Abstract: One embodiment provides an integrated circuit including a first non-planar structure and a waveguide configured to provide electromagnetic waves to the first non-planar structure. The first non-planar structure provides a first signal in response to at least some of the electromagnetic waves.

Abstract: A fungicidal composition containing a fungicidally effective amount of a compound of Formula I, (3S,6S,7R,8R)-8-benzyl-3-(3-((isobutyryloxy)methoxy)-4-methoxypicolinamido)-6-methyl-4,9-dioxo-1,5-dioxonan-7-yl isobutyrate, and at least one fungicide selected from the group consisting of prothioconazole, epoxiconazole, cyproconazole, myclobutanil, prochloraz, metconazole, difenconazole, tebuconazole, tetraconazole, fenbuconazole, propiconazole, fluquinconazole, flusilazole, flutriafol, and fenpropimorph.

Abstract: The invention relates to a method for the controlled operation of an industrial oven which is heated in a regenerative manner and which comprises an oven chamber, in particular a melting tank, in particular for glass, having the following steps: injecting fuel into the oven chamber via at least one fuel injector, which is designed to inject fuel, practically without combustion air in particular, conducting combustion air to the oven chamber in a first period duration and conducting exhaust gas (AG) out of the oven chamber in a second period duration separately from the fuel in a periodically alternating manner by means of a left regenerator and right regenerator which are associated with the at least one fuel injector and which are designed to regeneratively store heat from the exhaust gas and transmit heat to the combustion air. A supply of the combustion air is automatically controlled by means of a control loop.

Abstract: Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.

Abstract: Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric in comparison with other transistors on the same integrated circuit arrangement. As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions of the tunnel field effect transistor.

Abstract: A high-strength multiphase steel with minimum tensile strengths of 580 MPa, preferably having a dual-phase structure for a cold-rolled or hot-rolled steel strip with improved forming properties, particularly for lightweight vehicle construction contains the elements (contents in mass-%): C 0.075 to ?0.105; Si 0.600 to ?0.800; Mn 1.000 to ?2.250; Cr 0.280 to ?0.480; Al 0.010 to ?0.060; P?0.020; N?0.0100; S?0.0150, remainder iron, including typical steel-accompanying elements not mentioned above, which are impurities introduced by smelting, with the condition that the Mn content is preferably ?1.500% for strip thicknesses up to 1 mm, the Mn content is preferably ?1.750% for strip thicknesses of 1 to 2 mm, and the Mn content is preferably ?1.

Abstract: One or more embodiments relate to a floating gate memory device, comprising: a substrate; a floating gate disposed over the substrate; and a control gate substantially laterally surrounding at least a portion of the floating gate.

Abstract: In a method for operating a heatable exhaust-gas sensor, which supplies at least one measuring signal and in which a sensor heater is operated using a pulse-width modulated operating voltage, the detection of the at least one measuring signal has priority over the supply of the pulse-width modulated operating voltage for sensor heater, and at least during a predefined time window in which the measuring signal is detected, the supply of the pulse-width modulated operating voltage for the sensor heater is suppressed using a blocking signal.

Abstract: In a process for producing a cold- or hot-rolled steel strip from an ultrahigh-strength multiphase steel having a particular composition the required multiphase microstructure is generated during continuous heat treatment. The cold- or hot-rolled steel strip is heated in the continuous heat treatment furnace to a temperature in the range from 700 to 950° C. and the heat-treated steel strip is subsequently cooled from the heat treatment temperature at a cooling rate of from 15 to 100° C./s to a first intermediate temperature of from 300 to 500° C. followed by cooling at a cooling rate of from 15 to 100° C./s to a second intermediate temperature of from 200 to 250° C.; the steel strip is subsequently cooled at a cooling rate of from 2 to 30° C./s in air to room temperature or the cooling at a cooling rate of from 15 to 100° C./s is maintained from the first intermediate temperature to room temperature.

Abstract: A high-strength multi-phase steel having tensile strengths of no less than 580 MPa, preferably with a dual-phase structure for a cold-rolled or hot-rolled steel strip having improved forming properties, in particular for lightweight vehicle construction is disclosed, containing the following elements (contents in % by mass): C 0.075 to ?0.105; Si 0.200 to ?0.300; Mn 1.000 to ?2.000; Cr 0.280 to ?0.480; Al 0.10 to ?0.060; P ?0.020; Nb ?0.005 to ?0.025; N ?0.0100; S ?0.0050; the remainder iron, including conventional steel-accompanying elements not mentioned above.

Abstract: A safened herbicidal composition for use, for example, in wheat or barley, comprising a herbicidally effective amount of (a) a compound of formula (I): or an agriculturally acceptable salt or ester thereof and (b) a safener, for example, from the quinolinyloxyacetate family of chemicals, including, but not limited to, cloquintocet mexyl, provide weed control of undesirable vegetation.

Abstract: Herbicidal compositions and methods of controlling undesirable vegetation using a combination of (a) isoxaben, (b) aminopyralid or an agriculturally acceptable salt or ester thereof, and optionally (c) flufenacet and (d) diflufenacet provide control of broad-leaved weeds.

Abstract: Herbicidal compositions and methods of controlling undesirable vegetation using a combination of (a) isoxaben, (b) flufenacet, and optionally (c) diflufenican provide control of broad-leaved weeds.

Abstract: One embodiment provides an integrated circuit including a first non-planar structure and a waveguide configured to provide electromagnetic waves to the first non-planar structure. The first non-planar structure provides a first signal in response to at least some of the electromagnetic waves.

Abstract: Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. A complimentary metal oxide semiconductor (CMOS) device includes a PMOS transistor having at least two first gate electrodes comprising a first parameter, and an NMOS transistor having at least two second gate electrodes comprising a second parameter, wherein the second parameter is different than the first parameter. The first parameter and the second parameter may comprise the thickness or the dopant profile of the gate electrode materials of the PMOS and NMOS transistors. The first and second parameter of the at least two first gate electrodes and the at least two second gate electrodes establish the work function of the PMOS and NMOS transistors, respectively.

Abstract: According to one general aspect, a method of transportation management may include receiving a request to transport a current freight unit from a current source location to a current destination location. The method may include selecting a prior shipment path based upon a similarity, as defined by a set of predefined criteria, between the current freight unit and a prior freight unit. The method may further include initializing a shipment path improver with the prior shipment path. The method may also include generating, via the shipment path improver, a current shipment path for the current freight unit from the current source location to the current destination location based upon the prior shipment path.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. A complimentary metal oxide semiconductor (CMOS) device includes a PMOS transistor having at least two first gate electrodes comprising a first parameter, and an NMOS transistor having at least two second gate electrodes comprising a second parameter, wherein the second parameter is different than the first parameter. The first parameter and the second parameter may comprise the thickness or the dopant profile of the gate electrode materials of the PMOS and NMOS transistors. The first and second parameter of the at least two first gate electrodes and the at least two second gate electrodes establish the work function of the PMOS and NMOS transistors, respectively.

Abstract: Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor. An explanation is given of, inter alia, tunnel field effect transistors having a thicker gate dielectric in comparison with other transistors on the same integrated circuit arrangement. As an alternative or in addition, said tunnel field effect transistors have gate regions at mutually remote sides of a channel forming region or an interface between the connection regions of the tunnel field effect transistor.

Abstract: Methods of patterning features, methods of manufacturing semiconductor devices, and semiconductor devices are disclosed. In one embodiment, a method of patterning a feature includes forming a first portion of the feature in a first material layer. A second portion of the feature is formed in the first material layer, and a third portion of the feature is formed in a second material layer.