Abstract: A semiconductor processing apparatus (1), comprising: a gas supply system (2), comprising at least one gas supply unit (100) including: a process gas source (110); a gas distribution manifold (150), including an annular gas distribution conduit (152) provided with an inlet (154) and a plurality of valved outlets (156a-c); a gas supply conduit (130, 132) fluidly connecting the process gas source (110) to the inlet (154) of the gas distribution manifold (150); a plurality of reactors (4a-c), each fluidly connected to a respective valved outlet (156a-c) of the gas distribution manifold (150), such that process gas from the process gas source (110) of the at least one gas supply unit (100) is selectively suppliable to a respective reactor of said plurality of reactors (4a-c) via the gas supply conduit (130, 132), the gas distribution manifold (150), and a respective valved outlet (156a-c).

Abstract: A wafer boat for accommodating semiconductor wafers comprises two side rods and at least one back rod, the rods being vertically oriented and extending between a top member and a bottom member. The rods comprise vertically spaced recesses formed at corresponding heights, recesses at the same height defining a wafer accommodation for receiving and supporting a wafer in a substantially horizontal orientation, the recesses having an improved shape. The upwardly facing surfaces of the recesses comprise a first flat surface in an inward region of the recess which is horizontal or inclined upward in an outward direction of the recess and a second flat surface in an outer region of the recess which is inclined downward in an outward direction of the recess. The intersection of the first and second surface forming an edge for supporting the wafer. The recesses are easy to machine and prevent damage to the wafer.

Abstract: Disclosed is a modular semiconductor substrate processing system (1), including a plurality of independently operable substrate processing units (100). Each unit (100) comprises a reactor module (104) and a substrate transfer module (102). Within the system (1), the substrate transfer modules (102) of the different units (100) are serially interconnected such that substrates (116) may be exchanged between them. Exchange of substrates (116) between neighboring processing units (100) is facilitated by a shared substrate hand-off station (130) that is associated with each pair of neighboring processing units. The actual transfer of substrates is performed by a substrate handling robot (122), which may preferably be of the SCARA-type.

Abstract: A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

Abstract: Disclosed is a bubbler assembly. The bubbler assembly includes a vessel configured to contain a liquid source material and its vapor. It also includes a carrier gas supply line, a downstream end of which discharges in a lower portion of the vessel, and a gas outlet line, an upstream end of which is in fluid communication with an upper portion of the vessel. The gas outlet line includes a constriction. The bubbler assembly further includes a pressurizing gas supply line, a downstream end of which discharges in either the upper portion of the vessel or in the gas outlet line at a point upstream of the constriction.

Abstract: A method is disclosed that uses solid precursors for semiconductor processing. A solid precursor is provided in a storage container. The solid precursor is transformed into a liquid state in the storage container. The liquid state precursor is transported from the storage container to a liquid holding container. The liquid state precursor is transported from the liquid holding container to a reaction chamber. The molten precursor allows the precursor to be metered in the liquid state. The storage container can be heated only when necessary to replenish the liquid holding container, thereby reducing the possibility of thermal decomposition of the precursor.

Abstract: Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the chamber and exit from the opposite end. Successive gases entering the chamber are selected so that a stable interface with the immediately preceding gas can be maintained. For example, when the gases are fed into the chamber at the chamber's top end and are exhausted at the bottom end, the gases are chosen with successively lower molecular weights. In effect, each gas atmosphere stays on top of and pushes the previous gas atmosphere out of the chamber from the top down. Advantageously, the gases can be more effectively and completely removed from the chamber.

Abstract: A method is disclosed that uses solid precursors for semiconductor processing. A solid precursor is provided in a storage container. The solid precursor is transformed into a liquid state in the storage container. The liquid state precursor is transported from the storage container to a liquid holding container. The liquid state precursor is transported from the liquid holding container to a reaction chamber. The molten precursor allows the precursor to be metered in the liquid state. The storage container can be heated only when necessary to replenish the liquid holding container, thereby reducing the possibility of thermal decomposition of the precursor.

Abstract: Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the chamber and exit from the opposite end. Successive gases entering the chamber are selected so that a stable interface with the immediately preceding gas can be maintained. For example, when the gases are fed into the chamber at the chamber's top end and are exhausted at the bottom end, the gases are chosen with successively lower molecular weights. In effect, each gas atmosphere stays on top of and pushes the previous gas atmosphere out of the chamber from the top down. Advantageously, the gases can be more effectively and completely removed from the chamber.