Patents by Inventor Tetsuo Fujita

Tetsuo Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8465723
    Abstract: Provided is an arsenic-containing solid comprising 100 parts by mass of a scorodite-type iron-arsenic compound and at least 1 part by mass of an iron oxide compound added thereto, in which the scorodite-type iron-arsenic compound is produced by adding an oxidizing agent to an aqueous acidic solution that contains a 5-valent arsenic (V) ion and a 2-valent iron (II) ion, then promoting the precipitation of an iron-arsenic compound with stirring the liquid, and finishing the precipitation thereof within a range where the pH of the liquid is at most 1.2. The iron oxide compound includes goethite, hematite and their mixture, preferably having a BET specific surface area of at least 3 m2/g, more preferably at least 20 m2/g.
    Type: Grant
    Filed: March 13, 2008
    Date of Patent: June 18, 2013
    Assignee: Dowa Metals & Mining Co., Ltd.
    Inventors: Tetsuo Fujita, Ryoichi Taguchi, Hisashi Kubo
  • Patent number: 8411212
    Abstract: A touch electrode and a detection element are positioned in at least two of pixels. The touch electrode is formed in a first substrate, and is positioned so as to face a counter electrode. The touch electrode contacts the counter electrode and is electrically connected thereto when a second substrate is pressed and bent toward the first substrate. The detection element is connected to the touch electrode, and detects the electrical connection between the touch electrode and the counter electrode.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: April 2, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Dai Chiba, Takehiko Sakai, Tetsuo Fujita, Kazunori Morimoto, Yoshiharu Kataoka, Shogo Nishiwaki
  • Publication number: 20120307173
    Abstract: A method for fabricating a display device includes the steps of forming a multilayer structure in which a first conducting film and a second conducting film are stacked in this order, removing part of the second conducting film and forming a contact region in which the first conducting film does not overlap with the second conducting film, thereby forming the electrode portion from the multilayer structure, forming a planarized film made of a photosensitive material on the substrate on which the electrode portion is formed to cover the electrode portion, thereby forming a contact hole located inside the contact region and passing through the planarized film, and forming a pixel electrode on a surface of the planarized film to cover part of the first conducting film located inside the contact hole and exposed from the planarized film.
    Type: Application
    Filed: February 16, 2011
    Publication date: December 6, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Tetsuo Fujita, Yoshihito Hara, Yukinobu Nakata
  • Patent number: 8237896
    Abstract: An active matrix substrate (30) of the present invention includes (i) a plurality of TFT elements (2) provided on an insulating substrate (10), and (ii) pixel electrodes (7) electrically connected to the plurality of TFT elements (2), respectively. The pixel electrodes (7) has (i) a first transparent electrode layer (7a), (ii) a reflective electrode layer (7b) stacked on the first transparent electrode layer (7a), which reflective electrode layer (7b) has a smaller area than that of the first transparent electrode layer (7a), and (iii) a second transparent electrode layer (7c) stacked so as to cover at least the reflective electrode layer (7b). Hence, it is possible to realize a transflective liquid crystal display device which suppresses occurrence of a flicker, thereby having high display quality.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: August 7, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tetsuo Fujita, Yukinobu Nakata
  • Publication number: 20120127416
    Abstract: The present invention provides a liquid crystal display device having improved transmittance. The liquid crystal display device according to the present invention has a first substrate and a second substrate disposed to face each other, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes a pixel electrode to which a signal voltage is supplied and a common electrode to which a common voltage is supplied. The pixel electrode and the common electrode both comprise comb teeth. The comb teeth of the pixel electrode and the comb teeth of the common electrode are disposed with each other alternately via an interval. The liquid crystal layer contains liquid crystal molecules having positive dielectric anisotropy. The liquid crystal molecules are aligned in a direction orthogonal to a surface of the first substrate in a voltage non-application condition.
    Type: Application
    Filed: May 10, 2010
    Publication date: May 24, 2012
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Katsuhiko Morishita, Tsuyoshi Okazaki, Takehiko Sakai, Dai Chiba, Shingo Kawashima, Tetsuo Fujita, Miyuki Yonezawa
  • Patent number: 8147779
    Abstract: To provide a method of generating, with good reproducibility and ease and without complicated operations, scorodite which satisfies the elution standard (in accordance with Notification of No. 13 of Japanese Environment Agency) and which has good filterbility and stability for processing arsenic contained in a non-ferrous smelting intermediate, particularly, for processing a diarsenic trioxide form. A method of processing diarsenic trioxide, including: a leaching step of adding water and alkali to a non-ferrous smelting intermediate that contains diarsenic trioxide to produce slurry, heating the slurry, and leaching arsenic; a solution adjusting step of adding an oxidizing agent to the leachate to oxidize trivalent arsenic to pentavalent arsenic so as to obtain an adjusted solution; and a crystallizing step of converting arsenic in the adjusted solution to scorodite crystal.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: April 3, 2012
    Assignee: Dowa Metals & Minning Co., Ltd.
    Inventors: Mitsuo Abuyima, Yusuke Sato, Hironobu Mikami, Masami Oouchi, Tetsuo Fujita, Masayoshi Matsumoto
  • Publication number: 20120069282
    Abstract: The present invention provides a liquid crystal display device capable of reducing a white tinge phenomenon in a vertical alignment mode having at least a pair of comb-shaped electrodes. The present invention provides a liquid crystal display device including a pair of substrates disposed opposite each other, and a liquid crystal layer sandwiched between the pair of substrates, wherein one of the pair of substrates includes a pair of comb-shaped electrodes, the pair of electrodes are disposed opposite each other planarly within a pixel, the liquid crystal layer contains p-type nematic liquid crystal and is driven by an electric field generated between the pair of electrodes, the p-type nematic liquid crystal is vertically aligned relative to surfaces of the pair of substrates when no voltage is applied, and two or more regions differing from each other in an interval between the pair of electrodes are formed within the pixel.
    Type: Application
    Filed: April 20, 2010
    Publication date: March 22, 2012
    Inventors: Tsuyoshi Okazaki, Takehiko Sakai, Katsuhiko Morishita, Shingo Kawashima, Dai Chiba, Tetsuo Fujita
  • Publication number: 20120062451
    Abstract: The present invention provides a liquid crystal display device that allows suppressing loss of display quality caused by additional capacitance. The present invention provides a liquid crystal display device provided with a first substrate and a second substrate disposed opposing each other, and a liquid crystal layer sandwiched between the first substrate and the second substrate, wherein the first substrate has a gate bus line, a source bus line, a pixel electrode to which an image signal is inputted, and a common electrode to which a common signal is inputted, the pixel electrode and the common electrode are comb-shaped within a pixel, an electric field parallel to the surface of the first substrate is generated between the pixel electrode and the common electrode within the pixel, and the common electrode is arranged, within a display area, at a layer that is different from a layer at which the gate bus line is formed and from a layer at which the source bus line is formed.
    Type: Application
    Filed: April 20, 2010
    Publication date: March 15, 2012
    Inventors: Katsuhiko Morishita, Tsuyoshi Okazaki, Takenhiko Sakai, Dai Chiba, Tetsuo Fujita, Kazunori Morimoto
  • Publication number: 20120057118
    Abstract: Provided is a liquid crystal display device in which transmittance can be enhanced. The present invention provides a liquid crystal display device provided with a pair of substrates and a liquid crystal layer sandwiched between the pair of substrates. One of the substrates has a comb-shaped first electrode and a comb-shaped second electrode. The first electrode includes a first trunk portion and a first branch portion obliquely connected to the first trunk portion. The second electrode includes a second trunk portion and a second branch portion obliquely connected to the second trunk portion. The liquid crystal layer includes a p-type nematic liquid crystal that is vertically aligned with respect to the surfaces of the substrates when no voltage is applied. Each pixel has a blank portion of the second electrode having an acute angle-shaped blank portion and an obtuse angle-shaped blank portion that are mutually adjacent.
    Type: Application
    Filed: April 20, 2010
    Publication date: March 8, 2012
    Inventors: Katsuhiko Morishita, Tsuyoshi Okazaki, Takehiko Sakai, Dai Chiba, Tetsuo Fujita, Shingo Kawashima
  • Publication number: 20120050246
    Abstract: The present invention provides a liquid crystal display device which can suppress generation of a locally luminous part where a dark line disappears.
    Type: Application
    Filed: February 18, 2010
    Publication date: March 1, 2012
    Inventors: Kazunori Morimoto, Takehiko Sakai, Tetsuo Fujita, Dai Chiba, Katsuhiko Morishita, Tsuyoshi Okazaki
  • Patent number: 8125595
    Abstract: A difference of work functions in different metal thin films is suppressed without causing the increase of the manufacturing steps or the decrease of the optical performance. In a semi-transmissive reflective liquid crystal display apparatus 1 including a reflective electrode 62 and a transmissive electrode 63 in the pixel electrode 64, the surface of the reflective electrode 62 is subject to a plasma treatment, so that the work function of the reflective electrode 62 is controlled by changing by a value of 0.1 eV from the original value. Thus, it is possible to place the work function of the reflective electrode 62 within a difference of ±0.2 eV with respect to the work function of the transmissive electrode 63. As a result, a number of the manufacturing steps is not increased or no optical performance is decreased, unlike conventional liquid crystal display apparatuses.
    Type: Grant
    Filed: February 23, 2006
    Date of Patent: February 28, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Tetsuo Fujita, Masafumi Kokura, Mitsunori Harada, Hijiri Nakahara, Yoshiharu Kataoka
  • Patent number: 8110162
    Abstract: Provided is a method of easily producing scorodite which is stable and has excellent filtering properties with excellent reproducibility and without using complex operations, when processing arsenic that is included in non-ferrous smelting intermediates, and particularly when processing copper arsenic compounds in the form of an intermetallic compound. Scorodite is produced by a leaching step of leaching arsenic from a non-ferrous melting intermediate containing a copper arsenic compound in the form of an intermetallic compound in the presence of a sulfidizing agent and an oxidizing agent, a solution adjusting step of oxidizing trivalent arsenic to pentavalent arsenic by adding the oxidizing agent to the leaching solution, and a crystallizing step of converting the arsenic in the adjusted solution to scorodite crystals.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: February 7, 2012
    Assignee: Dowa Metals & Mining Co., Ltd.
    Inventors: Mitsuo Abumiya, Yusuke Sato, Hironobu Mikami, Masami Oouchi, Tetsuo Fujita, Masayoshi Matsumoto
  • Patent number: 8097228
    Abstract: To provide a method of generating, with good reproducibility and ease and without complicated operations, scorodite which satisfies the elution standard (in accordance with Notification of No. 13 of Japanese Environment Agency) and which has good filterbility and stability for processing arsenic contained in a diarsenic trioxide form. A method of processing diarsenic trioxide, including: a leaching step of adding water to diarsenic trioxide to produce slurry, heating the slurry, and leaching arsenic while adding an oxidant to obtain leachate; a deoxidization step of removing the oxidant so as to obtain an adjusted solution; and a crystallizing step of converting arsenic in the adjusted solution to scorodite crystal.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: January 17, 2012
    Assignee: Dowa Metals and Mining Co., Ltd.
    Inventors: Mitsuo Abumiya, Yusuke Sato, Hironobu Mikami, Masami Oouchi, Tetsuo Fujita, Masayoshi Matsumoto
  • Patent number: 8092764
    Abstract: Provided is a method of easily producing easily-filterable and stable scorodite that meets the leaching standard (conformance to Japanese Environmental Agency Notice 13) with excellent reproducibility and without using complex operations, when processing arsenic that is included in non-ferrous smelting intermediates, and particularly when processing arsenic in the form of a sulfide. Scorodite is produced by a leaching step of leaching arsenic from a non-ferrous melting intermediate containing arsenic in the weakly acid region, a solution adjusting step of oxidizing trivalent arsenic to pentavalent arsenic by adding an oxidizing agent to the leaching solution, and a crystallizing step of converting the arsenic in the adjusted solution to scorodite crystals.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: January 10, 2012
    Assignee: Dowa Metals and Mining Co., Ltd.
    Inventors: Mitsuo Abumiya, Yusuke Sato, Hironobu Mikami, Masami Oouchi, Tetsuo Fujita, Masayoshi Matsumoto
  • Patent number: 8092765
    Abstract: To extract arsenic from intermediates containing arsenic, to outside the system in stable form. A method of processing non-ferrous smelting intermediate containing arsenic in sulfide form and a non-ferrous smelting intermediate containing arsenic and copper as metal; a solution adjusting step of adding an oxidation agent to the leaching solution to oxidize trivalent arsenic to pentavalent arsenic and obtain an adjusting solution; and a crystallization step of converting arsenic in the adjusted solution to scorodite crystals.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: January 10, 2012
    Assignee: Dowa Metals and Mining Co., Ltd.
    Inventors: Mitsuo Abumiya, Yusuke Sato, Hironobu Mikami, Masami Oouchi, Tetsuo Fujita, Masayoshi Matsumoto
  • Patent number: 8075868
    Abstract: There is provided an iron arsenate powder which is produced from an arsenic containing solution and wherein the concentration of arsenic eluted or released from the powder is very low. The iron arsenate powder is a powder of dihydrate of iron arsenate, which has a crystal structure of rhombic system and which has lattice constants of a=0.8950 to 0.8956 nm, b=1.0321 to 1.0326 nm and c=1.0042 to 1.0050 nm at room temperatures and atmospheric pressure. The iron arsenate powder can be produced by a method comprising the steps of: adding ferrous ions to an arsenic containing solution to cause the molar ratio (Fe/As) of iron to arsenic in the solution to be not lower than 1; adding an oxidizing agent to the solution; heating the solution to a temperature of not lower than 70° C. while stirring the solution, to allow a reaction; and carrying out a solid-liquid separation to wash the obtained solid part.
    Type: Grant
    Filed: August 22, 2008
    Date of Patent: December 13, 2011
    Assignees: Dowa Metals & Mining Co., Ltd., Tohoku University
    Inventors: Tetsuo Fujita, Takashi Nakamura, Shigeru Suzuki, Kozo Shinoda
  • Publication number: 20110141413
    Abstract: A liquid crystal display panel (50a) including: an active matrix substrate (20a) including a plurality of light-reflecting lines (11), an insulating film (16) provided so as to cover the lines (11), and a plurality of pixel electrodes (19) provided in a matrix pattern on the insulating film (16); a counter substrate (30a) placed opposing the active matrix substrate (20a) and including a plurality of colored layers (22) provided in a matrix pattern so as to respectively overlap the pixel electrodes (19), and a black matrix (21a) provided between the colored layers (22); and a liquid crystal layer (40) provided between the active matrix substrate (20a) and the counter substrate (30a), wherein at least one of the black matrix (21a) and the lines (11) has a raised/recessed portion (C) whose surface is formed in a raised/recessed shape.
    Type: Application
    Filed: June 22, 2009
    Publication date: June 16, 2011
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Takehiko Sakai, Dai Chiba, Yoshiharu Kataoka, Tetsuo Fujita, Kazunori Morimoto
  • Patent number: 7961280
    Abstract: In a semi-transmissive liquid crystal display device (50a) including an active matrix substrate (20a), the active matrix substrate (20a) includes a plurality of source lines (2), a first transparent electrode (2c) connected to each source line (2) through a TFT (5), an interlayer insulating film (12) provided on the first transparent electrode (2c) and having an opening (12a), a reflective electrode (6) provided on the interlayer insulating film (12) and connected to the first transparent electrode (2c) through the opening (12a), and a second transparent electrode (7a) overlapping the reflective electrode (6a) and the first transparent electrode (2c) and connected to the reflective electrode (6a) and the first transparent electrode (2c). In each pixel, respective outer peripheral ends (E) of the reflective electrode (6a) and the second transparent electrode (7a) are aligned with each other.
    Type: Grant
    Filed: January 9, 2007
    Date of Patent: June 14, 2011
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazuyoshi Fujioka, Masaaki Saitoh, Toshiyuki Tanaka, Masakatsu Tominaga, Tetsuo Fujita, Yuji Suehiro, Hijiri Nakahara, Kazuhiro Yoshikawa
  • Publication number: 20110122361
    Abstract: The present invention provides a substrate for a display device and a liquid crystal display device, which are capable of preventing a reflective layer from being damaged in a resist separation step for patterning the reflective layer. The present invention is a substrate for a display device provided with a reflective layer in a display region, comprising: a pattern film that is disposed outside the display region except a terminal region and on the same side as a side of the reflective layer, the pattern film including either one of a material that has the same ionizability as a material of the reflective layer and a material that has higher ionizability than the material of the reflective layer.
    Type: Application
    Filed: April 14, 2009
    Publication date: May 26, 2011
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Tetsuo Fujita, Takehiko Sakai, Dai Chiba, Kazunori Morimoto, Yoshiharu Kataoka
  • Publication number: 20110102359
    Abstract: A touch electrode and a detection element are positioned in at least two of pixels. The touch electrode is formed in a first substrate, and is positioned so as to face a counter electrode. The touch electrode contacts the counter electrode and is electrically connected thereto when a second substrate is pressed and bent toward the first substrate. The detection element is connected to the touch electrode, and detects the electrical connection between the touch electrode and the counter electrode.
    Type: Application
    Filed: May 29, 2009
    Publication date: May 5, 2011
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Dai Chiba, Takehiko Sakai, Tetsuo Fujita, Kazunori Morimoto, Yoshiharu Kataoka, Shogo Nishiwaki