Abstract: A method for carrying out read and write operations in a synchronous memory device having a shared I/O, includes receiving a read command directed to a first internal memory bank during a first timeslot, activating the first internal memory bank to access read data at a read address requested by the read command, receiving a write command directed to a second internal memory bank during a second timeslot later than the first timeslot, determining whether a data collision between the read data for output to the shared I/O with normal read latency and write data to be received on the shared I/O with normal write latency would occur, and receiving the write data on the shared I/O with the normal write latency during a third timeslot later than the second timeslot.

Abstract: A semiconductor device is disclosed in which a plurality of memory cores are provided on a semiconductor chip. Each of the memory cores comprises: first and second circuit regions and a first and second through electrode groups. a first power supply is supplied in the first circuit region in which a data bus for parallel data is driven, and a second power supply separated from the first power supply is supplied in the second circuit region in which the parallel data and serial data are bidirectionally converted. The first through electrode group includes through electrodes supplying the first power supply to the first circuit region, and the second through electrode group includes through electrodes supplying the second power supply to the second circuit region.

Abstract: A semiconductor device includes a sense amplifier circuit. The sense amplifier circuit includes a cross-coupled first transistor and second transistor that perform amplification. The sources of the cross-coupled transistors are respectively connected in series with a third transistor and a fourth transistor, and electrical current supply capability of the third and fourth transistors is controlled by a control voltage given to control electrodes of the third and fourth transistors. In a data retaining period, a minimum sub-threshold current necessary for retaining the data is flowed to the third and fourth transistors according to the control voltage, and bit line potential is maintained.

Abstract: A semiconductor memory device includes: a sense amplifier; a plurality of memory cell arrays; a shared MOS transistor that connects/disconnects the sense amplifier and a bit line included in the memory cell arrays; and a control circuit that controls operation of the shared MOS transistor. A part or whole of an in-sense-amplifier bit line that is a bit line connecting the sense amplifier and the shared MOS transistor is embedded in a semiconductor substrate.

Abstract: A semiconductor memory device includes: a sense amplifier; a plurality of memory cell arrays; a shared MOS transistor that connects/disconnects the sense amplifier and a bit line included in the memory cell arrays; and a control circuit that controls operation of the shared MOS transistor. A part or whole of an in-sense-amplifier bit line that is a bit line connecting the sense amplifier and the shared MOS transistor is embedded in a semiconductor substrate.

Abstract: Disclosed herein is a device that includes a delay line that includes n delay circuits cascade-connected and delays an input clock signal by k cycles, and a routing circuit that generates multi-phase clock signals having different phases based on at least a part of n output clock signals output from the n delay circuits, respectively. The n and the k are both integers more than 1 and a greatest common divisor thereof is 1.

Abstract: A method for carrying out read and write operations in a synchronous memory device having a shared I/O, includes receiving a read command directed to a first internal memory bank during a first timeslot, activating the first internal memory bank to access read data at a read address requested by the read command, receiving a write command directed to a second internal memory bank during a second timeslot later than the first timeslot, determining whether a data collision between the read data for output to the shared I/O with normal read latency and write data to be received on the shared I/O with normal write latency would occur, and receiving the write data on the shared I/O with the normal write latency during a third timeslot later than the second timeslot.

Abstract: Disclosed herein is a device that includes a delay line that includes n delay circuits cascade-connected and delays an input clock signal by k cycles, and a routing circuit that generates multi-phase clock signals having different phases based on at least a part of n output clock signals output from the n delay circuits, respectively. The n and the k are both integers more than 1 and a greatest common divisor thereof is 1.

Abstract: A semiconductor device includes a delay buffer, and a pipeline control circuit. The pipeline control circuit controls the delay buffer to hold read data from outputting to a read/write bus for each of banks based on a read command to the each bank while the pipeline control circuit controlling the delay buffer to output write data to the read/write bus, when a next command to the each bank is a write command for the write data. The read/write bus is common to the banks.

Abstract: Disclosed herein is a device that includes a delay line that includes n delay circuits cascade-connected and delays an input clock signal by k cycles, and a routing circuit that generates multi-phase clock signals having different phases based on at least a part of n output clock signals output from the n delay circuits, respectively. The n and the k are both integers more than 1 and a greatest common divisor thereof is 1.

Abstract: A device is disclosed herein, which may be used a level-shift circuit. The device includes first, second and third power supply lines supplied respectively with first, second and third power voltages that are different from one another, first and second input terminals and an output terminal, an output circuit coupled to the first power supply line, the first and second input terminals and the output terminal, a first inverter including an input node coupled to the first input terminal and an output node coupled to the second input terminal, a first transistor coupled in series to the first inverter between the second and third power supply lines, the first transistor being rendered non-conductive to deactivate the first inverter, and a control circuit configured to prevent the output terminal from being brought into an electrical floating state during deactivation of the first inverter.

Abstract: A semiconductor device includes first and second global bit lines; first, second, third and fourth sense node; a first sense switch coupled between the first sense node and the first global bit line; a second sense switch coupled between the second sense node and the second global bit line; a third sense switch coupled between the third sense node and the first global bit line; a fourth sense switch coupled between the fourth sense node and the second global bit line; a first sense amplifier including a first terminal coupled to the first sense node and a second terminal coupled to the second sense node; a second sense amplifier including a third terminal coupled to the third sense node and a fourth terminal coupled to the fourth sense node. The first, second, third and fourth terminals respectively have first, second, third and fourth parasitic capacitances substantially equal in capacitance value.

Abstract: A sense operation with respect to simultaneously-accessed two memory cells is performed by time division by using two sense amplifiers, and thereafter restore operations are performed simultaneously. With this arrangement, it is not necessary to provide switches in the middle of global bit lines, and no problem occurs when performing the restore operation by time division. Further, because a parasitic CR model of a first sense amplifier and that of a second sense amplifier become mutually the same, high sensitivity can be maintained.

Abstract: A stacked device includes a plurality of semiconductor chips connected to each other by through electrodes. The same number of through electrodes are included in each of paths extending from a first power source terminal through each of circuit elements formed for the semiconductor chips to a second power source terminal.

Abstract: A semiconductor device includes a sense amplifier circuit. The sense amplifier circuit includes a cross-coupled first transistor and second transistor that perform amplification. The sources of the cross-coupled transistors are respectively connected in series with a third transistor and a fourth transistor, and electrical current supply capability of the third and fourth transistors is controlled by a control voltage given to control electrodes of the third and fourth transistors. In a data retaining period, a minimum sub-threshold current necessary for retaining the data is flowed to the third and fourth transistors according to the control voltage, and bit line potential is maintained.

Abstract: The need for mediation operation is eliminated by adoption of a connection topology in which a circuit for executing one transmission (TR—00T), and a circuit for executing a plurality of receptions (TR—10R, TR—20R, TR—30R) are connected to one penetration-electrode group (for example, TSVGL—0). In order to implement the connection topology even in the case of piling up a plurality of LSIs one after another, in particular, a programmable memory element for designating respective penetration-electrode ports for use in transmit, or for us in receive, and address allocation of the respective penetration-electrode ports is mounted in stacked LSIs.

Abstract: A semiconductor memory device includes: a sense amplifier; a plurality of memory cell arrays; a shared MOS transistor that connects/disconnects the sense amplifier and a bit line included in the memory cell arrays; and a control circuit that controls operation of the shared MOS transistor. A part or whole of an in-sense-amplifier bit line that is a bit line connecting the sense amplifier and the shared MOS transistor is embedded in a semiconductor substrate.

Abstract: A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogenide material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit.

Abstract: A semiconductor device includes a sense amplifier circuit. The sense amplifier circuit includes a cross-coupled first transistor and second transistor that perform amplification. The sources of the cross-coupled transistors are respectively connected in series with a third transistor and a fourth transistor, and electrical current supply capability of the third and fourth transistors is controlled by a control voltage given to control electrodes of the third and fourth transistors. In a data retaining period, a minimum sub-threshold current necessary for retaining the data is flowed to the third and fourth transistors according to the control voltage, and bit line potential is maintained.

Abstract: The semiconductor device comprises first and second memory cells, first and second bit lines connected to the first/second memory cells, first and second amplifiers connected to the second bit line, a local input/output line commonly connected to the first/second amplifiers, first and second local column switches connected between the first/second amplifiers and the local input/output line, a second local column switch connected between the second amplifier and the local input/output line, a column select line, a first global column switch connected between the column select line and the first local column switch and controlling a connection therebetween in response to a first select signal, and a second global column switch connected between the column select line and the second local column switch and controlling a connection therebetween in response to a first select signal.