Abstract: An integrated memory is described which has a memory cell array with column lines and row lines. A row access controller serves for activating one of the row lines and for controlling a deactivation operation. An input of a control unit is connected to a signal terminal for a signal that, in the event of a read access to one of the memory cells, defines the beginning of data outputting to a point outside the memory cell array. The data output is synchronized with a clock signal. In this case, the signal is adjustable depending on an operating frequency of the memory. An output signal of the control unit serves for triggering the deactivation operation of one of the row lines after a write access. Therefore, in the event of a write access, a comparatively high data throughput is possible even at different operating frequencies of the integrated memory.

Abstract: Integrated circuits, in particular memory chips of the DDR SDRAM type, are tested in a parallel manner. In order to prevent the circuits from being driven relative to one another during a test operation, an input terminal that is already connected to a channel of an automatic test machine anyway is connected to a switching device, by which the output drivers can be turned off in a manner dependent on the control signal that can be fed in at the input terminal. The switching device preferably contains a demultiplexer and also a multiplexer. The demultiplexer can be driven by a test control signal that is additionally generated besides the test control signal. The input terminal is connected to a tester channel anyway during test operation, with the result that no additional external outlay arises.

Abstract: A synchronous semiconductor memory containing dynamic memory cells has a delay locked loop in order to synchronize a clock signal which actuates data output drivers with an externally supplied clock signal. An updating of the delay locked loop is suppressed during a Read state of the semiconductor memory. An appropriate control signal is produced by a state machine and is supplied to the delay locked loop. The synchronization of the data output with the supplied clock signal can be achieved in a precise manner and requires only simple circuitry.

Abstract: A current mirror circuit has an input path, which has a current source and, connected in series therewith, a first transistor circuit with at least two transistors, wherein one of the transistors can be connected in parallel with the other of the transistors. In an output path, which has a second transistor circuit with at least two transistors, one of the transistors can be connected in parallel with the other of the transistors. The control terminals of the transistors of the first and second transistor circuits can be connected to the input path. As a result, the current mirror circuit can be changed over between two operating modes with a different current requirement with comparatively short changeover times.

Abstract: A circuit configuration includes two signal path sections that are used to program the delay of a signal path, in particular in DRAMs. The two signal path sections have different delays and can be driven in parallel at the input end. The two signal path sections can be connected to an output terminal via a multiplexer. A selection circuit includes two signal path sections which are connected between supply voltage potentials. The selection circuit has two complimentary transistors which are connected in series and has source-end programmable elements. These transistors can be driven by complimentary control signals. This permits the delay to be programmed flexibly with little expenditure on circuitry.

Abstract: The voltage pump for generating a boosted output voltage has a switch-on control circuit. The switch-on control includes a transistor that is connected between a terminal for feeding in a supply voltage and the terminal for tapping off the boosted output voltage. After the voltage pump has started to operate, the boosted output voltage is decoupled from the supply voltage by the transistor. A changeover switch forwards the respective higher of the output voltage or supply voltage to the substrate terminal and gate terminal of the transistor. The switch-on control enables early provision of a boosted output voltage in conjunction with reliable start-up operation of the voltage pump, while the additional outlay on circuitry is minimized.

Abstract: A memory chip with a short data access time limits the propagation time of a bit on local data line strips which are far away from output amplifiers by centering switches with respect to a center of the cell array strips, wherein the switches are junction points between local data lines and main data lines.

Abstract: DDR SDRAM memory chips require a highly precise output clock signal in order to pass the stored data onto a data highway at the correct instant. This signal is generated by a symmetrical circuit configuration that, by virtue of the integration of a multiplexer in a clock ratio compensator, additionally generates the output clock signal in a minimal time.

Abstract: A phase regulator is connected, on the input side, to the output of a phase comparator and generates a control signal in a manner dependent on the phase difference ascertained by said comparator. Updating of the control signal fed to a control input of a first delay unit is triggered by an edge of the first output clock signal occurring at the clock output of the first delay unit.

Abstract: A memory chip with a short data access time limits the propagation time of a bit on local data line strips which are far away from output amplifiers by centering switches with respect to a center of the cell array strips, wherein the switches are junction points between local data lines and main data lines.

Abstract: DDR SDRAM memory chips require a highly precise output clock signal in order to pass the stored data onto a data highway at the correct instant. This signal is generated by a symmetrical circuit configuration that, by virtue of the integration of a multiplexer in a clock ratio compensator, additionally generates the output clock signal in a minimal time.

Abstract: The integrated circuit generates an output clock signal with a phase shift relative to a first clock signal. The currents IE=I1 and IL=I2 can be weighted differently by means of control signals. A different phase shift of the output clock signal results depending on the weighting.

Abstract: A voltage generator configuration includes a voltage generator which generates a second voltage from a first voltage using a reference voltage and which can be deactivated by using a deactivation signal. The voltage generator configuration is distinguished in that the deactivation signal is fed to the voltage generator over a line through which the reference voltage is also fed to the voltage generator.

Abstract: A memory has data lines through which data connections are connected to groups of memory cells via a synchronizing unit. The synchronizing unit is disposed adjacent to the cell group and has a clock input to which an internal clock signal is fed. In the event of a write access to the memory, the synchronizing unit synchronizes with the internal clock signal data signals that are fed via the data connections and are synchronous with an external clock signal.

Abstract: A memory has an input circuit, which is provided adjacent to two groups of memory cells and via which two global data lines are connected to two local data lines. The memory has two operating states during which it feeds the data provided on the global data lines in respective different assignments to the two local data lines.

Abstract: Data items D1, D2 read from memory cells MC are simultaneously buffer-stored in memory stages Si of a FIFO memory MEM and are read out again simultaneously from said FIFO memory at a later point in time. Output units OC1, OC2 serve for outputting, at a data output P, the first data D1 synchronously with positive edges of an external clock signal CLK and the second data D2 synchronously with negative edges of the external clock signal CLK.