Abstract: A gas injector assembly and a substrate processing apparatus comprising the gas injector assembly is disclosed. Embodiments of the presently described gas injector assembly comprise a gas injector, a first precursor gas supply conduit and a second precursor gas supply conduit. A size of the first precursor gas supply conduit is larger than the size of the second precursor gas supply conduit.

Abstract: A vapor phase precursor delivery system for delivering a vapor phase precursor for depositing a layer in a vapor phase deposition apparatus is disclosed. The vapor phase precursor delivery system having: a gas outlet; a gas inlet; a vessel constructed and arranged for storing a precursor; and a connecting tube contained within the vessel. The connecting tube may be connected to and in fluid communication with the gas inlet. A vapor phase deposition apparatus, such as for example a vertical furnace may have such a vapor phase precursor delivery system for depositing a layer on a substrate.

Abstract: Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

Abstract: A method and system for depositing a material on one or more substrates by atomic layer deposition. The method comprising a step of performing a pulse (1) of a precursor of said material, wherein at least one of the average flow rate (f) and the average partial pressure (r) of said precursor over a first half (2) of the pulse (1) is higher than over a second half (3) of the pulse (1).

Abstract: A substrate processing apparatus configured to from a layer on a plurality of substrates is disclosed. Embodiments of the presently described substrate processing apparatus comprise a process chamber. The process chamber comprises process space for receiving a substrate boat arranged for holding the plurality of substrates. The substrate processing apparatus further comprise a gas delivery assembly comprising at least one gas injector; a gas exhaust assembly comprising two gas outlets. The two gas outlets are positioned at a distance on either side of the at least one gas injector.

Abstract: A wafer boat configured to be placed on a pedestal of a vertical batch furnace, the pedestal having a substantially flat support surface. The wafer boat comprises a support ring defining a substantially flat bottom end surface of the wafer boat, and an alignment ring substantially concentric with the support ring. Either the support surface of the pedestal, or a bottom side of the alignment ring is provided with a plurality of alignment elements respectively protruding upwards from the support surface or downwards from the alignment ring, while the other one is provided with a plurality of alignment openings configured to accommodate therein the plurality of alignment elements. The support ring downwardly protrudes beyond the alignment ring so that, when the wafer boat is placed on the pedestal, the support ring is supported on the support surface while the alignment ring is spaced from the support surface of the pedestal.

Abstract: Temperature control systems and methods for a thermal reactor having a process chamber, the control system comprising a first control loop comprising a first Model-Based Predictive Controller (MBPC) and a second control loop comprising a second MBPC, wherein the first and second MBPC are provided with predictive models representing the behavior of the thermal reactor.

Abstract: A semiconductor processing apparatus for processing a plurality of substrates is provided. In a preferred embodiment, the apparatus comprises a reaction chamber. The reaction chamber comprises a reaction space for receiving a substrate boat constructed and arranged for holding the plurality of substrates. The rection chamber further comprise a gas distributor for providing gas into the reaction space and a gas exhaust for removing gas from the reaction space. The boat, the gas distributor and the gas exhaust are constructed and arranged to at least partially enclose the substrates in the boat and to form a gas flow path, in use, from the gas distributor to the gas exhaust, wherein the gas flow path is substantially being directed in between the substrates.

Abstract: A vertical batch furnace assembly for processing wafers having a cassette handling space, a wafer handling space, and a first wall and separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which, at a side of the first wall which is directed to the cassette handling space, a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage having a plurality of cassette storage positions and a cassette handler configured to transfer wafer cassettes between the cassette storage positions and the wafer transfer position. The cassette handler has a first cassette handler arm and a second cassette handler arm.

Abstract: A semiconductor substrate processing apparatus, comprising a processing chamber, a wafer boat and a plurality of wafer supports. The wafer boat is configured to accommodate a plurality of wafers and is receivable in the processing chamber for depositing a layer on each wafer. The wafer boat comprises at least two wafer boat posts, wherein each wafer boat post comprises a plurality of slots. Each wafer support comprises a support area configured to support at least a circumferential edge of a wafer, and a flange circumferentially surrounding the support area. The flange is receivable in and supported by the slots and has a width to create a distance between the circumferential edge of the wafer and the wafer boat posts. The distance is such that the wafer boat posts do substantially not influence a layer thickness of the layer which is deposited on the wafer during processing of the wafer.

Abstract: A vertical furnace and a method for forming a semiconductor structure comprising a film is provided. In a preferred embodiment, this vertical furnace comprises an inner enclosure defining a process space and an opening. This process space extends in a vertical direction and the opening is for receiving a plurality of wafers. This vertical furnace comprises an outer enclosure that surrounds the inner enclosure. Furthermore, it comprises a gas injector for injecting a process gas into the process space. It also comprises an exhaust gas outlet for exhausting the process space. This vertical furnace is provided with a lamp for heating the plurality of wafers. This lamp is arranged circumferentially in an interior space between the inner enclosure and the outer enclosure. This vertical furnace further comprises a cooling inlet for providing a cooling fluid into the interior space to cool the interior space.

Abstract: The present disclosure relates to a gas injector for injecting a process gas in a process chamber. The gas injector comprises an injector tube comprising a plurality of process gas injection holes spaced apart from one another to deliver the process gas in the process chamber. The gas injector also comprises a feed entry of the injector tube for injecting the process gas into the injector tube and a mixing chamber is provided and is configured to mix a first reactant gas and a second reactant gas, thereby forming the process gas. The mixing chamber is directly connected to the feed entry and has first and second inlets for letting the first and second reactant gas in the mixing chamber. The first and second inlets are facing each other to improve mixing in the mixing chamber of the first and second reactant gas.

Abstract: A vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and a first wall separating the cassette handling space from the wafer handling space. The wall having a wafer transfer opening. The wafer transfer opening is associated with a cassette carrousel comprising a carrousel stage having a plurality of cassette support surfaces each configured for supporting a wafer cassette. The carrousel stage is rotatable by an actuator around a substantially vertical axis to transfer each cassette support surface to a wafer transfer position in front of the wafer transfer opening and to at least one cassette load/retrieve position, wherein the vertical batch furnace assembly is configured to load or retrieve a wafer cassette on or from a cassette support surface of the carrousel stage which is in the at least one load/retrieve position.

Abstract: A vertical batch furnace assembly for processing wafers having a cassette handling space, a wafer handling space, and a first wall and separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which, at a side of the first wall which is directed to the cassette handling space, a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage having a plurality of cassette storage positions and a cassette handler configured to transfer wafer cassettes between the cassette storage positions and the wafer transfer position. The cassette handler has a first cassette handler arm and a second cassette handler arm.

Abstract: An apparatus 1 for processing a plurality of substrates 3 is provided. The apparatus may have a process tube 5 creating a process chamber 7; a heater 9 surrounding the process tube 5; a flange 11 for supporting the process tube; and a door 15 configured to support a wafer boat 17 with a plurality of substrates 3 in the process chamber and to seal the process chamber 7. An exhaust operably connected to the process chamber 7 may be provided to remove gas from the process chamber via a first exhaust duct 19. The apparatus may be provided with an extractor chamber 21 surrounding the first exhaust duct where it connects to the process chamber and connected to a second exhaust duct 23 to remove gas from the extractor chamber.

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace having a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with a plurality of vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the processing chamber.

Abstract: Cassette lid opening device for a semiconductor substrate processing apparatus comprising a housing, a door assembly, a transport mechanism, and at least one suspension. The housing has at least one wall with an associated wall opening. The door assembly comprises at least one door plate configured for substantially closing off the associated wall opening of the at least one wall. The transport mechanism includes a carriage which is connected to the door assembly and configured to transport the door assembly parallel to the at least one wall. The at least one suspension is arranged between the at least one door plate and the transport mechanism. The at least one suspension comprises a suspension spring assembly which allows movement of the at least one door plate in a direction perpendicular to the at least one wall.

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films, is discloses. The furnace comprising a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector is provided inside the process chamber extending in a substantially vertical direction over substantially a wafer boat height and comprising a feed end connected to a source of a silicon precursor and a source of a nitrogen precursor and a plurality of vertically spaced gas injection holes to provide gas from the feed end to the process chamber. The furnace may comprise a purge gas injection system to provide a purge gas into the process chamber near a lower end of the process chamber.

Abstract: Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

Abstract: A vertical batch furnace assembly for processing wafers having a cassette handling space, a wafer handling space, and a first wall and separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which, at a side of the first wall which is directed to the cassette handling space, a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage having a plurality of cassette storage positions and a cassette handler configured to transfer wafer cassettes between the cassette storage positions and the wafer transfer position. The cassette handler has a first cassette handler arm and a second cassette handler arm.