Abstract: Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Abstract: Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Abstract: Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.

Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Abstract: Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.