Abstract: In an organic field effect transistor with an electrical conductor-insulator-semiconductor structure, the semiconductor layer is made of an organic compound, and the insulator layer is made of a polymer obtained through polymerization or copolymerization of 2-cyanoethyl acrylate and/or 2-cyanoethyl methacrylate.

Abstract: An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): CH2?CHCOO—(CH2)2—CN??(1) and/or a monomer represented by the formula (2): CH2?C(CH3)COO—(CH2)2—CN??(2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.

Abstract: Four stochastic resonators 20-1 to 20-4 outputting a pulse signal in accordance with a stochastic resonance phenomenon are unidirectionally coupled in a ring-like form to constitute a fluctuation oscillator 10. When a signal output from each of the stochastic resonators 20-1 to 20-4 is successively transmitted in the stochastic resonators 20-1 to 20-4 coupled in a ring-like form, the output timings at each stochastic resonator 20 are synchronized with each other due to a cooperation phenomenon between the stochastic resonators 20-1 to 20-4, so that each stochastic resonator 20 is self-excited to oscillate at a constant period of time.

Abstract: Four stochastic resonators 20-1 to 20-4 outputting a pulse signal in accordance with a stochastic resonance phenomenon are unidirectionally coupled in a ring-like form to constitute a fluctuation oscillator 10. When a signal output from each of the stochastic resonators 20-1 to 20-4 is successively transmitted in the stochastic resonators 20-1 to 20-4 coupled in a ring-like form, the output timings at each stochastic resonator 20 are synchronized with each other due to a cooperation phenomenon between the stochastic resonators 20-1 to 20-4, so that each stochastic resonator 20 is self-excited to oscillate at a constant period of time.

Abstract: A method for immobilizing a self-organizing material or fine particles on a substrate, and a substrate whereupon the self-organizing material or the fine particles are immobilized. More specifically, the method for immobilizing the fine particles including a nucleic acid (for instance, DNA or RNA) or a metal oxide on the substrate, and the substrate whereupon the nucleic acid (for example, DNA or RNA) or the metal oxide is immobilized.

Abstract: In a probe apparatus that intermittently irradiates a sample with excitation light to observe the sample while subjecting a cantilever including a probe arranged to face a surface of the sample to self-excited vibration at a predetermined frequency, the sample is irradiated with the excitation light at a predetermined timing when a distance between the probe and the sample is not greater than a predetermined distance.

Abstract: A method for immobilizing a self-organizing material or fine particles on a substrate, and a substrate whereupon the self-organizing material or the fine particles are immobilized. More specifically, the method for immobilizing the fine particles including a nucleic acid (for instance, DNA or RNA) or a metal oxide on the substrate, and the substrate whereupon the nucleic acid (for example, DNA or RNA) or the metal oxide is immobilized.

Abstract: A solution containing polymer-bound metal nanoparticles is deposited onto a substrate, at least the surface of which is insulating, to form a pattern, the substrate is dried, and then the pattern is subjected to plasma exposure.

Abstract: An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): CH2?CHCOO—(CH2)2—CN ??(1) and/or a monomer represented by the formula (2): CH2?C(CH3)COO—(CH2)2—CN ??(2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.

Abstract: In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.

Abstract: In a probe apparatus that intermittently irradiates a sample with excitation light to observe the sample while subjecting a cantilever including a probe arranged to face a surface of the sample to self-excited vibration at a predetermined frequency, the sample is irradiated with the excitation light at a predetermined timing when a distance between the probe and the sample is not greater than a predetermined distance.

Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Abstract: In a probe apparatus that intermittently irradiates a sample with excitation light to observe the sample while subjecting a cantilever including a probe arranged to face a surface of the sample to self-excited vibration at a predetermined frequency, the sample is irradiated with the excitation light at a predetermined timing when a distance between the probe and the sample is not greater than a predetermined distance.

Abstract: A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer and the magnetization of the ferromagnetic n-type semiconductor layer. In this pin junction element, an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.

Abstract: In an organic field effect transistor with an electrical conductor-insulator-semiconductor structure, the semiconductor layer is made of an organic compound, and the insulator layer is made of a polymer obtained through polymerization or copolymerization of 2-cyanoethyl acrylate and/or 2-cyanoethyl methacrylate.

Abstract: In a preferred embodiment, an exploring needle of a probe 2 is located at the position of each base of a nucleic acid 6, and a tunneling current value is set to a given value measure. When a bias voltage applied to a substrate is changed step by step from ?6 V to 4 V, according to the height of an observed image of each base, the electronic state distribution pattern of each base is obtained. The thus obtained electronic state distribution pattern of each base in the nucleic acid as a measurement object is checked against those in a database to find a base species having the highest degree of similarity to each base by pattern matching to identify each base species to determine the base sequence of the nucleic acid.

Abstract: A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer and the magnetization of the ferromagnetic n-type semiconductor layer. In this pin junction element, an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.

Abstract: It is intended to provide a method of patterning a self-organizing material whereby a self-organizing material having a self-organization ability such as a nucleic acid can be aligned and immobilized in a desired manner on a substrate by using the imprint process, a patterned substrate of a self-organizing material and a method of producing the same, and a photomask. An immobilization layer containing a binder capable of binding to a self-organizing material is formed on a substrate. Then this immobilization layer is patterned by transferring an uneven pattern formed in a mold thereto by the imprint process. The self-organizing material is supplied onto the face having the uneven pattern of the immobilization layer transferred thereto. Thus, the self-organizing material is immobilized following the uneven pattern of the immobilization layer owing to the self-organization ability of the material per se and the binding ability of the binder contained in the immobilization layer.

Abstract: A method for immobilizing a self-organizing material or fine particles on a substrate, and a substrate whereupon the self-organizing material or the fine particles are immobilized. More specifically, the method for immobilizing the fine particles including a nucleic acid (for instance, DNA or RNA) or a metal oxide on the substrate, and the substrate whereupon the nucleic acid (for example, DNA or RNA) or the metal oxide is immobilized.

Abstract: A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer (11) and the magnetization of the ferromagnetic n-type semiconductor layer (12). In this pin junction element (10), an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.