Abstract: A semiconductor device includes a first n-type semiconductor layer, a p-type semiconductor layer, a second n-type semiconductor layer and a trench. The first n-type semiconductor layer includes a first interface and a second interface. The second interface forms an upper surface of a convex protruded from the first interface. The p-type semiconductor layer is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface. The first region is uniformly continuous with the second region. The second n-type semiconductor layer is stacked on the p-type semiconductor layer. The trench is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer.

Abstract: A semiconductor device comprises: a gate insulating film 190 stacked on a semiconductor layer 130; and a gate electrode layer 230 stacked on the gate insulating film 190 and provided to apply a voltage via the gate insulating film 190 for formation of a channel in the semiconductor layer 130. The gate insulating film 190 includes: a first insulation film 192 stacked on the semiconductor layer 130; and a second insulation film 194 between the first insulation film 192 and the gate electrode layer 230.

Abstract: A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of; forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.

Abstract: To provide a novel and stable protein composition, and a method for stabilizing the protein composition. A composition that contains protein and water containing ultra-fine air bubbles having a mode particle size of 500 nm or less, and a method for stabilizing a protein composition that involves mixing protein and water containing ultra-fine air bubbles having a mode particle size of 500 nm or less.

Abstract: A semiconductor device includes: a p-type semiconductor layer; an n-type semiconductor layer connected with the p-type semiconductor layer; a first electrode layer formed on the n-type semiconductor layer; and a second electrode layer formed on the p-type semiconductor layer. The first electrode layer and the second electrode layer are electrically connected such as to each operate at an identical potential. The second electrode layer is connected with at least a part of a surface of the first electrode layer which is opposite to a surface of the first electrode layer that is in contact with the n-type semiconductor layer.

Abstract: A semiconductor device includes: a p-type semiconductor layer; an n-type semiconductor layer connected with the p-type semiconductor layer; a first electrode layer formed on the n-type semiconductor layer; and a second electrode layer formed on the p-type semiconductor layer. The first electrode layer and the second electrode layer are electrically connected such as to each operate at an identical potential. The first electrode layer is connected with a connection line which is a part of a peripheral line of a joint interface between the p-type semiconductor layer and the n-type semiconductor layer on an interface side between the second electrode layer and the p-type semiconductor layer, with a surface of the p-type semiconductor layer and with at least a part of a surface of the second electrode layer which is opposite to a surface of the second electrode layer that is in contact with the p-type semiconductor layer.

Abstract: A manufacturing method of a semiconductor device includes the steps of: forming a first electrode layer on a n-type semiconductor layer; forming a second electrode layer on a p-type semiconductor layer; and performing heat treatment for the first electrode layer and the second electrode layer formed on the semiconductor layers. Temperature of the heat treatment is not lower than 400 degrees centigrade and not higher than 650 degrees centigrade.

Abstract: A semiconductor device includes: a p-type semiconductor layer; an n-type semiconductor layer; a first electrode layer; a second electrode layer; and a control electrode layer. The first and second electrode layers are electrically connected such as to each operate at an identical potential. The first electrode layer is connected with a part of a surface of the second electrode layer which is opposite to a surface of the second electrode layer that is in contact with the p-type semiconductor layer. The second electrode layer is connected with a connection line which is a part of a peripheral line of a joint interface between the p-type semiconductor layer and the n-type semiconductor layer on an interface side between the second electrode layer and the p-type semiconductor layer, and is formed to be extended to a position on a control electrode layer side of the connection line.

Abstract: Provided is an HEMT exhibiting a normally-off characteristic and low on-state resistance, which includes a first carrier transport layer; two separate second carrier transport layers formed of undoped GaN and provided on two separate regions of the first carrier transport layer; and carrier supply layers formed of AlGaN and respectively provided on the two separate second carrier transport layers. The second carrier transport layers and the carrier supply layers are respectively formed through crystal growth on the first carrier transport layer. The heterojunction interface between the second carrier transport layer and the carrier supply layer exhibits high flatness, and virtually no growth-associated impurities are incorporated in the vicinity of the heterojunction interface. Therefore, reduction in mobility of 2DEG is prevented, and on-state resistance is reduced.

Abstract: A method for producing a semiconductor device, includes forming a first carrier transport layer including a Group III nitride semiconductor, forming a mask on a region of the first carrier transport layer, selectively re-growing a second carrier transport layer on an unmasked region of the first carrier transport layer, the second carrier transport layer including a Group III nitride semiconductor, and selectively growing a carrier supply layer on the second carrier transport layer, the carrier supply layer including a Group III nitride semiconductor having a bandgap different from that of the Group III nitride semiconductor of the second carrier transport layer.

Abstract: A device comprises a substrate, an n-layer and a p-layer, an n-electrode, and a p-electrode. A step is formed at an outer circumference of the device. A protective film is formed so as to continuously cover a side surface and a bottom surface of the step. A field plate electrode connected with the p-electrode is formed on the protective film. When a distance from the pn junction interface to the surface of the protective film on the bottom surface of the step is defined as h (?m), a dielectric constant of the protective film is defined as ?s, and a thickness of the protective film at the pn junction interface on the side surface of the step is defined as d (?m), (?s·h)/d is 4 or more, and ?s/d is 3 (1/?m) or more.

Abstract: It is an object of this invention to provide an environmental biological allergen measurement method capable of simple and low-cost measurement of the amount of an environmental biological allergen without using anti-allergen antibodies or a special substrate, and to provide a simple biological allergen quantification kit for carrying out the method. The object can be achieved by a biological allergen measurement method characterized in that the amount of an environmental biological allergen is measured by bringing a test substance into contact with a water-soluble gel or aqueous solution containing a substrate of the protease of the environmental biological allergen, and by quantifying the physical change of the water-soluble gel or the aqueous solution caused by the effect of the protease contained in the test substance on the substrate.

Abstract: The present invention provides an extraction method that either does not use emulsifiers, organic solvents, and the like or can reduce the amount used of emulsifiers, organic solvents, and the like. In addition, the extraction method of present invention can also efficiently extract various components from various materials to be extracted, and can highly maintain potency and the like of the extracted components, in particular if the components are active agents. Furthermore, the extraction method of present invention has excellent safety. The extraction method of present invention is achieved by bringing materials to be extracted into contact with liquid containing ultra fine bubbles for extraction treatment. The ultra fine bubbles utilized during the extraction process preferably have a mode diameter of 500 nm or smaller and a concentration of 1,000,000 or more per 1 ml of liquid.

Abstract: The invention is related to an insulation deterioration diagnostic apparatus for an electric path connected between an inverter device and an inverter-driven load device, including: a zero-phase current transformer having an annular magnetic core, a magnetizing coil wound around the magnetic core, and a detecting coil wound around the magnetic core, the transformer being for detecting a zero-phase current of an electric path; a magnetization control circuit for supplying an alternating current having a frequency at least twice as high as a drive frequency of the load device to the magnetizing coil to magnetize the magnetic core; and a frequency extracting circuit for extracting a frequency component identical to the drive frequency fd, from the output signal of the detecting coil, whereby precisely measuring a current leaking from an inverter-driven load device over a wide range of frequencies.

Abstract: Disclosed are: a composition which enables the more effective development of the efficacy of a water-soluble drug in a solution containing the drug; and a dispersion in which a hydrophobic drug can be dispersed stably without requiring the use of any surfactant. Specifically disclosed are: a composition comprising ultra-fine bubbles having a mode particle size of 500 nm or less, a drug and water; and a process for producing a composition comprising ultra-fine bubbles having a mode particle size of 500 nm or less, a drug and water, which utilizes an ultra-fine bubble generation apparatus.

Abstract: The invention is related to a device for detecting insulation degradation in an inverter-driven load device, in particular a motor, the device including: zero-phase current measuring means for measuring a zero-phase current in power-feed lines, provided in the power-feed lines between an inverter device and the motor; and command control means for putting rotation of the motor on standby; wherein the zero-phase current measuring means measures the total of phase currents fed into respective phases so as not to rotate a shaft even when an external force is applied to the shaft during the rotation being on standby, whereby allowing regular detection of insulation degradation without switching over the power-feed lines connected with the load device.

Abstract: Provided is an HEMT exhibiting a normally-off characteristic and low on-state resistance, which includes a first carrier transport layer; two separate second carrier transport layers formed of undoped GaN and provided on two separate regions of the first carrier transport layer; and carrier supply layers formed of AlGaN and respectively provided on the two separate second carrier transport layers. The second carrier transport layers and the carrier supply layers are respectively formed through crystal growth on the first carrier transport layer. The heterojunction interface between the second carrier transport layer and the carrier supply layer exhibits high flatness, and virtually no growth-associated impurities are incorporated in the vicinity of the heterojunction interface. Therefore, reduction in mobility of 2DEG is prevented, and on-state resistance is reduced.

Abstract: An optical encoder for measuring a relative movement of a first scale plate and a second scale plate, comprises: a light source; a first scale plate which converts light from the light source into a cyclic light quantity distribution; a second scale plate which cyclically makes spatial modulation on the light beams from the first scale plate; a third scale plate having slits which allow the light beams from the second scale plate to pass therethrough; and a light-receiving element which receives the light beams from the third scale plate; a lens which converts light from the light source into substantially parallel light beams; and an optic array which converges or diffuses light beams in the direction of periodic change and generates a cyclic light quantity distribution on the first scale plate.

Abstract: A blood pressure monitoring apparatus which continuously estimates and monitors the blood pressure by using the pulse wave propagation time can accurately estimate the blood pressure. While an estimated blood pressure is continuously calculated by using the pulse wave propagation time, the correlation between the pulse wave propagation time and the interval between feature points contained in two consecutive heart beat waveforms of an electrocardiogram is monitored. If the correlation is reversed, the blood pressure is actually measured, and the estimated blood pressure is corrected on the basis of the difference between the estimated blood pressure and actually measured blood pressure.

Abstract: In an optical encoder comprising an optical scale in which a light transmission portion and a light non-transparent portion are arranged and an output pattern obtained by emitting an incident light functions as an optical code, a light source portion and a light detecting portion, the light non-transparent portion is constituted of at least one pair of inclined surfaces which are opposed in such a manner as to become farther away from each other towards the side where the incident light enters and set so that an incident angle of the optical axis of the incident light from the light source should not be smaller than a critical angle of incidence, and the light non-transparent portion is constructed so that the incident light which enters one inclined surface should be totally reflected thereon to enter the other inclined surface and then at least part of the incident light should be reflected on the other inclined surface, and a reflected light which is reflected on the other inclined surface should not enter