Abstract: A method of manufacturing a semiconductor memory includes: forming a first lamination on a substrate; forming a first hole through the first lamination; embedding a first sacrificial material including a thermally decomposable organic material in the first hole; forming a recess at an upper portion of the first hole; forming an oxide film in the recess; removing the first sacrificial material under the oxide film; embedding a second sacrificial material on the oxide film in the recess; forming a second lamination on the first lamination and the second sacrificial material; forming a second hole through the second lamination at a position corresponding to the first hole by etching the second lamination in an extension direction of the first hole; and removing the oxide film and the second sacrificial material.

Abstract: A method for producing an antibody-drug conjugate in which a drug-linker represented by formula (1) (wherein A represents the connecting position to an antibody) is conjugated to the antibody via a thioether bond, wherein the method comprising the steps of: (i) reducing the antibody with a reducing agent; (ii) reacting a drug-linker intermediate with the antibody reduced in step (i); (iii) adding a reagent having a thiol group to react with the residual drug-linker intermediate in step (ii); and then (iv) removing by-products derived from the drug-linker intermediate through ultrafiltration using a buffer solution containing a salt consisting of a strong acid and a strong base, and a method for producing a pharmaceutical composition containing the antibody-drug conjugate.

Abstract: A heat treatment apparatus includes a heating unit provided around a processing container accommodating a substrate; a plurality of blowing units configured to blow a cooling medium into a space between the processing container and the heating unit; and a shutter configured to simultaneously opens/closes at least two of the plurality of blowing units and including a slit formed corresponding to each of the blowing units.

Abstract: A method of manufacturing a semiconductor device includes a first deposition process, a second deposition process, an oxidation process, and a desorption process. In the first deposition process, a thermally decomposable organic material on a substrate in which a recess is formed, is deposited. In the second deposition process, a metal layer is deposited on the organic material by sputtering, which uses a target containing metal. In the oxidation process, the metal layer is oxidized. In the desorption process, an air gap is formed between the oxidized metal layer and the recess by heating the substrate at a predetermined temperature to thermally decompose the organic material to desorb the organic material under the oxidized metal layer through the oxidized metal layer.

Abstract: Provided is a method of simply producing high-quality graphite oxide. The present invention relates to a method of producing a carbon material composite containing graphite oxide and at least one surfactant selected from the group consisting of a nonionic surfactant, a cationic surfactant, and an amphoteric surfactant, the method including: oxidizing graphite; mixing an aqueous dispersion obtained through the oxidizing, the aqueous dispersion containing graphite oxide dispersed therein, and the at least one surfactant selected from the group consisting of a nonionic surfactant, a cationic surfactant, and an amphoteric surfactant; and purifying the carbon material composite.

Abstract: In an input apparatus, under a state where contact of a manipulating body to a predetermined position on a manipulation surface is detected, a second low frictional force between the manipulation surface and the manipulating body is provided by vibrating the manipulation surface. The second low frictional force is smaller than a frictional force between the manipulation surface and the manipulating body when the manipulation surface is not vibrated. In response to determining the movement of the manipulating body from the predetermined position towards a target position on the manipulation surface, a first low frictional force between the manipulation surface and the manipulating body is provided by a predetermined time by vibrating the manipulation surface. The first low frictional force is smaller than the second low frictional force.

Abstract: There is provided a substrate processing apparatus including: a chamber in which a target substrate is accommodated; a first gas supply part configured to supply a gas containing a first monomer, and a gas containing a second monomer, which forms a polymer through a polymerization reaction with the first monomer, into the chamber so as to form a film of the polymer on the target substrate; an exhaust device configured to exhaust a gas inside the chamber; a first exhaust pipe configured to connect the chamber and the exhaust device; and an energy supply device configured to supply an energy with respect to a gas flowing through the first exhaust pipe so as to cause an unreacted component of at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in a molecular weight.

Abstract: There is provided a method of manufacturing a device, which comprises: a preparation step of preparing a workpiece having a recess formed therein; a burying step of burying a sacrificial material composed of a thermally decomposable organic material in the recess; a lamination step of laminating a preliminary sealing film on the sacrificial material buried in the recess; a first removal step of removing the sacrificial material in the recess through the preliminary sealing film, by annealing the workpiece at a first temperature and thermally decomposing the sacrificial material; a processing step of performing a predetermined process on a portion other than the recess in the workpiece, in a state in which the recess is covered with the preliminary sealing film; and a second removal step of removing the preliminary sealing film.

Abstract: There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.

Abstract: A semiconductor device manufacturing method includes laminating a thermally-decomposable organic material on a substrate having a recess formed therein, laminating a silicon nitride film on the organic material, and heating the substrate to a predetermined temperature so as to thermally decompose the organic material, and to desorb the organic material under the silicon nitride film through the silicon nitride film so as to form an air gap between the silicon nitride film and the recess. In laminating the silicon nitride film, the silicon nitride film is laminated on the organic material with microwave plasma in a state in which a temperature of the substrate is maintained at 200 degrees C. or lower.

Abstract: A method is provided. In the method, a substrate having a first region and a second region on a substrate surface is provided. A film deposition material to form a first chemical bond in the first region and a second chemical bond in the second region is supplied to the substrate surface. The second bond has a second bond energy lower than a first bond energy of the first chemical bond. A film is selectively formed in the first region by supplying an energy lower than the first bond energy of the first chemical bond and higher than the second bond energy of the second chemical bond.

Abstract: A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.

Abstract: An object of the present invention is to provide a compound that can be used as a more superior therapeutic agent for central nervous system diseases.

Abstract: A film forming apparatus includes: a film forming gas discharge part; an exhaust port; a rotation mechanism; a heating part configured to heat the interior of a reaction container to a temperature lower than a temperature of a film forming gas discharged from the film forming gas discharge part; first gas discharge holes opened, in the film forming gas discharge part, toward a gas temperature reducing member so that the film forming gas is cooled by colliding with the gas temperature reducing member inside the reaction container before the film forming gas is supplied to substrates; and second gas discharge holes opened, in the film forming gas discharge part, in a direction differing from an opening direction of the first gas discharge holes so that the film forming gas does not collide with the gas temperature reducing member before the film forming gas is supplied to the substrates.

Abstract: There is provided a method of manufacturing a semiconductor device, including: forming a polymer film, which is a film of a polymer having a urea bond generated by polymerization of plural types of monomers, around a plurality of structures provided on a substrate and including a first material; adjusting a shape of the polymer film; forming a temporary sealing film on the polymer film to cover the polymer film; and heating the polymer film to depolymerize the polymer into the plural types of monomers and desorb the plural types of depolymerized monomers through the temporary sealing film.

Abstract: A thermocouple structure according to one aspect of the present disclosure includes a first element wire, second element wires formed of a material different from the first element wire, an insulating covering member covering at least one of the first element wire and the second element wires, and a protective tube accommodating the first element wire and the second element wire. Each of the second element wires is bonded to a different position on the first element wire.

Abstract: An input device includes: a detector configured to detect an operation state of an operation body on an operation surface; a controller configured to execute an input control with respect to a predetermined instrument in accordance with the operation state of the operation body; and a drive portion configured to vibrate the operation surface. A selection position of the operation buttons on a display is correlated to a coordinate position of the operation body on the operation surface. The drive portion generates a predetermined vibration on the operation surface for a predetermined period in response to determining that the selection position of the operation buttons on the display is changed from one operation button to another operation button.

Abstract: There is provided a film forming apparatus including: a processing container whose interior is kept in a vacuum atmosphere; a stage provided within the processing container and configured to place a substrate thereon; a first film-forming gas supply part configured to supply a first film-forming gas for forming an organic film on a member within the processing container; a second film-forming gas supply part configured to supply a second film-forming gas for forming a film on the substrate; and a modifying gas supply part configured to supply a modifying gas for modifying the organic film and to suppress a film from being formed on a surface of the organic film by the second film-forming gas.

Abstract: A film forming apparatus comprises: a processing chamber in which a substrate is accommodated; a gas supply configured to supply a gas containing a first monomer and a gas containing a second monomer into the processing chamber; a concentration distribution controller configured to control a gas flow within the processing chamber such that a concentration of a mixed gas including the gas containing the first monomer and the gas containing the second monomer on the substrate has a predetermined distribution; and a temperature distribution controller configured to control a temperature distribution of the substrate such that a temperature of a first region of the substrate is higher than a temperature of a second region of the substrate, the concentration of the mixed gas in a region corresponding to the first region being higher than the concentration of the mixed gas in a region corresponding to the second region.

Abstract: A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.