Abstract: A block of dynamic memory in a DRAM device is organized to share a common set of bitlines may be erased/destroyed/randomized by concurrently activating multiple (or all) of the wordlines of the block. The data held in the sense amplifiers and cells of an active wordline may be erased by precharging the sense amplifiers and then writing precharge voltages into the cells of the open row. Rows are selectively configured to either be refreshed or not refreshed. The rows that are not refreshed will, after a time, lose their contents thereby reducing the time interval for attack. An external signal can cause the isolation of a memory device or module and initiation of automatic erasure of the memory contents of the device or module using one of the methods disclosed herein. The trigger for the external signal may be one or more of temperature changes/conditions, loss of power, and/or external commands from a controller.

Abstract: First data is read out of a core storage array of a memory component over a first time interval constrained by data output bandwidth of the core storage array. After read out from the core storage array, the first data is output from the memory component over a second time interval that is shorter than the first time interval and that corresponds to a data transfer bandwidth greater than the data output bandwidth of the core storage array.

Abstract: A multi-chip package with signal line compression for testing of the multi-chip package. The multi-chip package includes an interposer and two or more integrated circuits attached to the interposer. The interposer includes multiple data signal lines for data communications between the two integrated circuits. The data signal lines are also coupled to one or more test contacts through an interface circuit. The number of test contacts is smaller than the number of signal lines, which allows a large number of signal lines to be tested with a smaller number of test contacts.

Abstract: A multi-chip package with signal line compression for testing of the multi-chip package. The multi-chip package includes an interposer and two or more integrated circuits attached to the interposer. The interposer includes multiple data signal lines for data communications between the two integrated circuits. The data signal lines are also coupled to one or more test contacts through an interface circuit. The number of test contacts is smaller than the number of signal lines, which allows a large number of signal lines to be tested with a smaller number of test contacts.

Abstract: A method and circuit for controlling an output reference voltage generated by a reference voltage generator disposed on a memory device are provided. A signal for enabling a clocked standby mode of the memory device is received. If the signal indicates that the memory device is in the clocked standby mode, a first reference voltage is generated as the output reference voltage of the reference voltage generator using a first voltage. If the signal indicates that the memory device is not in the clocked standby mode, a second reference voltage is generated as the output reference voltage of the reference voltage generator using a second voltage.

Abstract: A receiver for use in a device such as a memory device is provided. The receiver circuit is located on the same integrated circuit as a temperature sensor (or other sensor). A data receiver and strobe receiver are coupled to the temperature sensor. A flip-flop receives a data input from the data receiver and this data input is latched based upon the strobe receiver. In the preferred embodiment, the timing of these inputs is controlled, at least in part, by the temperature sensor output.

Abstract: A receiver for use in a device such as a memory device is provided. The receiver circuit is located on the same integrated circuit as a temperature sensor (or other sensor). A data receiver and strobe receiver are coupled to the temperature sensor. A latch receives a data input from the data receiver and this data input is latched based upon the strobe receiver. In the preferred embodiment, the timing of these inputs is controlled, at least in part, by the temperature sensor output.

Abstract: A memory device capable of performing a read operation includes: a memory array that stores data; and off-chip drivers that supply as an output of the memory device data retrieved from the memory array. At least one of the off-chip drivers includes: an enable circuit that generates an enable signal in response to a read enable signal received by the off-chip driver, wherein the enable circuit controls the timing of the enable signal in accordance with a timing signal supplied to the enable circuit; and a driver circuit that drives the data off the memory device in response to the enable signal.

Abstract: A method and apparatus for controlling a voltage generator of a memory device are provided. A temperature of the memory device is measured. If the measured temperature is outside a threshold temperature range, the memory device is allowed to be placed in a clocked standby mode (CSM), whereby the voltage generator is selectively enabled with a clock signal. If the measured temperature is within a threshold temperature range, the memory device is prevented from being placed in the clocked standby mode (CSM).

Abstract: A method and circuit for controlling an output reference voltage generated by a reference voltage generator disposed on a memory device are provided. A signal for enabling a clocked standby mode of the memory device is received. If the signal indicates that the memory device is in the clocked standby mode, a first reference voltage is generated as the output reference voltage of the reference voltage generator using a first voltage. If the signal indicates that the memory device is not in the clocked standby mode, a second reference voltage is generated as the output reference voltage of the reference voltage generator using a second voltage.

Abstract: A method and apparatus for controlling a voltage generator of a memory device are provided. A temperature of the memory device is measured. If the measured temperature is outside a threshold temperature range, the memory device is allowed to be placed in a clocked standby mode (CSM), whereby the voltage generator is selectively enabled with a clock signal. If the measured temperature is within a threshold temperature range, the memory device is prevented from being placed in the clocked standby mode (CSM).

Abstract: An integrated circuit includes a core memory array and a test mode compression circuit. The test mode compression circuit receives test mode data from the core memory array. A multiplexer receives read data from the core memory array and test mode data from the test mode compression circuit. The multiplexer receives a test mode compression signal and selectively transfers one of the read data and the test mode data dependent at least in part upon the test mode compression signal.

Abstract: Techniques and apparatus to reduce duty cycle distortion in DRAM devices caused by process variations are provided. By dividing the undelayed output signal from the data receivers into two separate paths and providing independently adjustable delay blocks in each path leading to the rising and falling edge data latches, the setup and/or hold timing margins may be adjusted.

Abstract: A memory device capable of performing a read operation includes: a memory array that stores data; and off-chip drivers that supply as an output of the memory device data retrieved from the memory array. At least one of the off-chip drivers includes: an enable circuit that generates an enable signal in response to a read enable signal received by the off-chip driver, wherein the enable circuit controls the timing of the enable signal in accordance with a timing signal supplied to the enable circuit; and a driver circuit that drives the data off the memory device in response to the enable signal.

Abstract: A power down is implemented in a memory device capable of performing a read operation in which data and a data strobe signal are supplied as outputs. The power down techniques includes generating a first signal for preventing the data from being supplied as an output of the memory device, generating a second signal for causing the data strobe signal to remain in a predetermined state, and generating a third signal for preventing the data strobe signal in the predetermined state from being supplied as an output of the memory device.

Abstract: A random access memory includes a control circuit configured to receive a strobe signal and generate a pulse after one edge of the strobe signal and before the next edge of the strobe signal for each cycle of a clock signal and a latch circuit configured to receive the strobe signal and the pulse. The latch circuit is configured to latch data signals into the latch circuit with the strobe signal and to receive the pulse to prevent post-amble noise on the strobe signal from latching other signals into the latch circuit.

Abstract: A power down is implemented in a memory device capable of performing a read operation in which data and a data strobe signal are supplied as outputs. The power down techniques includes generating a first signal for preventing the data from being supplied as an output of the memory device, generating a second signal for causing the data strobe signal to remain in a predetermined state, and generating a third signal for preventing the data strobe signal in the predetermined state from being supplied as an output of the memory device.

Abstract: A random access memory includes a first circuit configured to receive a strobe signal and provide pulses in response to transitions in the strobe signal, and a second circuit configured to receive the strobe signal to latch data into the second circuit in response to the strobe signal, and to receive the pulses to re-latch the latched data into the second circuit after the transitions in the strobe signal. The first circuit includes an enable circuit configured to provide an enable signal and a buffer circuit configured to receive the strobe signal and the enable signal and provide the pulses in response to the enable signal and the strobe signal. The enable circuit is configured to receive the pulses from the buffer circuit and stop providing the enable signal to the buffer circuit in response to receiving the pulses.

Abstract: A method of self-repair for a DRAM integrated circuit includes internally generating a bit pattern and writing the pattern to an array of memory cells within the integrated circuit. The DRAM integrated circuit reads from the array and internally compares the read data with the generated pattern to determine addresses for failed memory cells. The DRAM integrated circuit sets internal soft fuses that record the addresses of the failed memory cells and provide substitute memory cells for the failed memory cells from a redundant memory portion of the array. The self-repair process occurs each time the DRAM integrated circuit is powered up, thus permitting the integrated circuit to adapt to failures when installed in electronic devices and lessening the need for repair during manufacturing.

Abstract: A delay locked loop includes a delay unit with a controllable delay time. Switching elements are provided in order to tap off output signals from the delay elements of the delay unit. Two nodes connected to the switching elements are connected to a multiplexer configuration in order to activate in each case two of the switching elements that are connected to delay elements connected directly in succession. A phase interpolator generates an intermediate phase from the signals provided.