Abstract: A sequence detection device includes a decision-feedback equalizer (DFE), a combining circuit, a decision circuit, and a sequence detection circuit. The DFE processes a symbol decision signal to generate a first equalized signal. The combining circuit combines a data signal and the first equalized signal to generate a sample signal. The decision circuit performs hard decision upon the sample signal to generate the symbol decision signal. The sequence detection circuit performs sequence detection upon the data signal to generate and output a symbol sequence. Regarding the sequence detection, the sequence detection circuit selects branches for branch metric calculation according to at least the symbol decision signal.

Abstract: A device, such as a head-mounted wearable device (HMWD), provides audible notifications to a user with a voice user interface (VUI). A filtered subset of notifications addressed to the user, such as notifications from contacts associated with specified applications, are processed by a text to speech system that generates audio output for presentation to the user. The audio output may be presented using the HMWD. For example, the audio output generated from a text message received from a contact may be played on the device. The user may provide an input to play the notification again, initiate a reply, or take another action. The input may comprise a gesture on a touch sensor, activation of a button, verbal input acquired by a microphone, and so forth.

Abstract: In one aspect, a method includes forming a metal layer on a substrate, wherein the metal layer comprises a first coil, forming a planarized insulator layer on the metal layer, forming at least one via in the planarized insulator layer, depositing a magnetoresistance (MR) element on the planarized insulator layer, and forming a second coil extending above the MR element. The at least one via electrically connects to the metal layer on one end and to MR element on the other end.

Abstract: A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration.

Abstract: A polyphenylene ether resin modified with benzoxazine, a method for producing the same, and a substrate material for a circuit board are provided. The polyphenylene ether resin modified with the benzoxazine has a structural formula as follows: in which R represents a chemical group that is located between two hydroxyphenyl functional groups of a bisphenol compound, and n is an integer between 3 and 25, inclusive.

Abstract: A polyphenylene ether resin modified with two amino functional groups, a method for producing the same, and a substrate material for a circuit board are provided. The polyphenylene ether resin modified with the two amino functional groups has a structural formula as follows: in which R represents a chemical group that is located between two hydroxyphenyl functional groups of a bisphenol compound, and n is an integer between 3 and 25, inclusive.

Abstract: A polyphenylene ether resin modified with bismaleimide, a method for producing the same, and a substrate material for a circuit board are provided. The polyphenylene ether resin modified with the bismaleimide has a structural formula as follows: in which R represents a chemical group that is located between two hydroxyphenyl functional groups of a bisphenol compound, and n is an integer between 3 and 25, inclusive.

Abstract: A battery, having polyvalent aluminum metal as the electrochemically active anode material and also including a solid ionically conducting polymer material.

Abstract: A rotating mechanism includes a main shaft assembly, a first fastening bracket, a first transmission arm, a first rotation arm, a first support plate, a second fastening bracket, a second transmission arm, a second rotation arm, and a second support plate. One end of the first transmission arm is slidably connected to the first fastening bracket, and the other end is rotatably connected to the main shaft assembly. Two ends of the first rotation arm are rotatably connected to the first fastening bracket and the main shaft assembly respectively.

Abstract: The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier; forming a first base layer on the carrier; and forming working units on the first base layer. The working units are spaced apart from one another.

Abstract: Methods and apparatus for a sensor including a series of tunneling magnetoresistance (TMR) pillars and a heatsink adjacent to at least one of the TMR pillars, where the heatsink comprises Titanium Nitride (TiN).

Abstract: The present disclosure is directed to an in situ closed-loop radio frequency (RF) power management on RF processes such as a plasma etch process, a plasma chemical vapor deposition process, a plasma physical vapor deposition process, a plasma clean process, or the like. An RF power measurement device according to one or more embodiments of the present disclosure assists the in situ closed-loop RF power management on RF processes. In some embodiments, the RF power measurement device includes a coil-shaped current sensor that is wound around the path between an RF generator and a chamber. The coil-shaped current sensor senses the current flowing through this path so that the power of the RF generator may be calibrated without having to separate the RF generator for separate analysis and calibration. The RF power measurement device allows management of RF power in an in situ closed-loop manner.

Abstract: Semiconductor devices having improved gate electrode structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; an n-type work function layer over the high-k dielectric layer; an anti-reaction layer over the n-type work function layer, the anti-reaction layer including a dielectric material; a p-type work function layer over the anti-reaction layer, the p-type work function layer covering top surfaces of the anti-reaction layer; and a conductive cap layer over the p-type work function layer.

Abstract: A cryogenic system cools and operates cryogenic electronics. The cryogenic system includes a cryogenic stage or multiple cryogenic stages for cooling the cryogenic electronics to an operational cryogenic temperature. The cryogenic stage or stages transfer heat from the cryogenic electronics to an ambient environment. An optical fiber or multiple optical fibers deliver an operational power from the ambient environment to the cryogenic electronics and transfer communication data between the cryogenic electronics and the ambient environment. Preferably, the only connection delivering any power from the ambient environment to the cryogenic electronics or transferring any data from the cryogenic electronics to the ambient environment is the optical fiber or fibers, such that the cryogenic system does not include any electrically conductive wires spanning between the ambient environment and the cryogenic electronics.

Abstract: A fan casing for mounting of a fan includes a frame including four corner segments and four side segments that are arranged alternately with the corner segments, a seat disposed in the frame, and four support members extending radially and outwardly from the seat and connected respectively to the corner segments. Each support member includes a base connected to the seat and having a width reducing in a direction away from the seat, and a rib connected between the base and the corresponding corner segment. The bases are interconnected to surround the seat. Any two adjacent bases are interconnected to form an arc surface facing the corresponding side segment and adapted to absorb shock.

Abstract: The present invention provides a QFN packaging structure and QFN packaging method. By providing the insulating layer on the outer side of the leads of the QFN packaging structure, a short circuit between the leads and the electromagnetic shielding layer can be prevented. In addition, the grounding lead is exposed from the insulating layer, such that the electromagnetic shielding layer is grounded via the grounding lead, thereby realizing the electromagnetic shielding design of the QFN packaging structure.

Abstract: The present invention provides a QFN packaging structure and QFN packaging method. The electromagnetic shielding layer as provided on the outer side of the QFN packaging structure by spacing at a certain interval from the leads may cooperate with the base island having the lug boss on the side edge, such that all surfaces of the chip can be electromagnetically shielded and protected while ensuring the insulation between the electromagnetic shielding layer and the leads.

Abstract: A display device includes a pixel array substrate and a circuit board. The pixel array substrate has a first surface, a second surface opposite to the first surface, and a first side surface connecting the first surface and the second surface. Multiple bonding pads are located on the first surface. The circuit board is bent from above the first surface of the pixel array substrate to below the second surface. The circuit board is electrically connected to the bonding pads and includes a thermoplastic substrate. The thermoplastic substrate includes a third surface facing the pixel array substrate and a fourth surface opposite to the third surface. The thermoplastic substrate includes a first bend formed by thermoplastics.

Abstract: A package device and a manufacturing method thereof are provided. The package device includes a redistribution layer including a first dielectric layer, a conductive layer, and a second dielectric layer. The conductive layer is disposed between the first dielectric layer and the second dielectric layer. The redistribution layer has a test mark, the test mark includes a plurality of conductive patterns formed of the conductive layer, and the conductive patterns are arranged in a ring shape.

Abstract: This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.