Abstract: A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

Abstract: A nanosecond pulser may include a plurality of switch modules, a transformer, and an output. Each of the plurality of switch modules may include one or more solid state switches. The transformer may include a core, at least one primary winding wound around at least a portion of the core, each of the plurality of switch modules may be coupled with the primary windings, and a plurality of secondary windings wound at least partially around a portion of the core. The output may output electrical pulses having a peak voltage greater than about 1 kilovolt and having a pulse width of less than about 1000 nanoseconds. The output may output electrical pulses having a peak voltage greater than about 5 kilovolts, a peak power greater than about 100 kilowatts, a pulse width between 10 nanoseconds and 1000 nanoseconds, a rise time less than about 50 nanoseconds, or some combination thereof.

Abstract: Some embodiments include a high voltage, high frequency switching circuit. In some embodiments, the high voltage, high frequency switching circuit includes a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz; a transformer having a primary side and secondary side; an output electrically coupled with the secondary side of the transformer; and a primary sink electrically coupled with the primary side of the transformer and in parallel with the high voltage switching power supply, the primary sink comprising at least one resistor that discharges a load coupled with the output.

Abstract: Embodiments described herein include a solid-state switch tube replacement for the radar system such as, for example, the SPY-1 radar system. Some embodiments provide for a technology for the precision switching that enables IGBT power modules to operate robustly in a series configuration and/or a parallel configuration to produce precision switching at high voltage (e.g., 20 kV and above) and high frequencies (e.g., 1 MHz and above).

Abstract: A pulse generator is disclosed that includes at least the following stages a driver stage, a transformer stage, a rectifier stage, and an output stage. The driver stage may include at least one solid state switch such as, for example, of one or more IGBTs and/or one or more MOSFETs. The driver stage may also have a stray inductance less than 1,000 nH. The transformer stage may be coupled with the driver stage and/or with a balance stage and may include one or more transformers. The rectifier stage may be coupled with the transformer stage and may have a stray inductance less than 1,000 nH. The output stage may be coupled with the rectifier stage. The output stage may output a signal pulse with a voltage greater than 2 kilovolts and a frequency greater than 5 kHz. In some embodiments, the output stage may be galvanically isolated from a reference potential.

Abstract: A nanosecond pulser system is disclosed. In some embodiments, the nanosecond pulser system may include a nanosecond pulser having a nanosecond pulser input; a plurality of switches coupled with the nanosecond pulser input; one or more transformers coupled with the plurality of switches; and an output coupled with the one or more transformers and providing a high voltage waveform with a amplitude greater than 2 kV and a frequency greater than 1 kHz based on the nanosecond pulser input. The nanosecond pulser system may also include a control module coupled with the nanosecond pulser input; and an control system coupled with the nanosecond pulser at a point between the transformer and the output, the control system providing waveform data regarding an high voltage waveform produced at the point between the transformer and the output.

Abstract: A high voltage power system is disclosed. In some embodiments, the high voltage power system includes a high voltage pulsing power supply; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a frequency greater than 1 kHz; and a bias compensation circuit arranged in parallel with the output. In some embodiments, the bias compensation circuit can include a blocking diode; and a DC power supply arranged in series with the blocking diode.

Abstract: Some embodiments include a high voltage, high frequency switching circuit. In some embodiments, the high voltage, high frequency switching circuit includes a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz; a transformer having a primary side and secondary side; an output electrically coupled with the secondary side of the transformer; and a primary sink electrically coupled with the primary side of the transformer and in parallel with the high voltage switching power supply, the primary sink comprising at least one resistor that discharges a load coupled with the output.

Abstract: A nanosecond pulser may include a plurality of switch modules, a transformer, and an output. Each of the plurality of switch modules may include one or more solid state switches. The transformer may include a core, at least one primary winding wound around at least a portion of the core, each of the plurality of switch modules may be coupled with the primary windings, and a plurality of secondary windings wound at least partially around a portion of the core. The output may output electrical pulses having a peak voltage greater than about 1 kilovolt and having a pulse width of less than about 1000 nanoseconds. The output may output electrical pulses having a peak voltage greater than about 5 kilovolts, a peak power greater than about 100 kilowatts, a pulse width between 10 nanoseconds and 1000 nanoseconds, a rise time less than about 50 nanoseconds, or some combination thereof.

Abstract: Various RF plasma systems are disclosed that do not require a matching network. In some embodiments, the RF plasma system includes an energy storage capacitor; a switching circuit coupled with the energy storage capacitor, the switching circuit producing a plurality of pulses with a pulse amplitude and a pulse frequency, the pulse amplitude being greater than 100 volts; a resonant circuit coupled with the switching circuit. In some embodiments, the resonant circuit includes: a transformer having a primary side and a secondary side; and at least one of a capacitor, an inductor, and a resistor. In some embodiments, the resonant circuit having a resonant frequency substantially equal to the pulse frequency, and the resonant circuit increases the pulse amplitude to a voltage greater than 2 kV.

Abstract: Some embodiments include a plasma system comprising: a plasma chamber, an RF plasma generator, a bias generator, and a controller. The RF plasma generator may be electrically coupled with the plasma chamber and may produce a plurality of RF bursts, each of the plurality of RF bursts including RF waveforms, each of the plurality of RF bursts having an RF burst turn on time and an RF burst turn off time. The bias generator may be electrically coupled with the plasma chamber and may produce a plurality of bias bursts, each of the plurality of bias bursts including bias pulses, each of the plurality of bias bursts having an bias burst turn on time and an bias burst turn off time. In some embodiments the controller is in communication with the RF plasma generator and the bias generator that controls the timing of various bursts or waveforms.

Abstract: A nanosecond pulser system is disclosed. In some embodiments, the nanosecond pulser system may include a nanosecond pulser having a nanosecond pulser input; a plurality of switches coupled with the nanosecond pulser input; one or more transformers coupled with the plurality of switches; and an output coupled with the one or more transformers and providing a high voltage waveform with a amplitude greater than 2 kV and a frequency greater than 1 kHz based on the nanosecond pulser input. The nanosecond pulser system may also include a control module coupled with the nanosecond pulser input; and an control system coupled with the nanosecond pulser at a point between the transformer and the output, the control system providing waveform data regarding an high voltage waveform produced at the point between the transformer and the output.

Abstract: Some embodiments include a nanosecond pulser circuit. In some embodiments, a nanosecond pulser circuit may include: a high voltage power supply; a nanosecond pulser electrically coupled with the high voltage power supply and switches voltage from the high voltage power supply at high frequencies; a transformer having a primary side and a secondary side, the nanosecond pulser electrically coupled with the primary side of the transformer; and an energy recovery circuit electrically coupled with the secondary side of the transformer. In some embodiments, the energy recovery circuit comprises: an inductor electrically coupled with the high voltage power supply; a crowbar diode arranged in parallel with the secondary side of the transformer; and a second diode disposed in series with the inductor and arranged to conduct current from a load to the high voltage power supply.

Abstract: A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

Abstract: A pulse generator is disclosed that includes at least the following stages a driver stage, a transformer stage, a rectifier stage, and an output stage. The driver stage may include at least one solid state switch such as, for example, of one or more IGBTs and/or one or more MOSFETs. The driver stage may also have a stray inductance less than 1,000 nH. The transformer stage may be coupled with the driver stage and/or with a balance stage and may include one or more transformers. The rectifier stage may be coupled with the transformer stage and may have a stray inductance less than 1,000 nH. The output stage may be coupled with the rectifier stage. The output stage may output a signal pulse with a voltage greater than 2 kilovolts and a frequency greater than 5 kHz. In some embodiments, the output stage may be galvanically isolated from a reference potential.

Abstract: Some embodiments include a plasma sheath control system that includes an RF power supply producing an A sinusoidal waveform with a frequency greater than 20 kHz and a peak voltage greater than 1 kV and a plasma chamber electrically coupled with the RF power supply, the plasma chamber having a plurality of ions that are accelerated into a surface disposed with energies greater than about 1 kV, and the plasma chamber produces a plasma sheath within the plasma chamber from the sinusoidal waveform. The plasma sheath control system includes a blocking diode electrically connected between the RF power supply and the plasma chamber and a capacitive discharge circuit electrically coupled with the RF power supply, the plasma chamber, and the blocking diode; the capacitive discharge circuit discharges capacitive charges within the plasma chamber with a peak voltage greater than 1 kV and a discharge time that less than 250 nanoseconds.

Abstract: Some embodiments include a high voltage pulsing power supply. A high voltage pulsing power supply may include: a high voltage pulser having an output that provides pulses with an amplitude greater than about 1 kV, a pulse width greater than about 1 ?s, and a pulse repetition frequency greater than about 20 kHz; a plasma chamber; and an electrode disposed within the plasma chamber that is electrically coupled with the output of the high voltage pulser to produce a pulsing an electric field within the chamber.

Abstract: Some embodiments include a thermal management system for a nanosecond pulser. In some embodiments, the thermal management system may include a switch cold plates coupled with switches, a core cold plate coupled with one or more transformers, resistor cold plates coupled with resistors, or tubing coupled with the switch cold plates, the core cold plates, and the resistor cold plates. The thermal management system may include a heat exchanger coupled with the resistor cold plates, the core cold plate, the switch cold plate, and the tubing. The heat exchanger may also be coupled with a facility fluid supply.

Abstract: A nanosecond pulser system is disclosed. In some embodiments, the nanosecond pulser system may include a nanosecond pulser having a nanosecond pulser input; a plurality of switches coupled with the nanosecond pulser input; one or more transformers coupled with the plurality of switches; and an output coupled with the one or more transformers and providing a high voltage waveform with a amplitude greater than 2 kV and a frequency greater than 1 kHz based on the nanosecond pulser input. The nanosecond pulser system may also include a control module coupled with the nanosecond pulser input; and an control system coupled with the nanosecond pulser at a point between the transformer and the output, the control system providing waveform data regarding an high voltage waveform produced at the point between the transformer and the output.

Abstract: A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.