Abstract: There is provided an electrostatic latent image developing toner including a binder resin, a colorant, and a release agent, wherein the shape factor SF1 of the toner is within the range from 110 to 140, the volume average particle size of the toner is within the range from 1.2 ?m to 4.8 ?m, and the crystallinity of the release agent within the toner is within the range from 35 to 80. There is also provided a method for manufacturing such a toner.

Abstract: The present invention relates to an alternate combustion type regenerative radiant tube burner apparatus which comprises a circular plate positioned between a burner unit and a main combustion chamber, so that preheated secondary combustion air is fed through an opening of the circular plate to the main combustion chamber. The burner apparatus has the circular plate (10), an annular air throat (2), a cylindrical peripheral cover (30) and a heat-transfer tube (11,16). A front end portion of the peripheral cover is integrally connected with a peripheral edge portion of the circular plate so as to prevent the secondary combustion air of the air throat from leaking on a periphery of the circular plate to the air diluting chamber (3). According to the present invention, the concentration of nitrogen oxides in the combustion exhaust gas can be definitely prevented from increasing, without being affected by the installation condition or thermal deformation of the radiant tube burner apparatus.

Abstract: The present invention provides an electrostatic latent image developing toner including a binding resin having an acidic polar group, a magnetic powder, and a carboxylic acid group-containing compound, the toner having a shape factor (SF1) of 110 to 140, wherein the carboxylic acid group-containing compound has a weight-average molecular weight of 1800 to 50,000 and an acid value of 150 to 600 mg KOH/g.

Abstract: The present invention provides a fuel feeding apparatus and method for improving the controllability of mixing process and mixing ratio of fuel and combustion air, and a combustion system and method for effecting new combustion properties. The fuel feeding apparatus of the combustion system has fuel feeding means, combustion gas extraction means, steam supply means, mixing means and fuel gas introduction means. The combustion gas extraction means extracts combustion gas of a combustion area therefrom. The mixing means mixes the fuel of fuel feeding means with at least one of combustion gas extracted from the furnace and steam of a steam generator. The fuel gas introduction means introduces a mixed fluid of combustion gas, steam and fuel to the combustion area as a fuel gas, and allows the fuel gas to be mixed with the combustion air.

Abstract: A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber, and forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas.

Abstract: The present invention provides a fuel feeding apparatus and method for improving the controllability of mixing process and mixing ratio of fuel and combustion air, and a combustion system and method for effecting new combustion properties. The fuel feeding apparatus of the combustion system has fuel feeding means, combustion gas extraction means, steam supply means, mixing means and fuel gas introduction means. The combustion gas extraction means extracts combustion gas of a combustion area therefrom. The mixing means mixes the fuel of fuel feeding means with at least one of combustion gas extracted from the furnace and steam of a steam generator. The fuel gas introduction means introduces a mixed fluid of combustion gas, steam and fuel to the combustion area as a fuel gas, and allows the fuel gas to be mixed with the combustion air.

Abstract: A reactor combustion control method using a high temperature air combustion technology capable of reducing a temperature difference in a reactor without producing cracking and caulking in reaction tubes and the reactor controlled by using the method, the reactor wherein second burners (8) are disposed in a space formed between two or more reaction tubes (7) adjacent to each other so as to inject fuel in the extending direction of the reaction tubes (7).

Abstract: A reactor combustion control method using a high temperature air combustion technology capable of reducing a temperature difference in a reactor without producing cracking and caulking in reaction tubes and the reactor controlled by using the method, the reactor wherein second burners (8) are disposed in a space formed between two or more reaction tubes (7) adjacent to each other so as to inject fuel in the extending direction of the reaction tubes (7), and partial combustion air feeding devices (10) and (11) for the second burners discharging exhaust gas in a combustion chamber (2) to the outside of the reactor through a permeable heat reservoir and feeding combustion air heated to a high temperature by the latent heat of the heat reservoir to the second burners (8) are installed; the method comprising the steps of raising the temperature in the reactor by the combustion of only the first burners (3a) to (6a) until the inside of a reactor body (1) is brought into a high temperature air combustion state, star

Abstract: There is provided an electrostatic latent image developing toner including a binder resin, a colorant, and a release agent, wherein the shape factor SF1 of the toner is within the range from 110 to 140, the volume average particle size of the toner is within the range from 1.2 ?m to 4.8 ?m, and the crystallinity of the release agent within the toner is within the range from 35 to 80. There is also provided a method for manufacturing such a toner.

Abstract: The present invention relates to a combustion method and a burner for forming a flame temperature having a flat temperature distribution which is the same as that in a case of a long furnace length even if a furnace length is short, and performs complete combustion. Further, a regenerative burner technique can be applied even if a furnace length is short. Combustion air whose quantity is less than the theoretical air quantity or not less than the theoretical air quantity is injected into a furnace so as to form a jet flow cross section having a larger specific surface area than that in a case of supplying the same quantity of combustion air from a circular throat, and fuel is injected toward this air jet flow to cause the fuel to be rapidly mixed with the air jet flow with strong turbulences before losing the velocity energy of the fuel. More preferably, an air throat 13 has a flat rectangular opening 13a.

Abstract: A semiconductor device formed of an insulation layer having at least a laminated portion in which a first insulation film made of silicon oxide film and a second insulation film made of organic insulation film are laminated on each other, wherein said semiconductor device has a silicon oxide film structure in which moisture absorption is limited, said structure having characteristics showing that a ratio SI/SII of area integrations SI and SII of a desorption gas spectrum by ion current measurement of the temperature programmed desorption mass analysis measurement based on mass 18 relating to the laminated structure of the silicon oxide film and the organic insulation film and a single layer structure of the silicon oxide film is not less than 1 or not more than 1.5.

Abstract: A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a rare gas in the second chamber, and forming a second insulating film including silicon, carbon, oxygen, and hydrogen above the first insulating film after the discharging the rare gas.

Abstract: A semiconductor device formed of an insulation layer having at least a laminated portion in which a first insulation film made of silicon oxide film and a second insulation film made of organic insulation film are laminated on each other, wherein said semiconductor device has a silicon oxide film structure in which moisture absorption is limited, said structure having characteristics showing that a ratio SI/SII of area integrations SI and SII of a desorption gas spectrum by ion current measurement of the temperature programmed desorption mass analysis measurement based on mass 18 relating to the laminated structure of the silicon oxide film and the organic insulation film and a single layer structure of the silicon oxide film is not less than 1 or not more than 1.5.

Abstract: A semiconductor device including a semiconductor substrate, an insulating layer formed on the substrate, a dielectric organic layer formed on the insulating layer and having a dielectric constant of not more than 3.0, and an interconnection layer in contact with the insulating layer in the dielectric organic layer, wherein the upper surface of the interconnection layer is formed higher than the upper surface of the dielectric organic layer, and a method of manufacture thereof.

Abstract: A process for producing a semiconductor device for forming a highly reliable wiring structure is provided that solves the problem occurring on using a xerogel or a fluorine resin in an inter level dielectric between the wirings to decrease a wiring capacitance, and the problem occurring on misalignment. A process for producing a semiconductor device comprising an inter level dielectric containing a xerogel film or a fluorine resin film comprises a step of forming, on the inter level dielectric comprising a lower layer of the inter level dielectric formed with an organic film and an upper layer of the inter level dielectric formed with a xerogel film or a fluorine resin film, a first mask to be an etching mask for forming a via contact hole by etching the inter level dielectric, and a step of forming, on the first mask, a second mask, which comprises a different material from the first mask, to be an etching mask for forming a wiring groove by etching the inter level dielectric.

Abstract: A semiconductor device including a semiconductor substrate, an insulating layer formed on the substrate, a dielectric organic layer formed on the insulating layer and having a dielectric constant of not more than 3.0, and an interconnection layer in contact with the insulating layer in the dielectric organic layer, wherein the upper surface of the interconnection layer is formed higher than the upper surface of the dielectric organic layer, and a method of manufacture thereof.

Abstract: A carbon black producing apparatus comprising a first reaction zone (1) where an oxygen-containing gas and fuel are supplied into the reactor and burned to form a combustion gas flow, a second reaction zone (2) disposed downstream of the first reaction zone and having a feedstock hydrocarbon feed port or ports for supplying a feedstock hydrocarbon to the combustion gas flow, whereby the feedstock hydrocarbon is reacted to produce carbon black, and a third reaction zone (3) disposed downstream of the second reaction zone and designed to stop the reaction, wherein in the first reaction zone, fuel feed port(s) (5) and oxygen-containing gas feed port(s) (6) are provided independently spaced-apart from each other and opened into the reactor from the same side thereof.

Abstract: A stacked insulating film having an organic insulating film, and a carbon-containing silicon oxide film formed on the organic insulating film is disclosed. The carbon-containing silicon oxide film has a carbon content of 8 atom % to 25 atom %.

Abstract: A semiconductor device including a semiconductor substrate, an insulating layer formed on the substrate, a dielectric organic layer formed on the insulating layer and having a dielectric constant of not more than 3.0, and an interconnection layer in contact with the insulating layer in the dielectric organic layer, wherein the upper surface of the interconnection layer is formed higher than the upper surface of the dielectric organic layer, and a method of manufacture thereof.

Abstract: A process for producing a semiconductor device comprising an interlayer dielectric containing an organic film, which process comprises the step of forming on the interlayer dielectric a three-layer mask comprising a first mask, a second mask and a third mask in this order from the bottom, in which the first mask, the second mask and the third mask are made of materials different from one another, and the second mask is formed from a film made of a material which protects a film for forming the first mask during formation of the third mask.