Patents by Inventor Theodore Letavic

Theodore Letavic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6028337
    Abstract: A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral MOS device on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and over at least a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region.
    Type: Grant
    Filed: November 6, 1998
    Date of Patent: February 22, 2000
    Assignee: Philips North America Corporation
    Inventors: Theodore Letavic, Mark Simpson
  • Patent number: 6023090
    Abstract: A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral MOS device on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and over at least a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region.
    Type: Grant
    Filed: December 7, 1998
    Date of Patent: February 8, 2000
    Assignee: Philips Electronics North America, Corporation
    Inventors: Theodore Letavic, Mark Simpson
  • Patent number: 5973341
    Abstract: A lateral thin-film Silicon-On-Insulator (SOI) JFET device includes a semiconductor substrate, a buried insulating on the substrate, and a JFET device in a thin semiconductor layer of a first conductivity type on the buried insulating layer. The device includes a source region of the first conductivity type, a control region of a second conductivity type which is laterally spaced apart from the source region and a lateral drift region of the first conductivity type adjacent to the control region. A drain region of the first conductivity type is provided laterally spaced apart from the control region in a first lateral direction by the lateral drift region, and at least one field plate electrode is provided over at least a major portion of the lateral drift region and is insulated from the drift region by an insulation region.
    Type: Grant
    Filed: December 14, 1998
    Date of Patent: October 26, 1999
    Assignee: Philips Electronics North America Corporation
    Inventors: Theodore Letavic, Erik Peters, Rene Zingg
  • Patent number: 5969387
    Abstract: A lateral thin-film Silicon-On-Insulator (SOI) device includes a lateral semiconductor device such as a diode or MOSFET provided in a thin semiconductor film on a thin buried oxide. The lateral semiconductor device structure includes at least two semiconductor regions separated by a lateral drift region. A top oxide insulating layer is provided over the thin semiconductor film and a conductive field plate is provided on the top oxide insulating layer. In order to provide enhanced device performance, a portion of the top oxide layer increases in thickness in a substantially continuous manner, while a portion of the lateral drift region beneath the top oxide layer decreases in thickness in a substantially continuous manner, both over a distance which is at least about a factor of five greater than the maximum thickness of the thin semiconductor film.
    Type: Grant
    Filed: June 19, 1998
    Date of Patent: October 19, 1999
    Assignee: Philips Electronics North America Corporation
    Inventors: Theodore Letavic, Mark Simpson