Abstract: A gas analyzing apparatus includes a probe for measuring a concentration of sample gas flowing in a pipe by an optical measurement system. Influence of a thermal lens effect phenomenon is suppressed so that measurement accuracy is improved. The apparatus includes a probe tube disposed to cross a flow path of the sample gas in the pipe to introduce the sample gas flowing in the pipe to a predetermined hollow measurement region. A light emission portion and a light receiving portion for project measurement light to the measurement region in the probe tube and receive the measurement light after passing through the sample gas in the measurement region. A purge gas feed tube disposed in the probe tube supplies purge gas to a region between the optical system members and the measurement region, with a gap to the inner wall surface of the probe tube.

Abstract: A gas analysis apparatus includes: a first reflector that reflects measurement light from a light emitting unit disposed outside a gas flue wall and transmitted through a sample gas. A light receiving unit outside the gas flue wall receives measurement light reflected by the first reflector. A second reflector outside the gas flue wall reflects measurement light toward the light receiving unit. A computing unit analyzes sample gas by allowing the measurement light to be reflected by the first reflector and performs correction or calibration of the gas analysis apparatus using known substances within an associated containing unit along the light path between the light emitting unit and the second reflector by allowing measurement light to be reflected by the second reflector. A switching unit outside the gas flue wall selectively removes or inserts the second reflector from the light path during component concentration analysis and correction or calibration, respectively.

Abstract: A gas analysis apparatus includes: a first reflector that reflects measurement light from a light emitting unit disposed outside a gas flue wall and transmitted through a sample gas. A light receiving unit outside the gas flue wall receives measurement light reflected by the first reflector. A second reflector outside the gas flue wall reflects measurement light toward the light receiving unit. A computing unit analyzes sample gas by allowing the measurement light to be reflected by the first reflector and performs correction or calibration of the gas analysis apparatus using known substances within an associated containing unit along the light path between the light emitting unit and the second reflector by allowing measurement light to be reflected by the second reflector. A switching unit outside the gas flue wall selectively removes or inserts the second reflector from the light path during component concentration analysis and correction or calibration, respectively.

Abstract: A measurement unit used in an analyzing apparatus for measuring concentrations of component gases in a sample gas comprises a light emitting unit configured to emit a measurement light to the sample gas, a light receiving unit configured to receive the measurement light on a light receiving plane, a purge air introducing unit configured to introduce a purge air into a vicinity of at least one of the light emitting unit and the light receiving unit, and a condensing lens arranged in an optical path of the measurement light from the light emitting unit to the light receiving unit, the condensing lens being configured to condense the measurement light within the light receiving plane of the light receiving unit, a propagation path of the measurement light being varied by a thermal lens effect caused by a temperature difference between the sample gas and the purge air.

Abstract: A probe for gas analysis is provided in a pipe through which sample gas flows. The probe includes a tubular member and one or more sample gas inflow portions. The tubular member is disposed to cross a flow of the sample gas, and includes a measurement field to which the sample gas is introduced. The one or more sample gas inflow portions are provided in the tubular member. The sample gas flows around, and flows into the measurement field through the one or more sample gas inflow portions.

Abstract: An air-driven shutter device is used in an optical analyzer. The optical analyzer includes a measurement field to which a sample is supplied, a light-emitting unit measurement field for emitting measuring light to the sample, a light-receptive unit for receiving the measuring light that has passed through the sample, and a purge air supplying unit for supplying purge air. The air-driven shutter device includes a shutter and a shutter opening and closing mechanism. The shutter is disposed between the light-emitting unit and/or the light-receptive unit and the measurement field. The shutter opening and closing mechanism keeps the shutter open with pressure of the gas supplied from the purge air supplying unit, and closes the shutter when the pressure of the gas supplied from the purge air supplying unit becomes lower than a predetermined level.

Abstract: A probe for gas analysis is provided in a pipe through which sample gas flows. The probe includes a tubular member and one or more sample gas inflow portions. The tubular member is disposed to cross a flow of the sample gas, and includes a measurement field to which the sample gas is introduced. The one or more sample gas inflow portions are provided in the tubular member. The sample gas flows around, and flows into the measurement field through the one or more sample gas inflow portions.

Abstract: An air-driven shutter device is used in an optical analyzer. The optical analyzer includes a measurement field to which a sample is supplied, a light-emitting unit measurement field for emitting measuring light to the sample, a light-receptive unit for receiving the measuring light that has passed through the sample, and a purge air supplying unit for supplying purge air. The air-driven shutter device includes a shutter and a shutter opening and closing mechanism. The shutter is disposed between the light-emitting unit and/or the light-receptive unit and the measurement field. The shutter opening and closing mechanism keeps the shutter open with pressure of the gas supplied from the purge air supplying unit, and closes the shutter when the pressure of the gas supplied from the purge air supplying unit becomes lower than a predetermined level.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 ?m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm?1 is greater than a peak (P1) located in the vicinity of 1,335 cm?1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm?1 is not greater than 150 cm?1.

Abstract: An electron-emitting device includes a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 ?m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm?1 is greater than a peak (P1) located in the vicinity of 1,335 cm?1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm?1 is not greater than 150 cm?1.

Abstract: A method and an apparatus of manufacturing an image displaying apparatus including an electron source substrate and a phosphor substrate. The electron source substrate is provided with an electron emitting element formed by covering with a container and by applying a voltage to an electronic conductor on the substrate. While, the phosphor substrate is provided with a phosphor thereon. The substrates are subjected to a getter processing and to a seal bonding process under a vacuum condition through a processing chamber, to complete an image forming apparatus. An improvement resides in miniaturizing and simplifying operation, and in greater manufacture speed and mass production.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 ?m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm?1 is greater than a peak (P1) located in the vicinity of 1,335 cm?1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm?1 is not greater than 150 cm?1.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 ?m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm?1 is greater than a peak (P1) located in the vicinity of 1,335 cm?1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm?1 is not greater than 150 cm?1.

Abstract: The present invention has been made to simplify assembly and maintenance of a sample analyzer including: a flow passageway 3 that flows fluid, such as a sample, air, or the like; one or more fluid control units 5 that control the flow of the fluid on the flow passageway 3; a measurement cell 41 that is provided on the flow passageway 3; a sample analysis part 6 that analyzes the sample inside the measurement cell 41; and a casing 7 that holds these parts mentioned above. At least one of the fluid control units 5 is formed by unitizing functions related to fluid control; integrally has a manifold 502 that forms an internal flow path 501, one or more control valves 503 that control flow of the fluid in the internal flow path 501 and connection ports 504 for connecting together the internal flow path 501 and the flow passageway 3; and is so configured as to be removable from the casing 7.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 ?m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm?1 is greater than a peak (P1) located in the vicinity of 1,335 cm?1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm?1 is not greater than 150 cm?1.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 ?m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm?1 is greater than a peak (P1) located in the vicinity of 1,335 cm?1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm?1 is not greater than 150 cm?1.

Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.