Abstract: A telescope main body, which includes an objective optical system, a focusing system including a focus adjusting member to be manipulated and a focusing lens, an imaging device, and a beam splitter. The telescope main body further includes a focus driving system that relatively moves an image forming position of the object image with respect to a receiving surface of the imaging device, a detecting system that detects brightness of ambient light, and a controller that controls the imaging device and the focus driving system. The controller adjusts the image forming position relative to the receiving surface based on the brightness of the ambient light detected by the detecting system.

Abstract: A telescope main body, which includes an objective optical system, a focusing system, an imaging device which captures an object image, and a beam splitter. Further, the telescope main body includes a calibration system that performs a calibration operation for calibrating a position shift between an image forming position of the object image and a receiving surface of the imaging device caused by diopter variation of a user. The calibration system includes a focus driving system, a focus detecting system, and a controller. The calibration system performs the calibration operation based on a detection result by the focus detecting system in a situation where the user has achieved focusing of a visual image by manipulating a focus adjusting member.

Abstract: A semiconductor processing apparatus for processing a semiconductor wafer includes a sensor for monitoring a processing state of the semiconductor processing apparatus, a processing result input unit which inputs measured values for processing results of a semiconductor wafer processed by the semiconductor processing apparatus, and a model equation generation unit relying on sensed data acquired by the sensor and the measured values to generate a model equation for predicting a processing result using the sensed data as an explanatory variable. The apparatus includes a processing result prediction unit which predicts a processing result based on the model equation and the sensed data, and a process recipe control unit which compares the predicted processing result with a previously set value to control a processing condition. The process recipe control unit includes a controller which controls at least one among a plurality of different processing performances for processing of the semiconductor wafer.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.

Abstract: The present apparatus comprises a vacuum process chamber 100 that contains an upper electrode 110 having a conductive plate 115 with gas supply holes for supplying a process gas and a lower electrode 130 having a platform on which a sample is to be mounted; process gas supply means 117 for supplying the process gas to the gas supply holes in the upper electrode 110 and exhaust means 106 for exhausting the vacuum process chamber; a high frequency power supply 121 for applying a high frequency power to the upper electrode to generate a plasma between the upper and lower electrodes; a high frequency bias power supply 122 for applying a high frequency power to the upper electrode to generate a direct current bias potential in the upper electrode; and abnormal discharge determination means 152 for determining whether an abnormal discharge has occurred or not based on the direct current bias potential generated in the upper electrode.

Abstract: A plasma processing control system for a plasma processing apparatus having a plasma processor for performing a plasma processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during the processing operation, a unit for providing a processed-result estimation model which estimates a processed result on the basis of a monitored output from the sensor and a preset processed-result estimation equation, a unit for providing an optimum recipe calculation model which calculates corrections to the processing conditions so that the processed result becomes a target value on the basis of the estimated result of the processed-result estimation model, and a unit for causing the processing apparatus to process the sample under the optimum processing conditions in the next processing step on the basis of a recipe generated from the optimum recipe calculation model.

Abstract: A semiconductor plasma processing apparatus for processing a semiconductor wafer includes a sensor for monitoring at least one processing state of the semiconductor plasma processing apparatus, first and second processing state monitoring units coupled to the sensor, and a selector unit for selecting one of the first and second processing state monitoring units.

Abstract: A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

Abstract: The present apparatus comprises a vacuum process chamber 100 that contains an upper electrode 110 having a conductive plate 115 with gas supply holes for supplying a process gas and a lower electrode 130 having a platform on which a sample is to be mounted; process gas supply means 117 for supplying the process gas to the gas supply holes in the upper electrode 110 and exhaust means 106 for exhausting the vacuum process chamber; a high frequency power supply 121 for applying a high frequency power to the upper electrode to generate a plasma between the upper and lower electrodes; a high frequency bias power supply 122 for applying a high frequency power to the upper electrode to generate a direct current bias potential in the upper electrode; and abnormal discharge determination means 152 for determining whether an abnormal discharge has occurred or not based on the direct current bias potential generated in the upper electrode.

Abstract: A data processing apparatus for a semiconductor manufacturing apparatus includes a semiconductor manufacturing apparatus for executing processing for a wafer, a data collecting semiconductor device for collecting processing data generated in association with the processing, and a data copying semiconductor device for extracting the processing data collected in the data collecting semiconductor device and for producing a copy of the processing data. The apparatus may include a data analyzer for analyzing the data copy produced by the data copying semiconductor device and for diagnosing a processing state of the processing apparatus.

Abstract: A plasma processing apparatus includes a processing chamber, a sample bench in the processing chamber mounting a wafer thereon, a plate having a plurality of through holes including discharge holes through which a processing gas flows into the processing chamber, the plate being disposed in an upper portion of the processing chamber, and a member in the upper portion of the processing chamber and provided with the plate on the side thereof facing the plasma. A light receiving unit is provided having an optical transmitter for transmitting therethrough a light from inside of the processing chamber having passed the through holes formed in the plate. The light receiving unit is attached to the member, and an end face of the optical transmitter is opposed to a back of the plate and the through holes so as to be in contact therewith or spaced therefrom by a minute gap.

Abstract: In a plasma processing apparatus including: a process chamber 3; a light-receiving part 11 for receiving a plasma emission; a spectrometer unit 13 for performing a spectrometry on the plasma emission to convert the same into a multi-channel signal; a signal converting unit 14 for converting the multi-channel signal into one signal using a filter vector stored in a database 15; and a processing unit 16 for determining a condition in the process chamber based on the resulting signal, the condition in the process chamber is determined in such a manner that differences between principal component scores derived from plasma emission data on a lot of substrates by multivariate analysis and principal component scores for the preceding lot of substrates are found, an average value of the differences in one lot, a difference between a maximum and a minimum of the differences in one lot and a standard deviation of the differences in one lot are determined, and the values are compared with a preset threshold.

Abstract: In a plasma processing apparatus including: a process chamber 3; a light-receiving part 11 for receiving a plasma emission; a spectrometer unit 13 for performing a spectrometry on the plasma emission to convert the same into a multi-channel signal; a signal converting unit 14 for converting the multi-channel signal into one signal using a filter vector stored in a database 15; and a processing unit 16 for determining a condition in the process chamber based on the resulting signal, the condition in the process chamber is determined in such a manner that differences between principal component scores derived from plasma emission data on a lot of substrates by multivariate analysis and principal component scores for the preceding lot of substrates are found, an average value of the differences in one lot, a difference between a maximum and a minimum of the differences in one lot and a standard deviation of the differences in one lot are determined, and the values are compared with a preset threshold.

Abstract: A luggage storage structure for an automobile includes: a storage concave portion formed so as to project downward on a floor panel and capable of storing luggage, a plate member for approximately closing an upper part of the storage concave portion, and a transfer mechanism for transferring the plate member approximately up and down in an upper part of the floor panel. The luggage structure is securely protected by the plate member and the transfer mechanism.

Abstract: A data processing apparatus for a semiconductor manufacturing apparatus includes a semiconductor manufacturing apparatus for executing processing for a wafer, a data collecting semiconductor device for collecting processing data generated in association with the processing, and a data copying semiconductor device for extracting the processing data collected in the data collecting semiconductor device and for producing a copy of the processing data. The apparatus may include a data analyzer for analyzing the data copy produced by the data copying semiconductor device and for diagnosing a processing state of the processing apparatus.

Abstract: The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter.

Abstract: A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

Abstract: A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

Abstract: For maintenance after wet cleaning of a plasma processing apparatus which processes a specimen in a vacuum processing chamber by using a plasma, when restoration processing after the wet cleaning of members configuring the vacuum processing chamber is performed with the vacuum processing chamber opened to the atmosphere, it is automatically or semiautomatically judged whether the restoration processing is appropriate or not according to a predetermined optimum sequence inherent in the apparatus, and the next processing is started automatically or semiautomatically according to the results.

Abstract: A plasma processing control system and method which can suppress influences caused by disturbances. The control system includes a plasma processor for performing processing operation over a sample accommodated within a vacuum processing chamber, a sensor for monitoring process parameters during processing operation of the plasma processor, a processed-result estimation model for estimating a processed result on the basis of a monitored output of the sensor and a preset processed-result prediction equation, and an optimum recipe calculation model for calculating correction values of processing conditions on the basis of an estimated result of the processed-result estimation model in such a manner that the processed result becomes a target value. The plasma processor is controlled on the basis of a recipe generated by the optimum recipe calculation model.