Abstract: A semiconductor layer is formed on a substrate, and is formed with a semiconductor. The semiconductor can be, for example, a group III-V compound semiconductor. Further, in the semiconductor layer, a p-type p-region, an i-type i-region, and an n-type n-region, which form a pin junction in a planar direction of the substrate, are formed. A light absorbing layer is formed on the p-region of the semiconductor layer, and is formed with a p-type semiconductor. A contact layer is formed on the light absorbing layer, and is formed with a p-type semiconductor.

Abstract: Disclosed is a serum albumin-thioredoxin fusion body which is improved in the activity thereof and is stable with respect to the activity. The serum albumin-thioredoxin fusion body is provided, which is characterized in that the thioredoxin is a modified from in which at least a cysteine residue located at position 73 from the N-terminal of an amino acid sequence for the thioredoxin or located at a position equivalent to the position 73 is substituted by another amino acid residue. the modified serum albumin-thioredoxin fusion body is superior in the activity and stability thereof, is reduced in immunogenicity and has superior safety compared with a fusion body in which the thioredoxin is non-modified form.

Abstract: A structure includes: a first member made of metal having a tubular shape, and having a through-insertion hole; a second member made of resin and joined to the first member; and a third member made of metal having a tubular shape, and inserted through inside the first member. The third member is tube-expanded toward the first member and joined to the first member by press-fitting.

Abstract: An optical characteristic inspection circuit includes, in order, an optical input element, an optical splitter circuit including a resistor, a first optical circuit to be inspected connected to one output of the optical splitter circuit, a second optical circuit to be inspected connected to another output of the optical splitter circuit, and a photodetector that detects an intensity of light transmitted through the first optical circuit to be inspected and an intensity of light transmitted through the second optical circuit to be inspected. Therefore, the present invention can provide an optical characteristic inspection circuit capable of reducing man-hours required for optical characteristic inspection.

Abstract: A joined body includes a tubular first member, and a second member including a plate-shaped wall portion in which a through-hole is formed, the first member being inserted into the through-hole. The collar member is interposed between the first member and the second member in at least a part of the hole peripheral wall of the through-hole. The first member and the second member are joined by expanding the first member at a portion corresponding to the through-hole.

Abstract: A bonding apparatus includes: a clamper able to clamp a wire between a pair of arms; a horn, in which a first through hole able to hold a capillary, and a second through hole adjacent to the first through hole and penetrating the horn in an up-down direction are further formed; and a bonding stage able to carry a workpiece. An alignment method for aligning a horn and a damper of a bonding apparatus with each other includes: disposing a mirror surface to be parallel to a bonding stage; aligning a mirror image of a second through hole reflected on the mirror surface with a center of the second through hole when the mirror surface is viewed through the second through hole; and aligning the damper based on a position of the mirror image and the horn.

Abstract: The invention provides a gold-supporting catalyst comprising gold nanoparticles and a carrier consisting of porous ceramic obtained by firing a mixture comprising an aluminum compound, a lime component, and a plastic clay containing 1% by mass or less of feldspars and quartz, wherein the gold nanoparticles are supported in an amount of 0.01 to 10 parts by mass on the carrier based on 100 parts by mass of the carrier.

Abstract: The aluminum alloy in the cross-section of the surface layer region of the aluminum alloy plate contains a compound containing one or more elements selected from the group consisting of silicon, magnesium, iron, copper, manganese, chromium, zinc, zirconium, and titanium, and aluminum. The number of fields of view containing the compound having an equivalent circle diameter of 5 ?m or more out of 10 fields of view extracted from the cross-section is 3 or less. In the cross-section, the number density of the compound having an equivalent circle diameter of 1.5 ?m or more and less than 5.0 ?m is 0.0010 per ?m2 or less, and the area ratio of the compound having an equivalent circle diameter of 0.5 ?m or more is 0.1% or more and less than 1.0%.

Abstract: A thermoelectric conversion device that includes an element body including a plurality of stacked; and a meandering wire inside the element body and that has a stacked structure. The meandering wire includes a thermoelectric material that has an anomalous Nernst effect, and a thermal conductivity of the plurality of stacked substrates is lower than that of the thermoelectric material. A thermoelectric conversion device that includes a winding core; and a winding wire wound around the winding core. The winding wire consists only of a thermoelectric material that has an anomalous Nernst effect. A thermoelectric conversion device that includes a plurality of substrates and meandering wires on main surfaces of the respective substrates. The meandering wires include a thermoelectric material that has an anomalous Nernst effect, and the substrates adjacent to each other are arranged at an angle that is larger than 0 degrees and smaller than 180 degrees.

Abstract: A composite material includes a plurality of first layers and a plurality of second layers. The total number of the first and second layers is 5 or more. The first and second layers are stacked alternately in the thickness direction of the composite material, such that the first layer is located at each of the first and second surfaces. The first layers are formed from a metal material containing copper as a main component. The second layer includes a molybdenum plate and a coper filler. The molybdenum plate has first and second faces that are each an end face in the thickness direction, and a plurality of openings extending through the molybdenum plate from the first face to the second face.

Abstract: In a pickup apparatus of a semiconductor die, a suction surface sucking a wafer sheet is a curved surface which is curved convexly upward, and after raising a stage to push up the wafer sheet, a control part creates a vacuum inside the stage to suck the wafer sheet to the suction surface, and after sucking the wafer sheet to the suction surface, the control part protrudes a moving element from the suction surface, and picks up a semiconductor die from the wafer sheet by a collet.

Abstract: A mounting apparatus for stacking and mounting two or more semiconductor chips at a plurality of locations on a substrate includes: a first mounting head for forming, at a plurality of locations on the substrate, temporarily stacked bodies in which two or more semiconductor chips are stacked in a temporarily press-attached state; and a second mounting head for forming chip stacked bodies by sequentially finally press-attaching the temporarily stacked bodies formed at the plurality of locations. The second mounting head includes: a press-attaching tool for heating and pressing an upper surface of a target temporarily stacked body to thereby finally press-attach the two or more semiconductor chips configuring the temporarily stacked body altogether; and one or more heat-dissipation tools having a heat-dissipating body which, by coming into contact with an upper surface of another stacked body positioned around the target temporarily stacked body, dissipates heat from the another stacked body.

Abstract: An aluminum alloy material comprising a composition containing no less than 1.2 at % and no more than 6.5 at % of Fe, no less than 0.15 at % and no more than 5 at % of at least one first element selected from the group consisting of Nd, W, and Sc, and no less than 0.005 at % and no more than 2 at % of at least one second element selected from the group consisting of C and B, the balance being Al and inevitable impurities.

Abstract: A mounting apparatus for stacking and mounting two or more semiconductor chips at a plurality of locations on a substrate includes: a first mounting head for forming, at a plurality of locations on the substrate, temporarily stacked bodies in which two or more semiconductor chips are stacked in a temporarily press-attached state; and a second mounting head for forming chip stacked bodies by sequentially finally press-attaching the temporarily stacked bodies formed at the plurality of locations. The second mounting head includes: a press-attaching tool for heating and pressing an upper surface of a target temporarily stacked body to thereby finally press-attach the two or more semiconductor chips configuring the temporarily stacked body altogether; and one or more heat-dissipation tools having a heat-dissipating body which, by coming into contact with an upper surface of another stacked body positioned around the target temporarily stacked body, dissipates heat from the another stacked body.

Abstract: An aluminum alloy having a composition including 0.1% by mass or more and 2.8% by mass or less of Fe; and 0.002% by mass or more and 2% by mass or less of Nd.

Abstract: An aluminum alloy material including 1.2 atom % or more and 6.5 atom % or less of Fe, and 0.005 atom % or more and less than 0.15 atom % of one or more elements selected from the group consisting of Nd, W, and Sc, with the balance being Al and unavoidable impurities.

Abstract: Provided is a mounting device in which two or more semiconductor chips are laminated and mounted at a plurality of locations on a substrate, said mounting device including: a stage that supports the substrate; a bonding part that laminates and mounts the plurality of semiconductor chips on the substrate while heating the plurality of semiconductor chips and the substrate; and a heat insulating member that is interposed between the stage and the substrate, said heat insulating member including a first layer which is in contact with the substrate and to which heat is applied from the bonding part via the semiconductor chips and the substrate, and a second layer which is disposed closer to the stage side than the first layer, wherein the first layer has a larger heat resistance than the second layer.

Abstract: Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and a rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to temperature of the NCF at various rates of temperature increase and a heating start temperature characteristic map that indicates changes in viscosity with respect to temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.

Abstract: A semiconductor mounting device for mounting chip components on a substrate, wherein the device is reduced in size. A semiconductor mounting device 10 comprises: a temporary placement stage 12 on which are loaded a plurality of chip components 30a, 30b, 30c; a conveyance head 14 that conveys the chip components 30a, 30b, 30c to the temporary placement stage 12, and also loads each of the chip components 30a, 30b, 30c on the temporary placement stage 12 so that the relative positions of the plurality of chip components 30a, 30b, 30c reach predetermined positions; a mounting stage 16 that secures a substrate 36 by suction; and a mounting head 18 that suctions the plurality of chip components 30a, 30b, 30c loaded on the temporary placement stage 12, and pressurizes while keeping the relative positions at prescribed positions on the substrate 36 that is secured by suction to the mounting stage 16.

Abstract: An aluminum alloy material has a composition containing 3% by mass or more and 10% by mass or less of Fe and the balance of Al and incidental impurities, and a structure including a matrix and a compound. The matrix is composed mainly of Al, the compound contains Al and Fe, and a relative density is 85% or more. In any cross section, the matrix has an average crystal grain size of 1,100 nm or less, and the compound has an average major-axis length of 100 nm or less.