Patents by Inventor Thomas Gehrke
Thomas Gehrke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128396Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.Type: ApplicationFiled: December 11, 2023Publication date: April 18, 2024Inventors: Zaiyuan Ren, Thomas Gehrke
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Patent number: 11843072Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.Type: GrantFiled: June 28, 2021Date of Patent: December 12, 2023Assignee: Micron Technology, Inc.Inventors: Zaiyuan Ren, Thomas Gehrke
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Publication number: 20210328094Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.Type: ApplicationFiled: June 28, 2021Publication date: October 21, 2021Inventors: Zaiyuan Ren, Thomas Gehrke
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Patent number: 11049994Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.Type: GrantFiled: June 23, 2017Date of Patent: June 29, 2021Assignee: Micron Technology, Inc.Inventors: Zaiyuan Ren, Thomas Gehrke
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Publication number: 20210184079Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.Type: ApplicationFiled: February 12, 2021Publication date: June 17, 2021Inventors: Scott D. Schellhammer, Scott E. Sills, Lifang Xu, Thomas Gehrke, Zaiyuan Ren, Anton J. De Villiers
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Patent number: 10923627Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.Type: GrantFiled: August 17, 2017Date of Patent: February 16, 2021Assignee: Micron Technology, Inc.Inventors: Scott D. Schellhammer, Scott E. Sills, Lifang Xu, Thomas Gehrke, Zaiyuan Ren, Anton J. De Villiers
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Publication number: 20200243651Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: December 21, 2018Publication date: July 30, 2020Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Patent number: 10431714Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.Type: GrantFiled: February 5, 2016Date of Patent: October 1, 2019Assignee: Qromis, Inc.Inventors: Martin F. Schubert, Cem Basceri, Vladimir Odnoblyudov, Casey Kurth, Thomas Gehrke
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Publication number: 20190229190Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: December 21, 2018Publication date: July 25, 2019Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Publication number: 20190214468Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.Type: ApplicationFiled: December 4, 2018Publication date: July 11, 2019Applicant: MACOM Technology Solutions Holdings, Inc.Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
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Patent number: 10177229Abstract: A semiconductor material includes a compositionally-graded transition layer, an intermediate later and a gallium nitride material layer. The compositionally-graded transition layer has a back surface and a top surface, and includes a gallium nitride alloy. The gallium concentration in the compositionally-graded transition layer increases from the back surface to the front surface. The intermediate layer is formed under the compositionally-graded transition layer. The gallium nitride material layer is formed over the compositionally-graded transition layer, and has a crack level of less than 0.005 ?m/?m2.Type: GrantFiled: August 18, 2016Date of Patent: January 8, 2019Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
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Patent number: 10147727Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.Type: GrantFiled: February 13, 2018Date of Patent: December 4, 2018Assignee: Micron Technology, Inc.Inventors: Jaydeb Goswami, Zailong Bian, Yushi Hu, Eric R. Blomiley, Jaydip Guha, Thomas Gehrke
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Publication number: 20180175039Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.Type: ApplicationFiled: February 13, 2018Publication date: June 21, 2018Applicant: Micron Technology, Inc.Inventors: Jaydeb Goswami, Zailong Bian, Yushi Hu, Eric R. Blomiley, Jaydip Guha, Thomas Gehrke
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Publication number: 20180138182Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.Type: ApplicationFiled: November 11, 2016Publication date: May 17, 2018Inventors: Jaydeb Goswami, Zailong Bian, Yushi Hu, Eric R. Blomiley, Jaydip Guha, Thomas Gehrke
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Patent number: 9972628Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.Type: GrantFiled: November 11, 2016Date of Patent: May 15, 2018Assignee: Micron Technology, Inc.Inventors: Jaydeb Goswami, Zailong Bian, Yushi Hu, Eric R. Blomiley, Jaydip Guha, Thomas Gehrke
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Publication number: 20170345972Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.Type: ApplicationFiled: August 17, 2017Publication date: November 30, 2017Inventors: Scott D. Schellhammer, Scott E. Sills, Lifang Xu, Thomas Gehrke, Zaiyuan Ren, Anton J. De Villiers
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Publication number: 20170288089Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.Type: ApplicationFiled: June 23, 2017Publication date: October 5, 2017Inventors: Zaiyuan Ren, Thomas Gehrke
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Patent number: 9748442Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.Type: GrantFiled: October 9, 2014Date of Patent: August 29, 2017Assignee: Micron Technology, Inc.Inventors: Scott D. Schellhammer, Scott E. Sills, Lifang Xu, Thomas Gehrke, Zaiyuan Ren, Anton J. De Villiers
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Patent number: 9705028Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.Type: GrantFiled: February 26, 2010Date of Patent: July 11, 2017Assignee: Micron Technology, Inc.Inventors: Zaiyuan Ren, Thomas Gehrke
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Publication number: 20170104126Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.Type: ApplicationFiled: December 20, 2016Publication date: April 13, 2017Inventors: Cem Basceri, Thomas Gehrke, Charles M. Watkins