Abstract: An object of the present invention is to provide a hollow-fiber membrane which does not require a coating treatment with a cell adhesion factor or surface modification by an electron beam or the like and which is capable of adhering and culturing cells, and a method for culturing cells using the hollow-fiber membrane. A hollow-fiber membrane for cell culture which is to be used as a culture substrate for adhesive cells, in which the hollow-fiber membrane includes a hydrophobic polymer and a hydrophilic polymer, the content of the hydrophilic polymer in the whole hollow-fiber membrane is more than 0% by mass and less than 1% by mass, and the content of the hydrophilic polymer on a surface of the hollow-fiber membrane is more than 0% by mass and less than 10% by mass.

Abstract: A substrate processing apparatus for processing a substrate to manufacture a semiconductor device, includes: a mounting table on which a substrate is mounted; a first liquid supply part that supplies a first liquid to form a polymer film having a urea bond on the substrate mounted on the mounting table; a second liquid supply part that supplies a second liquid reacting with the first liquid; and a nozzle part provided at an end portion of a liquid flow path where the first liquid supplied from the first liquid supply part and the second liquid supplied from the second liquid supply part are joined with each other to obtain a mixed solution, and configured to supply the mixed solution to the substrate to form the polymer film on a surface of the substrate, wherein the polymer film is temporarily used for manufacturing the semiconductor device and is subsequently removed by depolymerization.

Abstract: Crystals of the compound represented by formula (1), a method for the production thereof, and a method for producing an antibody-drug conjugate using the crystals.

Abstract: A method of manufacturing a semiconductor device includes: forming a protective material composed of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate for manufacturing the semiconductor device, the protective material configured to protect a protection target layer provided in the substrate against a treatment to be performed on the substrate; subsequently performing the process on the substrate on which the protective material is formed; and subsequently removing the protective material by heating the substrate under a low oxygen atmosphere to depolymerize the polymer.

Abstract: A film forming method includes: accommodating a substrate in a processing container of a film forming apparatus; supplying an inert gas to the processing container at a flow rate equal to an average flow rate of a plurality of gases to be supplied into the processing container in a film forming process and maintaining a pressure of the processing container to be substantially same as an average pressure of the processing container in the film forming process; and alternately supplying the plurality of gases into the processing container and forming a film on the substrate.

Abstract: A control method includes: calculating a correction value after a predetermined process is executed; and controlling a control target based on an output value of at least one of a real sensor and a virtual sensor during execution of the predetermined process. The calculating includes correcting an output value of the virtual sensor. The controlling includes: controlling the control target based on an output value of the real sensor while monitoring a failure of the real sensor; correcting an output value of the virtual sensor with the correction value when the real sensor fails; and switching from a control based on the output value of the real sensor to a control based on the output value of the virtual sensor after the correcting the output value of the virtual sensor.

Abstract: A heat treatment apparatus includes: an inner tube having a cylindrical shape and configured to accommodate a substrate; an outer tube configured to cover an outside of the inner tube; a heater provided around the outer tube; a gas supply pipe that extends along a longitudinal direction in the inner tube; an opening formed in a side wall of the inner tube facing the gas supply pipe; a temperature sensor provided at a position shifted by a predetermined angle from the opening in a circumferential direction of the inner tube; and a controller that controls the heater based on a detected value of the temperature sensor.

Abstract: A composition for film deposition that includes a first component and a second component, wherein the second component polymerizes with the first component to form a nitrogen-containing carbonyl compound, and wherein desorption energy of at least one of the first component and the second component is two or more times greater than formation energy of the nitrogen-containing carbonyl compound, is provided.

Abstract: An etching method for etching a silicon-containing film formed in a substrate by supplying an etching gas to the substrate is provided. The method includes supplying an amine gas to the substrate, in which the silicon-containing film, a porous film, and a non-etching target film that is a film not to be etched but is etchable by the etching gas are sequentially formed adjacent to each other, so that amine is adsorbed onto walls of pores of the porous film. The method further includes supplying the etching gas for etching the silicon-containing film to the substrate in which the amine is adsorbed onto the walls of the pores of the porous film.

Abstract: There is provided a method of manufacturing a semiconductor device by performing a process on a substrate, comprising: forming a sacrificial film made of a polymer having a urea bond on a surface of the substrate by supplying a precursor for polymerization onto the surface of the substrate; subsequently, performing a step of changing a sectional shape of the sacrificial film and a step of adjusting a film thickness of the sacrificial film by heating the sacrificial film; subsequently, performing the process on the surface of the substrate; and subsequently, removing the sacrificial film.

Abstract: A substrate processing method includes: forming a coating film so as to cover a front surface of the substrate, the substrate having a recess formed in the front surface and in which an organic film is formed; heating the substrate to turn the organic film into a gas, removing the gas from an interior of the recess by causing the gas to pass through the coating film, and forming in the substrate a sealed space surrounded by the recess and the coating film; supplying a processing gas into the sealed space; and irradiating the substrate with a light to activate the processing gas in the sealed space, causing a reaction product gas to pass through the coating film, and removing the reaction product gas, wherein the reaction product gas is generated by a reaction between a residue of the organic film and the activated processing gas in the sealed space.

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

Abstract: There is provided a substrate processing apparatus including: a processing container having a vacuum atmosphere formed therein; a stage provided within the processing container and configured to place a substrate on the stage; a film-forming gas supply part configured to supply a film-forming gas for forming an organic film on the substrate placed on the stage; and a heating part configured to heat the substrate placed on the stage in a non-contact manner so as to remove a surface portion of the organic film.

Abstract: A method of manufacturing a semiconductor device, the method including: a first film deposition process of stacking a polymer film on a substrate on which a recess is formed, wherein the polymer film is a film of a polymer having a urea bond and is formed by polymerizing a plurality of kinds of monomers; a second film deposition process of stacking a sealing film on the substrate in a state in which at least a bottom and a sidewall of the recess are covered with the polymer film; and a desorbing process of desorbing and diffusing the polymer film under the sealing film through the sealing film by depolymerizing the polymer film by heating the substrate to a first temperature.

Abstract: A composition for film deposition that includes a first component and a second component, wherein the second component polymerizes with the first component to form a nitrogen-containing carbonyl compound, and wherein a molecular structure of the first component and a molecular structure of the second component are asymmetric with each other, is provided.

Abstract: In an input apparatus, under a state where contact of a manipulating body to a predetermined position on a manipulation surface is detected, a second low frictional force between the manipulation surface and the manipulating body is provided by vibrating the manipulation surface. The second low frictional force is smaller than a frictional force between the manipulation surface and the manipulating body when the manipulation surface is not vibrated. In response to determining the movement of the manipulating body from the predetermined position towards a target position on the manipulation surface, a first low frictional force between the manipulation surface and the manipulating body is provided by a predetermined time by vibrating the manipulation surface. The first low frictional force is smaller than the second low frictional force.

Abstract: There is provided a composite for film formation, including: a first component and a second component that are polymerized with each other to produce a urea compound, wherein at least one of the first component and the second component is a monofunctional compound.

Abstract: A method of manufacturing a semiconductor device by performing a process on a substrate includes: forming a protective layer made of a polymer having a urea bond by supplying a raw material for polymerization to a surface of a substrate on which a protected film to be protected is formed; forming a sealing film at a first temperature lower than a second temperature at which the polymer is depolymerized so cover a portion where the protective layer is exposed; subsequently, subjecting the substrate to a treatment at a third temperature equal to or higher than the second temperature at which the polymer as the protective layer is depolymerized; subsequently, performing a treatment which causes damage to the protected film when the protective layer is not present; and after the performing a treatment which causes damage to the protected film, depolymerizing the polymer by heating the substrate.

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate, which includes: embedding a polymer having a urea bond in a recess formed in the substrate by supplying a material for polymerization from above a sacrificial film to the substrate and forming a polymer film made of the polymer having the urea bond, wherein a surface of the substrate is covered with the sacrificial film, the recess including an opening of the sacrificial film that is formed by a patterning; removing the polymer film formed on the sacrificial film while leaving the polymer embedded in the recess; removing the sacrificial film in a state in which the polymer is embedded in the recess; and subsequently, removing the polymer embedded in the recess.

Abstract: There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.