Abstract: A polishing pad is described that has a polishing layer with a polishing surface, an adhesive layer on a side of the polishing layer opposite the polishing layer, and a solid light-transmitting window extending through and molded to the polishing layer. The window has a top surface coplanar with the polishing surface and a bottom surface coplanar with a lower surface of the adhesive layer. A method of making a polishing pad includes forming an aperture through a polishing layer and an adhesive layer, securing a backing piece to the adhesive layer on a side opposite a polishing surface of the polishing layer, dispensing a liquid polymer into the aperture, and curing the liquid polymer to form a window.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A polishing pad is described that has a polishing layer with a polishing surface, an adhesive layer on a side of the polishing layer opposite the polishing layer, and a solid light-transmitting window extending through and molded to the polishing layer. The window has a top surface coplanar with the polishing surface and a bottom surface coplanar with a lower surface of the adhesive layer. A method of making a polishing pad includes forming an aperture through a polishing layer and an adhesive layer, securing a backing piece to the adhesive layer on a side opposite a polishing surface of the polishing layer, dispensing a liquid polymer into the aperture, and curing the liquid polymer to form a window.

Abstract: A load cup apparatus for transferring a substrate in a processing system includes a pedestal assembly having a substrate support, an actuator, and a controller. The actuator is configured to move the pedestal assembly into a loading position in contact with a retaining ring of a carrier head and to generate a retaining ring thickness signal based on a distance travelled by the pedestal assembly. The controller is configured to receive the retaining ring thickness signal from the actuator.

Abstract: A method for forming an integrated circuit is provided. In one embodiment, the method includes forming a stop layer comprising carbon doped silicon nitride on a gate region on a substrate, the gate region having a poly gate and one or more spacers formed adjacent the poly gate, forming a dielectric layer on the stop layer, and removing a portion of the dielectric layer above the gate region using a CMP process, wherein the stop layer is a strain inducing layer having a CMP removal rate that is less than the CMP removal rate of the dielectric layer and equal to or less than the CMP removal rate of the one or more spacers.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: Embodiments of the invention generally relate to a method and apparatus for cleaning a substrate. Particularly, embodiments of the invention relate to an apparatus and method for cleaning a substrate using a scrub brush. One embodiment provides a brush box assembly for cleaning a substrate. The assembly comprises a chamber body having a cleaning chamber disposed therein, a rotatable chuck disposed in the cleaning chamber, and an edge cleaner module positioned adjacent the chuck.

Abstract: In-situ monitoring during processing of a substrate includes processing a conductive film on a substrate in a semiconductor processing apparatus and generating a signal from an eddy current sensor during processing. The signal includes a first portion generated when the eddy current sensor is adjacent the substrate, a second portion generated when the eddy current sensor is adjacent a metal body and not adjacent the substrate, and a third portion generated when the eddy current sensor is adjacent neither the metal body nor the substrate. The second portion of the signal is compared to the third portion of the signal and a gain is determined based at least on a result of the comparing, and the first portion of the signal is multiplied by the gain to generate an adjusted signal.

Abstract: A polishing system includes a polishing pad having a solid light-transmissive window, an optical fiber having an end, and a spacer having a vertical aperture therethrough. A bottom surface of the spacer contacts the end of the optical fiber, a top surface of the spacer contacts the underside of the window, and the vertical aperture is aligned with the optical fiber.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range.

Abstract: A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.

Abstract: A method of configuring a polishing monitoring system includes receiving user input selecting a plurality of libraries, each library of the plurality of libraries comprising a plurality of reference spectra for use in matching to measured spectra during polishing, each reference spectrum of the plurality of reference spectra having an associated index value, for a first zone of a substrate, receiving user input selecting a first subset of the plurality of libraries, and for a second zone of the substrate, receiving user input selecting a second subset of the plurality of libraries.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, a method for monitoring at least one surface of a retaining ring coupled to a carrier head is provided. The method includes moving the carrier head adjacent a sensor device disposed in a polishing module, transmitting energy from the sensor device toward the retaining ring, receiving energy reflected from the retaining ring, and determining a condition of the retaining ring based on the received energy.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a retaining ring having a flexible lower portion and a rigid upper portion.

Abstract: A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.

Abstract: A pad conditioner is provided for conditioning a polishing pad in chemical mechanical planarization (CMP). The pad conditioner comprises a plastic abrasive portion having a first hardness and optionally a brush portion having a second hardness less than the first hardness. The plastic abrasive portion comprises a base plate and a plurality of plastic nodules formed on a surface of the base plate, each of the plastic nodules having a planar top surface, wherein the planar top surface is positioned to substantially contact a polishing pad. The brush portion may be positioned adjacent to the plastic abrasive portion, the brush portion having a plurality of brush elements positioned to substantially contact the pad.

Abstract: A polishing system includes a polishing pad having a solid light-transmissive window, an optical fiber having an end, and a spacer having a vertical aperture therethrough. A bottom surface of the spacer contacts the end of the optical fiber, a top surface of the spacer contacts the underside of the window, and the vertical aperture is aligned with the optical fiber.