Patents by Inventor Toru Matsuda
Toru Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240148839Abstract: Disclosed is a serum albumin-thioredoxin fusion body which is improved in the activity thereof and is stable with respect to the activity. The serum albumin-thioredoxin fusion body is provided, which is characterized in that the thioredoxin is a modified from in which at least a cysteine residue located at position 73 from the N-terminal of an amino acid sequence for the thioredoxin or located at a position equivalent to the position 73 is substituted by another amino acid residue. the modified serum albumin-thioredoxin fusion body is superior in the activity and stability thereof, is reduced in immunogenicity and has superior safety compared with a fusion body in which the thioredoxin is non-modified form.Type: ApplicationFiled: March 15, 2022Publication date: May 9, 2024Inventors: Junichi MATSUDA, Kento NISHIDA, Masaki HIRASHIMA, Toru MARUYAMA, Hiroshi WATANABE, Hitoshi MAEDA
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Patent number: 11965444Abstract: A controller for an internal combustion engine is configured to execute a determination process that determines that a deviation between a first change amount and a second change amount during a fuel cutoff operation is less than or equal to a threshold, and an anomaly diagnosing process that determines that an exhaust purification device is in a detached state when the determination process determines that the deviation is less than or equal to the threshold. The first change amount and the second change amount are change amounts per unit time of the temperature of exhaust gas on the upstream side and the downstream side of the exhaust purification device, respectively. The controller is configured to interrupt the determination process when the upstream-side temperature increases within a determination period.Type: GrantFiled: June 6, 2023Date of Patent: April 23, 2024Assignee: Toyota Jidosha Kabushiki KaishaInventors: Toru Yaeo, Yoshifumi Matsuda, Masashi Hakariya, Atsushi Morikawa, Ikuo Hoda, Noriyasu Adachi, Masanori Hayashi, Kenji Igawa
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Patent number: 11960225Abstract: An image forming apparatus includes, an image forming portion configured to form a toner image on a sheet using printing toner and apply powder adhesive on the sheet, a fixing portion configured to heat the toner image formed on the sheet and the powder adhesive applied on the sheet by the image forming portion and fix the toner image and the powder adhesive to the sheet, and a bonding portion configured to bond the sheet with the powder adhesive by reheating the sheet having been heated by the fixing portion. The bonding portion is arranged above the image forming portion.Type: GrantFiled: May 12, 2022Date of Patent: April 16, 2024Assignee: CANON KABUSHIKI KAISHAInventors: Koji Yamaguchi, Kohei Matsuda, Hiroki Ogino, Yasushi Katsuta, Kaori Noguchi, Junko Hirata, Akira Kuroda, Yuki Nishizawa, Tsutomu Shimano, Toru Oguma
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Patent number: 11936251Abstract: Assembly workability of an electric compressor to which an inverter circuit section and a filter circuit section are attached is improved. The inverter circuit section (3) includes an inverter control board (17), a sleeve assembly (18), and a power module (14). The inverter control board, the sleeve assembly, and the power module are integrated. The filter circuit section (4) includes a filter circuit board (66) and a support member (67). The filter circuit board (66) and the support member (67) are integrated. The inverter circuit section and the filter circuit section are structured to be capable of being stored each individually within an inverter storing section (8) from the same direction and detachably attached to the housing (2).Type: GrantFiled: January 21, 2019Date of Patent: March 19, 2024Assignee: SANDEN AUTOMOTIVE COMPONENTS CORPORATIONInventors: Mikio Kobayashi, Masataka Matsuda, Toru Yoshihara
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Publication number: 20240074482Abstract: Provided is a tobacco sheet having high swelling property for a non-combustion heating type flavor inhaler. The tobacco sheet for a non-combustion heating type flavor inhaler includes tobacco powder having a cumulative 90% particle size (D90) of 200 ?m or more in a volume-based particle size distribution measured by a dry laser diffraction method.Type: ApplicationFiled: October 24, 2023Publication date: March 7, 2024Applicant: Japan Tobacco Inc.Inventors: Akihiro KOIDE, Kimitaka UCHII, Takahiro MATSUDA, Ayaka HASHIMOTO, Manabu YAMADA, Hiroshi SHIBUICHI, Tetsuya MOTODAMARI, Toru SAKURAI
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Patent number: 11393837Abstract: A first region includes a memory cell transistor. A second region is adjacent to the first region in a first direction, and includes first and second subregions aligned in a second direction. First members include a portion extending along the first direction, and are provided in the first subregion. The first members are arranged in such a manner that the first members aligned in the second direction in an n-th row and an (n+1)-th row, counted from a side of the second subregion, are shifted in the first direction. The first members adjacent to each other in the second direction are arranged in such a manner that portions extending in the first direction face each other.Type: GrantFiled: March 6, 2020Date of Patent: July 19, 2022Assignee: Kioxia CorporationInventor: Toru Matsuda
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Patent number: 11387251Abstract: A memory device includes a substrate, first, second, and third conductive layers, a stack of fourth conductive layers, a memory pillar, and an insulator. The first, second, and third conductive layer are provided above the substrate. The stack of fourth conductive layers is provided above the third conductive layer. The memory pillar extends in the thickness direction through the stack and the third conductive layer and into the second conductive layer in a first region of the memory device. The insulator extends in a thickness direction through the stack, the third conductive layer, and the second conductive layer in a second region of the memory device. The insulator also extends in a second surface direction of the substrate. A thickness of the third conductive layer in a region through which the insulator extends is greater than a thickness of the third conductive layer in the first region.Type: GrantFiled: February 25, 2020Date of Patent: July 12, 2022Assignee: KIOXIA CORPORATIONInventors: Shigeki Kobayashi, Toru Matsuda, Hanae Ishihara
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Publication number: 20220020769Abstract: A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.Type: ApplicationFiled: October 1, 2021Publication date: January 20, 2022Applicant: Toshiba Memory CorporationInventors: Tadashi Iguchi, Murato Kawai, Toru Matsuda, Hisashi Kato, Megumi Ishiduki
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Patent number: 11152391Abstract: A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.Type: GrantFiled: August 14, 2020Date of Patent: October 19, 2021Assignee: Toshiba Memory CorporationInventors: Tadashi Iguchi, Murato Kawai, Toru Matsuda, Hisashi Kato, Megumi Ishiduki
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Publication number: 20210082939Abstract: A first region includes a memory cell transistor. A second region is adjacent to the first region in a first direction, and includes first and second subregions aligned in a second direction. First members include a portion extending along the first direction, and are provided in the first subregion. The first members are arranged in such a manner that the first members aligned in the second direction in an n-th row and an (n+1)-th row, counted from a side of the second subregion, are shifted in the first direction. The first members adjacent to each other in the second direction are arranged in such a manner that portions extending in the first direction face each other.Type: ApplicationFiled: March 6, 2020Publication date: March 18, 2021Applicant: Kioxia CorporationInventor: Toru MATSUDA
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Publication number: 20210082947Abstract: A memory device includes a substrate, first, second, and third conductive layers, a stack of fourth conductive layers, a memory pillar, and an insulator. The first, second, and third conductive layer are provided above the substrate. The stack of fourth conductive layers is provided above the third conductive layer. The memory pillar extends in the thickness direction through the stack and the third conductive layer and into the second conductive layer in a first region of the memory device. The insulator extends in a thickness direction through the stack, the third conductive layer, and the second conductive layer in a second region of the memory device. The insulator also extends in a second surface direction of the substrate. A thickness of the third conductive layer in a region through which the insulator extends is greater than a thickness of the third conductive layer in the first region.Type: ApplicationFiled: February 25, 2020Publication date: March 18, 2021Inventors: Shigeki KOBAYASHI, Toru MATSUDA, Hanae ISHIHARA
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Publication number: 20200373327Abstract: A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.Type: ApplicationFiled: August 14, 2020Publication date: November 26, 2020Applicant: Toshiba Memory CorporationInventors: Tadashi IGUCHI, Murato Kawai, Toru Matsuda, Hisashi Kato, Megumi Ishiduki
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Patent number: 10510764Abstract: According to one embodiment, a semiconductor device includes a stacked body, first, second, third, and fourth insulating bodies, first and second columnar portions. The stacked body includes a conductive layer and an insulating layer stacked alternately. The first, second, third and fourth insulating bodies, the first and second columnar portions are provided inside the stacked body. The second insulating body is at a position different from the first insulating body. The third insulating body is between the first and second insulating bodies. The fourth insulating body is between the first and second insulating bodies, and includes portions contacting the third insulating body and being separated from each other with the third insulating body interposed. The first columnar portion is between the first and fourth insulating bodies. The second columnar portion is between the second and fourth insulating bodies. The first and second columnar portions include a semiconductor layer.Type: GrantFiled: April 9, 2018Date of Patent: December 17, 2019Assignee: Toshiba Memory CorporationInventors: Masayoshi Tagami, Ryota Katsumata, Toru Matsuda, Yu Hirotsu, Naoki Yamamoto
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Patent number: 10404785Abstract: A method of controlling user information for an information processing apparatus includes the steps of a process of an application program requesting user information controlling unit to obtain an item of said user information, and said user information controlling unit providing the obtained item of said user information to said process. The user information controlling unit obtains the user information requested by the process of an application program and provides the user information to the process. Accordingly, the user information can be shared by the application programs and centrally controlled.Type: GrantFiled: March 23, 2015Date of Patent: September 3, 2019Assignee: RICOH COMPANY, LTD.Inventor: Toru Matsuda
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Patent number: 10275695Abstract: An information processing apparatus that includes a plurality of communicating units, and that is capable of performing at least one function, includes an identifying unit and a processing unit. The identifying unit identifies the communicating unit connected to an external device. The processing unit performs processing corresponding to the communicating unit identified by the identifying unit, by using correspondence information that indicates correspondence between the communicating unit and regulation information.Type: GrantFiled: June 3, 2015Date of Patent: April 30, 2019Assignee: RICOH COMPANY, LTD.Inventor: Toru Matsuda
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Publication number: 20190096899Abstract: According to one embodiment, a semiconductor device includes a stacked body, first, second, third, and fourth insulating bodies, first and second columnar portions. The stacked body includes a conductive layer and an insulating layer stacked alternately. The first, second, third and fourth insulating bodies, the first and second columnar portions are provided inside the stacked body. The second insulating body is at a position different from the first insulating body. The third insulating body is between the first and second insulating bodies. The fourth insulating body is between the first and second insulating bodies, and includes portions contacting the third insulating body and being separated from each other with the third insulating body interposed. The first columnar portion is between the first and fourth insulating bodies. The second columnar portion is between the second and fourth insulating bodies. The first and second columnar portions include a semiconductor layer.Type: ApplicationFiled: April 9, 2018Publication date: March 28, 2019Applicant: Toshiba Memory CorporationInventors: Masayoshi Tagami, Ryota Katsumata, Toru Matsuda, Yu Hirotsu, Naoki Yamamoto
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Publication number: 20190074294Abstract: A semiconductor memory device according to an embodiment includes a memory cell array configured to have a memory string obtained by connecting first selection transistors, memory transistors, and second selection transistors in series. When three directions crossing each other are set to first, second, and third directions, respectively, the memory cell array has first conductive layers to be control gates of the first selection transistors, second conductive layers to be control gates of the memory transistors, and third conductive layers to be control gates of the second selection transistors, which are laminated in the third direction. Ends of the first conductive layers and ends of the third conductive layers are formed in shapes of steps extending in the first direction and ends of the second conductive layers are formed in shapes of steps extending in both directions of the first direction and the second direction.Type: ApplicationFiled: November 7, 2018Publication date: March 7, 2019Applicant: Toshiba Memory CorporationInventors: Tadashi IGUCHI, Murato Kawai, Toru Matsuda, Hisashi Kato, Megumi Ishiduki
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Patent number: 10147735Abstract: A semiconductor memory device according to an embodiment includes a memory cell array configured to have a memory string obtained by connecting first selection transistors, memory transistors, and second selection transistors in series. When three directions crossing each other are set to first, second, and third directions, respectively, the memory cell array has first conductive layers to be control gates of the first selection transistors, second conductive layers to be control gates of the memory transistors, and third conductive layers to be control gates of the second selection transistors, which are laminated in the third direction. Ends of the first conductive layers and ends of the third conductive layers are formed in shapes of steps extending in the first direction and ends of the second conductive layers are formed in shapes of steps extending in both directions of the first direction and the second direction.Type: GrantFiled: September 10, 2015Date of Patent: December 4, 2018Assignee: TOSHIBA MEMORY CORPORATIONInventors: Tadashi Iguchi, Murato Kawai, Toru Matsuda, Hisashi Kato, Megumi Ishiduki
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Publication number: 20170256563Abstract: A semiconductor memory device includes electrode layers stacked on a conductive layer, and columnar bodies extending in the electrode layers in a stacked direction of the electrode layers. The electrode layers include a first electrode layer and a second electrode layer positioned between the first electrode layer and the conductive layer. The columnar bodies include a first columnar body and a second columnar body. The first columnar body includes a first semiconductor layer extending in the stacked direction through the first electrode, a semiconductor body provided between the first semiconductor layer and the conductive layer, and a first insulating layer extending along the first semiconductor layer. The second columnar body includes a second semiconductor layer extending in the stacked direction through at least the first electrode layer, and a second insulating layer extending in the stacked direction along the second semiconductor layer and extending through the second electrode layer.Type: ApplicationFiled: September 16, 2016Publication date: September 7, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Toru MATSUDA, Hironobu Hamanaka, Tatsuo Ishida, Junya Fujita, Satoshi Kakinuma
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Patent number: 9711528Abstract: According to an embodiment, a semiconductor memory device comprises a first region, a second region, and a third region. The first region includes: a part of a stacked body that includes a plurality of conductive layers; and a memory columnar body which has its side surface covered by the stacked body and configures a memory string. The second region includes: a contact; a contact portion connected to the contact, of the conductive layer; and a plurality of first columnar bodies. The third region includes a second columnar body. In a plane parallel to the substrate, a total area of the second columnar body in a small region that has the same area as one or more contact portions, in the third region is larger than a total area of the first columnar body in the one or more contact portions.Type: GrantFiled: March 7, 2016Date of Patent: July 18, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Toru Matsuda, Kenichi Fujii