Abstract: A luggage storage structure for an automobile includes: a storage concave portion formed so as to project downward on a floor panel and capable of storing luggage, a plate member for approximately closing an upper part of the storage concave portion, and a transfer mechanism for transferring the plate member approximately up and down in an upper part of the floor panel. The luggage structure is securely protected by the plate member and the transfer mechanism.

Abstract: The digital camera being capable of recording stereoscopic first and second still images includes an imaging device that captures the first and second still images in this order, a display unit that displays a moving image captured by the imaging device to allow framing an image to be taken. The display unit superimpose a framing assisting pattern on the moving image to facilitate the framing of the image to be taken. A grid pattern may be utilized as the framing assisting pattern. After the first still image is captured, the display unit displays the first still image, with the framing assisting pattern superimposed thereon, besides the moving image after said first still image is captured.

Abstract: A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

Abstract: An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.

Abstract: A telescope main body, which is provided with an objective optical system, a focusing system, an imaging device, a beam splitter, and a correcting system that performs a correcting operation for correcting a position shift between an image forming position of an object image and a receiving surface of the imaging device caused by diopter variation of a user. The correcting system includes a focus driving system which relatively moves an image forming position of the object image with respect to the receiving surface, a focus detecting system which detects a status in which the image forming position coincides with the receiving surface, and a controller controlling the focus driving system. The controller has with a learning function of storing correction data of a preceding correcting operation so that the stored correction data of the preceding correcting operation is reflected in a subsequent correction operation.

Abstract: A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.

Abstract: A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.

Abstract: A semiconductor processing apparatus for processing a semiconductor wafer includes a plurality of sensors for monitoring a processing state, a processing result input unit, a model equation generation unit to generate a model equation for predicting a processing result, a processing result prediction unit which predicts a processing result, and a process recipe control unit. Further, a system is provided which comprises the model equation generation unit is provided at a remote location, and transmits the generated prediction model equation to the semiconductor processing apparatus through a network to control the processing condition of the semiconductor processing apparatus by the process recipe control unit.

Abstract: A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.

Abstract: A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.

Abstract: In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

Abstract: A plasma processing system includes a first unit for plasma-processing a sample based on a recipe for plasma processing, and a second unit for modifying the recipe in accordance with a monitored value obtained during the plasma processing of the sample in the first unit. A next sample is plasma processed in the first unit based on the modified recipe.

Abstract: For maintenance after wet cleaning of a plasma processing apparatus which processes a specimen in a vacuum processing chamber by using a plasma, when restoration processing after the wet cleaning of members configuring the vacuum processing chamber is performed with the vacuum processing chamber opened to the atmosphere, it is automatically or semiautomatically judged whether the restoration processing is appropriate or not according to a predetermined optimum sequence inherent in the apparatus, and the next processing is started automatically or semiautomatically according to the results.

Abstract: A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition or input parameter.

Abstract: In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.

Abstract: A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.

Abstract: A portable imaging device has a memory which stores a device image. This device image shows a part of an outside of the portable image device itself including a plurality of selectable portions relating to the control members of the portable image device. The device image is read and is indicated on the LCD of the portable image device. With the portable image at least one of characters is indicated on the LCD. The characters correspond to selectable portions. One of the selectable portions is selected as a selected portion. The selected portion is distinguished from other selectable portion by the characters. The function relating to the selected portion is indicated on the LCD.

Abstract: A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

Abstract: A telescope main body, which is provided with an objective optical system, a focusing system, an imaging device, a beam splitter, and a correcting system that performs a correcting operation for correcting a position shift between an image forming position of an object image and a receiving surface of the imaging device caused by diopter variation of a user. The correcting system includes a focus driving system which relatively moves an image forming position of the object image with respect to the receiving surface, a focus detecting system which detects a status in which the image forming position coincides with the receiving surface, and a controller controlling the focus driving system. The controller has with a learning function of storing correction data of a preceding correcting operation so that the stored correction data of the preceding correcting operation is reflected in a subsequent correction operation.

Abstract: An optical instrument, which includes an imaging optical system, an imaging device, a focus driving system that relatively moves an image forming position of the object image with respect to a receiving surface of the imaging device, and a controller that controls the imaging device and the focus driving system. The controller obtains., in one shooting operation, continuously a normal photographing image and at least one focus corrected:image which is captured when an object image of a certain color component is properly focused on the receiving surface of the imaging device. Light of the certain color component causes a longitudinal spherical aberration when passing through the imaging optical system.