the processing container; a measurement device which includes a light emitter, a light receiver, and a measurer configured to measure a light reflectance for each wavelength in the structure based on an intensity of light emitted to the structure and an intensity of light reflected from the structure; and a control device which includes an estimator configured to estimate a thickness of a film formed on a substrate based on the light reflectance for each wavelength in the structure, and a controller configured to stop film formation on the substrate when the estimated thickness of the film reaches a predetermined thickness.

Abstract: A substrate processing apparatus including: a processing container; a stage installed in the processing container and configured to place a substrate thereon; a ceiling plate installed at a position facing the stage in the processing container; a driver configured to raise and lower the stage; an exhaust port formed in a side wall of the processing container and configured to exhaust a gas in the processing container; and a controller configured to control conductance of a space between the exhaust port and a processing space between the stage and the ceiling plate by controlling the driver to adjust a distance between a peripheral edge portion of the stage and a facing member disposed at a position facing the peripheral edge portion in the processing container.

Abstract: An object of the present invention is to provide a compound that can be used as a more superior therapeutic agent for central nervous system diseases.

Abstract: A film forming apparatus includes a stage on which a substrate is mounted, a first container configured to accommodate the stage, a gas supply configured to supply gases containing two types of monomers into the first container to form a polymer film on the substrate mounted on the stage, a porous member arranged radially outward from a processing space, which is a space above the substrate, and configured to draw in polymers formed by the gases containing two types of monomers exhausted from the first container, and a heater configured to heat the porous member to a first temperature when the polymer film is formed on the substrate.

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

Abstract: A heat treatment apparatus includes: a processing container extended in a vertical direction; and a heater provided to surround the processing container. The heater includes: a first insulator of a cylindrical shape that has a ceiling surface and an opening at a lower end; a heat generator provided along a circumferential direction on an inner circumferential side of the first insulating member; and a second insulator arranged along the circumferential direction of the first insulating member at a position adjacent to the heat generating elements.

Abstract: A method of forming a film is performed in a heat treatment apparatus that includes a processing container, a tubular member provided in the processing container, a heater configured to heat an inside of the processing container, and a gas supply. The method includes: providing a substrate in the tubular member; adjusting a temperature inside the tubular member by the heater; and after adjusting the temperature, supplying a gas containing a film-forming gas from the gas supply into the processing container to form a film on the substrate. In the adjusting the temperature, a gas containing a heat transfer gas is supplied from the gas supply into the processing container.

Abstract: A method of manufacturing a semiconductor device, includes forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate; performing a predetermined process on the substrate on which the sacrificial film is formed; and removing the sacrificial film by heating the substrate to depolymerize the polymer, wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.

Abstract: A control method of a film forming apparatus includes (a) acquiring a first temperature measured by a first temperature sensor in a tubular member in a processing container of the film forming apparatus; (b) calculating a first power to be output to a heating unit disposed in the processing container; (c) acquiring a second temperature measured by a second temperature sensor provided outside the tubular member in the processing container; (d) calculating a second power to be output to the heating unit; (e) calculating a predicted value of the second temperature at a predetermined time ahead, from the second temperature based on a prediction model; (f) outputting either the first power or the second power to the heating unit according to the predicted value of the second temperature; and (g) repeating (a) to (f) in a predetermined cycle.

Abstract: A heat treatment apparatus including: a cylindrical processing container; a heater configured to heat the processing container; and a cooler configured to cool the processing container, wherein the cooler includes: discharge holes provided at intervals in a longitudinal direction of the processing container, the discharge holes being configured to discharge a cooling medium toward the processing container; a branch configured to divide the cooling medium into a plurality of flowing paths that communicate with the discharge holes; and blowers provided for respective ones of the flowing paths, the blowers being configured to send the cooling medium to the discharge holes that communicate with the respective ones of the flowing paths.

Abstract: A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.