Abstract: An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of silver.

Abstract: A semiconductor device includes: a p-type semiconductor layer; an n-type semiconductor layer; a first electrode layer; a second electrode layer; and a control electrode layer. The first and second electrode layers are electrically connected such as to each operate at an identical potential. The first electrode layer is connected with a part of a surface of the second electrode layer which is opposite to a surface of the second electrode layer that is in contact with the p-type semiconductor layer. The second electrode layer is connected with a connection line which is a part of a peripheral line of a joint interface between the p-type semiconductor layer and the n-type semiconductor layer on an interface side between the second electrode layer and the p-type semiconductor layer, and is formed to be extended to a position on a control electrode layer side of the connection line.

Abstract: A device comprises a substrate, an n-layer and a p-layer, an n-electrode, and a p-electrode. A step is formed at an outer circumference of the device. A protective film is formed so as to continuously cover a side surface and a bottom surface of the step. A field plate electrode connected with the p-electrode is formed on the protective film. When a distance from the pn junction interface to the surface of the protective film on the bottom surface of the step is defined as h (?m), a dielectric constant of the protective film is defined as ?s, and a thickness of the protective film at the pn junction interface on the side surface of the step is defined as d (?m), (?s·h)/d is 4 or more, and ?s/d is 3 (1/?m) or more.

Abstract: A semiconductor device includes a first n-type semiconductor layer, a p-type semiconductor layer, a second n-type semiconductor layer and a trench. The first n-type semiconductor layer includes a first interface and a second interface. The second interface forms an upper surface of a convex protruded from the first interface. The p-type semiconductor layer is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface. The first region is uniformly continuous with the second region. The second n-type semiconductor layer is stacked on the p-type semiconductor layer. The trench is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer.

Abstract: A semiconductor device includes; a semiconductor layer mainly made of GaN; a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; and an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer. The protective film includes: a first layer made of Al2O3 and arranged adjacent to the semiconductor layer; a second layer made of an electrical insulation material different from Al2O3 and formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The electrode is located inside of the opening structure.

Abstract: The invention is related to a device for detecting insulation degradation in an inverter-driven load device, in particular a motor, the device including: zero-phase current measuring means for measuring a zero-phase current in power-feed lines, provided in the power-feed lines between an inverter device and the motor; and command control means for putting rotation of the motor on standby; wherein the zero-phase current measuring means measures the total of phase currents fed into respective phases so as not to rotate a shaft even when an external force is applied to the shaft during the rotation being on standby, whereby allowing regular detection of insulation degradation without switching over the power-feed lines connected with the load device.

Abstract: A semiconductor device includes: a p-type semiconductor layer; an n-type semiconductor layer connected with the p-type semiconductor layer; a first electrode layer formed on the n-type semiconductor layer; and a second electrode layer formed on the p-type semiconductor layer. The first electrode layer and the second electrode layer are electrically connected such as to each operate at an identical potential. The first electrode layer is connected with a connection line which is a part of a peripheral line of a joint interface between the p-type semiconductor layer and the n-type semiconductor layer on an interface side between the second electrode layer and the p-type semiconductor layer, with a surface of the p-type semiconductor layer and with at least a part of a surface of the second electrode layer which is opposite to a surface of the second electrode layer that is in contact with the p-type semiconductor layer.

Abstract: A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of: forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.

Abstract: [Problem] To provide: a bactericidal agent composition which can exhibit an excellent bactericidal effect in the presence of an organic substance and against biofilms; a method for producing the bactericidal agent composition; and a sterilization method using the bactericidal agent composition. [Solution] A bactericidal agent composition which comprises water containing ultrafine bubbles having a most frequent particle diameter of 500 nm or less and a bactericidal component. Preferably, the density of most frequent particles of the ultrafine bubbles are 10,000 particles or more and the density of ultrafine bubbles each having a particle diameter of 1000 nm or less is 1,000,000 particles or more.

Abstract: [Problem] To provide: a bactericidal agent composition which can exhibit an excellent bactericidal effect in the presence of an organic substance and against biofilms; a method for producing the bactericidal agent composition; and a sterilization method using the bactericidal agent composition. [Solution] A bactericidal agent composition which comprises water containing ultrafine bubbles having a most frequent particle diameter of 500 nm or less and a bactericidal component. Preferably, the density of most frequent particles of the ultrafine bubbles are 10,000 particles or more and the density of ultrafine bubbles each having a particle diameter of 1000 nm or less is 1,000,000 particles or more.

Abstract: A semiconductor device includes: a p-type semiconductor layer mainly made of GaN; an n-type semiconductor layer mainly made of GaN and joined with the p-type semiconductor layer; a protective film arranged to coat the p-type semiconductor layer and the n-type semiconductor layer; a gate insulating film arranged to coat the p-type semiconductor layer and the n-type semiconductor layer; and a gate electrode joined with the gate insulating film. The protective film includes: a first layer made of Al2O3 and arranged adjacent to the p-type semiconductor layer and the n-type semiconductor layer to coat an edge of a p-n junction surface; a second layer made of an electrical insulation material different from Al2O3 and formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The gate insulating film is placed inside of the opening structure.

Abstract: A manufacturing method of a semiconductor device includes the steps of: forming a first electrode layer on a n-type semiconductor layer; forming a second electrode layer on a p-type semiconductor layer; and performing heat treatment for the first electrode layer and the second electrode layer formed on the semiconductor layers. Temperature of the heat treatment is not lower than 400 degrees centigrade and not higher than 650 degrees centigrade.

Abstract: The invention is related to an insulation deterioration diagnostic apparatus for an electric path connected between an inverter device and an inverter-driven load device, including: a zero-phase current transformer having an annular magnetic core, a magnetizing coil wound around the magnetic core, and a detecting coil wound around the magnetic core, the transformer being for detecting a zero-phase current of an electric path; a magnetization control circuit for supplying an alternating current having a frequency at least twice as high as a drive frequency of the load device to the magnetizing coil to magnetize the magnetic core; and a frequency extracting circuit for extracting a frequency component identical to the drive frequency fd, from the output signal of the detecting coil, whereby precisely measuring a current leaking from an inverter-driven load device over a wide range of frequencies.

Abstract: A method for producing a semiconductor device, includes forming a first carrier transport layer including a Group III nitride semiconductor, forming a mask on a region of the first carrier transport layer, selectively re-growing a second carrier transport layer on an unmasked region of the first carrier transport layer, the second carrier transport layer including a Group III nitride semiconductor, and selectively growing a carrier supply layer on the second carrier transport layer, the carrier supply layer including a Group III nitride semiconductor having a bandgap different from that of the Group III nitride semiconductor of the second carrier transport layer.

Abstract: A semiconductor device includes; a semiconductor layer mainly made of GaN; a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; and an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer. Tthe protective film includes: a first layer made of Al2O3 and arranged adjacent to the semiconductor layer; a second layer made of an electrical insulation material different from Al2O3 and formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The electrode is located inside of the opening structure.

Abstract: A semiconductor device includes: a p-type semiconductor layer mainly made of GaN; an n-type semiconductor layer mainly made of GaN and joined with the p-type semiconductor layer; a protective film arranged to coat the p-type semiconductor layer and the n-type semiconductor layer; a gate insulating film arranged to coat the p-type semiconductor layer and the n-type semiconductor layer; and a gate electrode joined with the gate insulating film. The protective film includes: a first layer made of Al2O3 and arranged adjacent to the p-type semiconductor layer and the n-type semiconductor layer to coat an edge of a p-n junction surface; a second layer made of an electrical insulation material different from Al2O3 and formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The gate insulating film is placed inside of the opening structure.

Abstract: [Problem] To provide: a bactericidal agent composition which can exhibit an excellent bactericidal effect in the presence of an organic substance and against biofilms; a method for producing the bactericidal agent composition; and a sterilization method using the bactericidal agent composition. [Solution] A bactericidal agent composition which comprises water containing ultrafine bubbles having a most frequent particle diameter of 500 nm or less and a bactericidal component. Preferably, the density of most frequent particles of the ultrafine bubbles are 10,000 particles or more and the density of ultrafine bubbles each having a particle diameter of 1000 nm or less is 1,000,000 particles or more.

Abstract: An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of copper.

Abstract: An electrode used in contact with an insulator comprises a layer mainly consisting of aluminum (Al) and a titanium nitride (TiN) layer that is placed between the layer mainly consisting of aluminum (Al) and the insulator and is arranged in contact with the layer mainly consisting of aluminum (Al). A ratio of thickness of the layer mainly consisting of aluminum (Al) to thickness of the titanium nitride (TiN) layer is in a range of not less than 3.00 and not greater than 12.00.

Abstract: An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of silver.