Patents by Inventor Trung T. Doan
Trung T. Doan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11850703Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: GrantFiled: February 9, 2023Date of Patent: December 26, 2023Assignee: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Publication number: 20230182261Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: ApplicationFiled: February 9, 2023Publication date: June 15, 2023Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Patent number: 11577361Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: GrantFiled: February 1, 2022Date of Patent: February 14, 2023Assignee: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Publication number: 20220152778Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: ApplicationFiled: February 1, 2022Publication date: May 19, 2022Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Patent number: 11260500Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: GrantFiled: September 3, 2020Date of Patent: March 1, 2022Assignee: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Publication number: 20200398399Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: ApplicationFiled: September 3, 2020Publication date: December 24, 2020Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Patent number: 10766117Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: GrantFiled: February 28, 2018Date of Patent: September 8, 2020Assignee: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Publication number: 20180185979Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: ApplicationFiled: February 28, 2018Publication date: July 5, 2018Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Patent number: 9937601Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: GrantFiled: October 29, 2015Date of Patent: April 10, 2018Assignee: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Publication number: 20160045997Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: ApplicationFiled: October 29, 2015Publication date: February 18, 2016Applicant: APPLIED MATERIALS, INC.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Patent number: 9186773Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: GrantFiled: October 31, 2013Date of Patent: November 17, 2015Assignee: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Publication number: 20140053981Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: ApplicationFiled: October 31, 2013Publication date: February 27, 2014Applicant: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey P. Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Daniel Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Patent number: 8585468Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: GrantFiled: November 28, 2011Date of Patent: November 19, 2013Assignee: Applied Materials, Inc.Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Publication number: 20130240834Abstract: A method for fabricating vertical light emitting diode (VLED) dice includes the steps of: forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation in a first spectral region; forming a confinement layer on the multiple quantum well (MQW) layer; forming an adhesive layer on the confinement layer; and forming a wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation in the first spectral region to output electromagnetic radiation in a second spectral region.Type: ApplicationFiled: May 14, 2013Publication date: September 19, 2013Applicant: SemiLEDS Optoelectronics Co., Ltd.Inventors: CHUONG ANH TRAN, Trung T. Doan, David Trung Doan
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Patent number: 8518184Abstract: The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.Type: GrantFiled: July 20, 2010Date of Patent: August 27, 2013Assignee: Micron Technology, Inc.Inventors: Kevin L. Beaman, Trung T. Doan, Lyle D. Breiner, Ronald A. Weimer, Er-Xuan Ping, David J. Kubista, Cem Basceri, Lingyi A. Zheng
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Patent number: 8384192Abstract: The present disclosure provides small scale capacitors (e.g., DRAM capacitors) and methods of forming such capacitors. One exemplary implementation provides a method of fabricating a capacitor that includes sequentially forming a first electrode, a dielectric layer, and a second electrode. At least one of the electrodes may be formed by a) reacting two precursors to deposit a first conductive layer at a first deposition rate, and b) depositing a second conductive layer at a second, lower deposition rate by depositing a precursor layer of one precursor at least one monolayer thick and exposing that precursor layer to another precursor to form a nanolayer reaction product. The second conductive layer may be in contact with the dielectric layer and have a thickness of no greater than about 50 ?.Type: GrantFiled: March 14, 2011Date of Patent: February 26, 2013Assignee: Micron Technology, Inc.Inventors: Lingyi A. Zheng, Trung T. Doan, Lyle D. Breiner, Er-Xuan Ping, Kevin L. Beaman, Ronald A. Weimer, Cem Basceri, David J. Kubista
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Publication number: 20120071067Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.Type: ApplicationFiled: November 28, 2011Publication date: March 22, 2012Inventors: Hung Chih Chen, Steven M. Zuniga, Charles C. Garretson, Douglas R. McAllister, Jian Lin, Stacy Meyer, Sidney P. Huey, Jeonghoon Oh, Trung T. Doan, Jeffrey Schmidt, Martin S. Wohlert, Kerry F. Hughes, James C. Wang, Danny Cam Toan Lu, Romain Beau De Lamenie, Venkata R. Balagani, Aden Martin Allen, Michael Jon Fong
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Patent number: 8124491Abstract: Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location.Type: GrantFiled: August 25, 2009Date of Patent: February 28, 2012Assignee: Micron Technology, Inc.Inventors: D. Mark Durcan, Trung T. Doan, Roger R. Lee, Fernando Gonzalez
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Publication number: 20120032184Abstract: A vertical light-emitting diode (VLED) includes a metal substrate, a p-electrode coupled to the metal substrate, a p-contact coupled to the p-electrode, a p-GaN portion coupled to the p-electrode, an active region coupled to the p-GaN portion, an n-GaN portion coupled to the active region, and a phosphor layer coupled to the n-GaN portion.Type: ApplicationFiled: September 7, 2011Publication date: February 9, 2012Inventors: CHUONG A. TRAN, TRUNG T. DOAN
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Patent number: 8097514Abstract: A support material for a semiconductor device is processed. An opening having a width is etched into the support material for the semiconductor device using a first etch mask. A portion of the opening is etched using a second etch mask without alignment thereof to the width of the opening.Type: GrantFiled: September 23, 2009Date of Patent: January 17, 2012Assignee: Round Rock Research, LLCInventors: Charles H. Dennison, Trung T. Doan