Abstract: A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ spectrographic monitoring system to generate a sequence of measured spectra, selecting less than all of the measured spectra to generate a sequence of selected spectra, generating a sequence of values from the sequence of selected spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of values.

Abstract: A polishing pad is described that has a polishing layer with a polishing surface, an adhesive layer on a side of the polishing layer opposite the polishing layer, and a solid light-transmitting window extending through and molded to the polishing layer. The window has a top surface coplanar with the polishing surface and a bottom surface coplanar with a lower surface of the adhesive layer. A method of making a polishing pad includes forming an aperture through a polishing layer and an adhesive layer, securing a backing piece to the adhesive layer on a side opposite a polishing surface of the polishing layer, dispensing a liquid polymer into the aperture, and curing the liquid polymer to form a window.

Abstract: A method of operating a polishing system includes polishing a substrate at a polishing station, the substrate held by a carrier head during polishing, transporting the substrate to an in-sequence optical metrology system positioned between the polishing station and another polishing station or a transfer station, measuring a plurality of spectra reflected from the substrate with a probe of the optical metrology system while moving the carrier head to cause the probe to traverse a path across the substrate and while the probe remains stationary, the path across the substrate comprising either a plurality of concentric circles or a plurality of substantially radially aligned arcuate segments, and adjusting a polishing endpoint or a polishing parameter of the polishing system based on one or more characterizing values generated based on at least some of the plurality of spectra.

Abstract: A load cup apparatus for transferring a substrate in a processing system includes a pedestal assembly having a substrate support, an actuator, and a controller. The actuator is configured to move the pedestal assembly into a loading position in contact with a retaining ring of a carrier head and to generate a retaining ring thickness signal based on a distance travelled by the pedestal assembly. The controller is configured to receive the retaining ring thickness signal from the actuator.

Abstract: Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.

Abstract: A method of controlling a polishing operation includes measuring a plurality of spectra at a plurality of different positions on a substrate to provide a plurality of measured spectra. For each measured spectrum of the plurality of measured spectra, a characterizing value is generated based on the measured spectrum. For each characterizing value, a goodness of fit of the measured spectrum to another spectrum used in generating the characterizing value is determined. A wafer-level characterizing value map is generated by applying a regression to the plurality of characterizing values with the plurality of goodnesses of fit used as weighting factors in the regression. A polishing endpoint or a polishing parameter of the polishing apparatus is adjusted based on the wafer-level characterizing map, and the substrate or a subsequent substrate is polished in the polishing apparatus with the adjusted polishing endpoint or polishing parameter.

Abstract: A method of configuring a polishing monitoring system includes receiving user input selecting a plurality of libraries, each library of the plurality of libraries comprising a plurality of reference spectra for use in matching to measured spectra during polishing, each reference spectrum of the plurality of reference spectra having an associated index value, for a first zone of a substrate, receiving user input selecting a first subset of the plurality of libraries, and for a second zone of the substrate, receiving user input selecting a second subset of the plurality of libraries.

Abstract: Methods adapted to clean a chemical mechanical polishing (CMP) pad are disclosed. The methods include positioning an energized fluid delivery assembly over a CMP polishing pad; rotating the polishing pad on a platen; energizing a fluid within the energized fluid delivery assembly; applying the energized fluid to the polishing pad to dislodge slurry residue and debris; and removing the dislodged slurry residue and debris using a vacuum suction unit. Systems and apparatus for carrying out the methods are provided, as are numerous additional aspects.

Abstract: A method and apparatus for conditioning a polishing pad used in a substrate polishing process. In one embodiment, a method for conditioning a polishing pad utilized to polish a substrate is provided. The method includes providing relative motion between an optical device and a polishing pad having a polishing medium disposed thereon, and scanning a processing surface of the polishing pad with a laser beam to condition the processing surface, wherein the laser beam has a wavelength that is substantially transparent to the polishing medium, but is reactive with the material of the polishing pad.

Abstract: A method for controlling the residue clearing process of a chemical mechanical polishing (“CMP”) process is provided. Dynamic in-situ profile control (“ISPC”) is used to control polishing before residue clearing starts, and then a new polishing recipe is dynamically calculated for the clearing process. Several different methods are disclosed for calculating the clearing recipe. First, in certain implementations when feedback at T0 or T1 methods are used, a post polishing profile and feedback offsets are generated in ISPC software. Based on the polishing profile and feedback generated from ISPC before the start of the clearing process, a flat post profile after clearing is targeted. The estimated time for the clearing step may be based on the previously processed wafers (for example, a moving average of the previous endpoint times). The calculated pressures may be scaled to a lower (or higher) baseline pressure for a more uniform clearing.

Abstract: A polishing apparatus includes a carrier head configured to hold a wafer in a first plane, the wafer having a perimeter and a fiducial, a drive shaft having an axis perpendicular to the first plane and configured to rotate the carrier head about the axis, a light source configured to direct light onto an outer face of the wafer at a position adjacent the perimeter of the wafer; a detector configured to detect the light collected from the wafer while the drive shaft rotates the carrier head and the wafer; and a controller configured to receive a first signal indicating an angular position of the drive shaft and receive a second signal from the detector, the controller configured to determine based on the first signal and the second signal an angular position of the fiducial with respect the carrier head.

Abstract: A method of controlling a polishing operation includes measuring a plurality of spectra at a plurality of different positions on a substrate to provide a plurality of measured spectra. For each measured spectrum of the plurality of measured spectra, a characterizing value is generated based on the measured spectrum. For each characterizing value, a goodness of fit of the measured spectrum to another spectrum used in generating the characterizing value is determined. A wafer-level characterizing value map is generated by applying a regression to the plurality of characterizing values with the plurality of goodnesses of fit used as weighting factors in the regression. A polishing endpoint or a polishing parameter of the polishing apparatus is adjusted based on the wafer-level characterizing map, and the substrate or a subsequent substrate is polished in the polishing apparatus with the adjusted polishing endpoint or polishing parameter.

Abstract: A method of controlling a polishing operation is described. A controller stores an optical model for a layer stack having a plurality of layers and a plurality of input parameters including a first parameter and a second parameter. The controller stores data defining a plurality of default values for the first parameter and measures an optical property of a substrate and generates a second value. Using the optical model and the second value and iterating over the first values, a number of reference spectra are calculated. A spectrum is measured and the measured spectrum is matched to the reference spectra and the best matched reference spectrum is determined. The first value of the best matched reference spectrum is determined and is used to adjust a polishing endpoint or a polishing parameter of a polishing apparatus.

Abstract: A method of operating a polishing system includes polishing a substrate at a polishing station, the substrate held by a carrier head during polishing, transporting the substrate to an in-sequence optical metrology system positioned between the polishing station and another polishing station or a transfer station, measuring a plurality of spectra reflected from the substrate with a probe of the optical metrology system while moving the carrier head to cause the probe to traverse a path across the substrate and while the probe remains stationary, the path across the substrate comprising either a plurality of concentric circles or a plurality of substantially radially aligned arcuate segments, and adjusting a polishing endpoint or a polishing parameter of the polishing system based on one or more characterizing values generated based on at least some of the plurality of spectra.

Abstract: In one aspect, a substrate polishing apparatus is disclosed. The apparatus has a polishing platform having two or more zones, each zone adapted to contain a different slurry component. In another aspect, a substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.

Abstract: A polishing apparatus includes a plurality of stations supported on a platform, the plurality of stations including at least two polishing stations and a transfer station, each polishing station including a platen to support a polishing pad, a plurality of carrier heads suspended from and movable along a track such that each polishing station is selectively positionable at the stations, and a controller configured to control motion of the carrier heads along the track such that during polishing at each polishing station only a single carrier head is positioned in the polishing station.

Abstract: A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ spectrographic monitoring system to generate a sequence of measured spectra, selecting less than all of the measured spectra to generate a sequence of selected spectra, generating a sequence of values from the sequence of selected spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of values.

Abstract: Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.