Abstract: Provided are a thermosetting adhesive sheet and a method for manufacturing a semiconductor device capable of reducing semiconductor wafer warping and chipping. The thermosetting adhesive sheet includes a thermosetting adhesive layer containing a resin component and a filler, the resin component containing a (meth)acrylate and a polymerization initiator, the (meth)acrylate containing a solid (meth)acrylate and a trifunctional or higher functional (meth)acrylate, content of the solid (meth)acrylate in the resin component being 55 wt % or more; a total value obtained by multiplying the number of functional groups per unit molecular weight of the (meth)acrylate by content of the (meth)acrylate in the resin component being 2.7E-03 or more, and blending amount of the filler being 80 to 220 pts. mass with respect to 100 pts. mass of the resin component.

Abstract: A bump-forming film is used for forming, on a semiconductor device such as a bumpless IC chip, bumps which are low in cost and can achieve stable conduction reliability. The bump-forming film is configured such that conductive fillers for bumps are arranged regularly in a planar view in an insulating adhesive resin layer. The regular arrangement has a periodic repeating unit in the longitudinal direction of the film. The straight line which connects one ends of the conductive fillers for bumps in the thickness direction of the film is substantially parallel to the surface of the film.

Abstract: A protective tape that improves solder bonding properties and reduces wafer warping. The protective tape includes, in the following order, an adhesive agent layer, a first thermoplastic resin layer, a second thermoplastic resin layer, and a matrix film layer. The protective tape satisfies the conditions expressed by the following formulae (1) to (3): Ga>Gb??(1) Ta<Tb??(2) (Ga*Ta+Gb*Tb)/(Ta+Tb)?1.4E+06 Pa.??(3) Ga represents a shear storage modulus of the first thermoplastic resin layer at a pasting temperature at which the protective tape is pasted; Gb represents a shear storage modulus of the second thermoplastic resin layer at the pasting temperature at which the protective tape is pasted; Ta represents a thickness of the first thermoplastic resin layer; and Tb represents a thickness of the second thermoplastic resin layer.

Abstract: To provide an anisotropic conductive film, which contains conductive particles, wherein the anisotropic conductive film is an anisotropic conductive film configured to anisotropic conductively connect a terminal of a substrate with a terminal of an electronic component, wherein the conductive particles are conductive particles, in each of which a metal plated layer and an insulating layer are sequentially provided on a surface of a resin particle, or conductive particles, in each of which an insulating layer is provided on a metal particle, or both thereof, and wherein 3.0 to 10.0 conductive particles are linked together on average.

Abstract: Provided is a multilayer substrate obtained by laminating semiconductor substrates each having a trough electrode. The multilayer substrate has excellent conduction characteristics and can be manufactured at low cost. Conductive particles are each selectively present at a position where the through electrodes face each other as viewed in a plan view of the multilayer substrate. The multilayer substrate has a connection structure in which the facing through electrodes are connected by the conductive particles, and the semiconductor substrates each having the through electrode are bonded by an insulating adhesive.

Abstract: Provided is a multilayer substrate including laminated semiconductor substrates each having a penetrating hole (hereinafter referred to as through hole) having a plated film formed in the inner surface. The multilayer substrate has excellent conduction characteristics and can be manufactured at low cost. Conductive particles are selectively present at a position where the through holes face each other as viewed in a plan view of the multilayer substrate. The multilayer substrate has a connection structure in which the facing through holes are connected by the conductive particles, and the semiconductor substrates each having the through hole are bonded by an insulating adhesive.

Abstract: An anisotropic conductive film includes, as conductive particles for anisotropic conductive connection, metal particles such as solder particles having on the surface an oxide film. In this anisotropic conductive film, the metal particles are contained in an insulating film and regularly arranged as viewed in a plan view. A flux is disposed to be in contact with, or in proximity to, at least one of ends of the metal particles on a front surface side of the anisotropic conductive film and a rear surface side of the anisotropic conductive film. Preferable metal particles are solder particles. Preferably, the insulating film has a structure of two layers, and the metal particles are disposed between the two layers.

Abstract: The present invention provides an anisotropic electrically conductive film with a structure, in which electrically conductive particles are disposed at lattice points of a planar lattice pattern in an electrically insulating adhesive base layer. A proportion of the lattice points, at which no electrically conductive particle is disposed, with respect to all the lattice points of the planar lattice pattern assumed as a reference region, is less than 20%. A proportion of the lattice points, at which plural electrically conductive particles are disposed in an aggregated state, with respect to all the lattice points of the planar lattice pattern, is not greater than 15%. A sum of omission of the electrically conductive particle and an aggregation of the electrically conductive particles is less than 25%.

Abstract: A protective tape and a method for manufacturing a semiconductor device using the same capable of achieving excellent connection properties. The protective tape includes an adhesive layer, a thermoplastic resin layer and a backing material film in that order; a modulus ratio of a shear storage modulus of the adhesive layer to a shear storage modulus of the thermoplastic resin layer at an application temperature at which the protective tape is applied is 0.01 or less. This suppresses resin residue on bumps thereby achieving excellent connection properties.

Abstract: An anisotropic conductive film contains conductive particles and spacers. The spacers are arranged at a central part of the film in a width direction. The central part of the film in the width direction represents 20 to 80% of the overall width of the film. The height of the spacers in the thickness direction of the anisotropic conductive film is larger than 5 ?m and less than 75 ?m. Such an anisotropic conductive film has a layered structure having a first insulating adhesion layer and a second insulating adhesion layer, wherein the conductive particles are dispersed in the first insulating adhesion layer, and the spacers are regularly arranged on a surface of the first insulating adhesion layer on a side of the second insulating adhesion layer.

Abstract: A protective tape and a method for manufacturing a semiconductor device using the same capable of achieving excellent connection properties. The protective tape includes an adhesive layer, a thermoplastic resin layer and a backing material film in that order; a modulus ratio of a shear storage modulus of the adhesive layer to a shear storage modulus of the thermoplastic resin layer at an application temperature at which the protective tape is applied is 0.01 or less. This suppresses resin residue on bumps thereby achieving excellent connection properties.

Abstract: The present invention provides an anisotropic conductive material in which lower continuity resistance and higher adhesive strength are obtained, and a method for manufacturing the same. When a glass substrate and a metal wiring material are thermally compressed and bonded, in an interface between the glass substrate and an anisotropic conductive material, Si on a surface of the glass substrate reacts on an alkoxyl group (OR) at an end of disulfide silane modified by hydrophobic silica, and chemically binds thereto. Furthermore, at an interface between the metal wiring material and the anisotropic conductive material, a part of S—S bonds (disulfide bonds) in disulfide silane dissociates due to the heat at the time of thermocompression bonding, and the dissociated sulfide silane chemically binds to metal Me.

Abstract: The present invention is to provide an anisotropic conductive film that excels in dispersing conductive particles and trapping the particles, and maintains conduction reliability even between narrow-pitched terminals. By a method for manufacturing an anisotropic conductive film containing conductive particles, the conductive particles are buried in grooves in a sheet having the grooves regularly formed in the same direction, the conductive particles are arranged, a first resin film having a thermo-setting resin layer formed on a stretchable base film is laminated on the surface of the sheet on the side of the grooves to transfer and attach the conductive particles to the first resin film, the first resin film is uniaxially stretched in a direction other than the direction perpendicular to the array direction of the conductive particles, and a second resin film is laminated.

Abstract: A connecting film which electrically connects a first circuit member with a second circuit member having a nitrogen atom-containing film on a surface thereof facing the first circuit member, the connecting film including a first layer which is to be located at the first circuit member side, and a second layer which is to be located at the second circuit member side, wherein the first layer contains a cationic curing agent and an epoxy resin, and the second layer contains a radical curing agent, an acrylic resin and an epoxy compound, wherein one of the first layer and the second layer is a conductive particle-containing organic resin layer, and the other layer is an insulating organic resin layer containing no conductive particles, and wherein the minimum melt viscosity of the conductive particle-containing organic resin layer is ten times or more greater than that of the insulating organic resin layer.

Abstract: To provide a conductive particle, which contains a core particle, and a conductive layer formed on a surface of the core particle, where the core particle is formed of a resin, or a metal, or both thereof, and the conductive layer contains a phosphorus-containing hydrophobic group at a surface thereof.

Abstract: A method for producing a joined structure, the method involving pressure-bonding first and second circuit members together via an anisotropic conductive film while the circuit members are being heated, to thereby join the circuit members with each other. The anisotropic conductive film electrically connects the first circuit member with the second circuit member having a nitrogen atom-containing film on a surface facing the first circuit member, wherein the anisotropic conductive film, the first layer and the second layer are further defined including the provisions that at least one of the first and second layers includes conductive particles, and the difference in maximum exothermic peak temperature between the first and second layers is within the range up to 20° C.

Abstract: To provide a conductive particle, containing: a core particle; and a conductive layer formed on a surface of the core particle, wherein the core particle is a nickel particle, and wherein the conductive layer is a nickel plating layer a surface of which has a phosphorous concentration of 10% by mass or lower, and the conductive layer has an average thickness of 1 nm to 10 nm.

Abstract: An adhesive film, containing a first adhesive layer in which conductive particles are dispersed, and a second adhesive layer adhered to the first adhesive layer, wherein the lowest viscosity of the first adhesive layer attained at or below the curing temperature is higher than that of the second adhesive layer attained at or below the curing temperature, where the curing temperature is a temperature at which the adhesive layer starts to cure, wherein the first and second adhesive layers are respectively disposed to a substrate side and an electronic part side, and the adhesive film is configured to join the electronic part and the substrate by heating and pressurizing the substrate and the electronic part with the adhesive layer being therebetween, and wherein the first adhesive layer has a thickness which is less than two times of an average particle diameter of the conductive particles.

Abstract: To provide an anisotropic conductive film, which contains conductive particles, wherein the anisotropic conductive film is an anisotropic conductive film configured to anisotropic conductively connect a terminal of a substrate with a terminal of an electronic component, wherein the conductive particles are conductive particles, in each of which a metal plated layer and an insulating layer are sequentially provided on a surface of a resin particle, or conductive particles, in each of which an insulating layer is provided on a metal particle, or both thereof, and wherein 3.0 to 10.0 conductive particles are linked together on average.

Abstract: A method for producing a joined structure involving pressure-bonding a first circuit member and a second circuit member together via a connecting film while the circuit members are being heated, to thereby join the circuit members with each other, wherein the connecting film is defined and includes first and second layers wherein one of the first layer and the second layer is a conductive particle-containing organic resin layer, and the other layer is an insulating organic resin layer containing no conductive particles, and wherein the minimum melt viscosity of the conductive particle-containing organic resin layer is ten times or more greater than the minimum melt viscosity of the insulating organic resin layer.