Abstract: A wavelength conversion phosphor having a wavelength conversion function, which is high in fluorescence output and excellent in heat resistance. The wavelength conversion phosphor including a first metal oxide phase as a phosphor phase containing activated metal ions which emit fluorescence, and a second metal oxide phase adjacent to the first metal oxide phase through an interface, in which a concentration of the activated metal ions in the interface is higher than a concentration of the activated metal ions contained in the first metal oxide phase.

Abstract: The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Abstract: Disclosed is an alumina raw material for the production of a sapphire single crystal, which contains at least one element X selected from the group consisting of elements (1) to (3) shown below, wherein the concentration of the element X is 10 ppm or more and 1,000 ppm or less expressed in terms of atoms, and each concentration of silicon (Si), gallium (Ga), germanium (Ge) and tin (Sn) is 10 ppm or less expressed in terms of atoms. Element X: (1) Element having an ionic radius of 0.3 ? or less, and a valence of 3 (2) Element having an ionic radius of 0.4 ? or more and 0.5 ? or less, and a valence of 4 (3) Element having an ionic radius of 0.6 ? or more and 0.7 ? or less, and a valence of 4 or 5.

Abstract: A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a ?C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.

Abstract: There is provided a novel method for producing a nitride single crystal with both a rapid crystal growth rate and high crystal quality, as well as a novel autoclave that can be used in the method. The invention provides a method for producing a Ga-containing nitride single crystal by an ammonothermal method, comprising introducing at least a starting material, an acidic mineralizer and ammonia into an autoclave, and then growing a Ga-containing nitride single crystal under conditions wherein the temperature (T1) at the single crystal growth site is 600° C. to 850° C., the temperature (T1) at the single crystal growth site and the temperature (T2) at the starting material feeder site are in the relationship T1>T2, and the pressure in the autoclave is 40 MPa to 250 MPa, as well as an autoclave that can be used in the method.

Abstract: A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a ?C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.

Abstract: There is provided a wireless measuring apparatus that efficiently measures the frequency characteristics of a sensor unit mounted on an object to be measured. The wireless measuring apparatus is a wireless measuring apparatus that measures the frequency characteristics of a sensor unit (10) mounted on an object (40) to be measured, including the sensor unit (10) having a piezo-resonator (11), an antenna (20) that forms a circuitry with the sensor unit (10), and a measuring element (30) that supplies high frequency electricity changed in different frequency to the circuitry and measures the frequency characteristics of the reflected electricity strength received from the circuitry.

Abstract: Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.

Abstract: A single crystal of magnesium fluoride having a large diameter and excellent optical properties such as internal transmittance and long term laser durability, and suited for use as optical elements for exposing apparatus. The single crystal of magnesium fluoride is of a cylindrical shape having a straight body portion of a diameter of not smaller than 10 cm, has an internal transmittance of at least 85%/cm at 120 nm and at least 98%/cm at 193 nm and has, desirably, an induced absorption of not larger than 0.0030 absorption/cm at 255 nm and, particularly desirably, not larger than 0.0010 absorption/cm. at 255 nm immediately after the irradiation with 2 million shorts of an ArF excimer laser of an energy density of 30 mJ/cm2 and 2000 Hz. The invention further provides an optical element for optical lithography comprising the single crystal and an optical member for vacuum ultraviolet ray transmission comprising the single crystal.

Abstract: Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.

Abstract: A method for producing a nitride semiconductor, comprising controlling temperature and pressure in a autoclave containing a seed having a hexagonal crystal structure, a nitrogen element-containing solvent, a raw material substance containing a metal element of Group 13 of the Periodic Table, and a mineralizer so as to put said solvent into a supercritical state and/or a subcritical state and thereby ammonothermally grow a nitride semiconductor crystal on the surface of said seed, wherein the crystal growth rate in the m-axis direction on said seed is 1.5 times or more the crystal growth rate in the c-axis direction on said seed. By the method, a nitride semiconductor having a large-diameter C plane or a nitride semiconductor thick in the m-axis direction can be efficiently and simply produced.

Abstract: A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is obtained by mutually combining a plurality of rare earth fluorides having phase transitions and having different ion radii, respectively, so that the rare earth fluoride solid solution material is free of phase transitions. A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is represented by (REyRE?1?y)F3 (0.0000<y<1.0000), wherein RE represents one or two or more selected from Sm, Eu, and Gd, and RE? represents one or two or more selected from Er, Tm, Yb, Lu, and Y. A rare earth fluoride solid solution material (polycrystal and/or single crystal) represented by MxREyRE?1?x?yFz., wherein RE is one or two or more selected from Ce, Pr, Nd, Eu, Tb, Ho, Er, Tm, or Yb, RE? is one or two or more selected from La, Sm, Gd, Dy, Lu, Y, and Sc, and M is one or more of Mg, Ca, Sr, and Ba.

Abstract: It is an object of the present invention to provide a self-coated single crystal that without any special step conducted after crystal growth, has its circumference coated with a layer of different properties. A self-coated single crystal according to the present invention is characterized in that in operations comprising melting crystal materials for a core and a clad in a single crucible and carrying out growth of a single crystal through a pulling up method or a pulling down method, a grown single crystal in an as-growth condition has its circumference self-coated with a clad whose refractive index is lower than that of the core.

Abstract: To control the precipitation position of a crystal and increase the yield of the crystal by performing the crystal growth according to the solvothermal method while allowing a predetermined amount of a substance differing in the critical density from the solvent to be present in the reaction vessel; and to prevent mixing of an impurity into the crystal and improve the crystal purity.

Abstract: A scintillator, characterized in that it comprises crystals of Pr1-xCexF3 [wherein 0<x<0.5]. It emits a light in ultraviolet and visible regions when it is irradiated with a light or a radiation. The scintillator uses a material which exhibits improved performance with respect to the strength in light emission and to the speed in attenuation, and further is relatively easy in the growth of its crystal.

Abstract: The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Abstract: Disclosed is a method for producing a BaLiF3 single crystal by a melt growth method, wherein a raw material melt for said single crystal comprising BaF2, LiF and MgF2 in such amounts that the Ba/(Ba+Li+Mg) ratio by mol is in the range of 0.35 to 0.48 and the Mg/(Li+Mg) ratio by mol is in the range of 0.001 to 0.03. In the case where a BaLiF3 single crystal that is useful as a last lens of immersion exposure tools for producing a semiconductor is produced by a melt growth method using, as a raw material, a melt containing excess Li, the Li component is liable to be precipitated to make the resulting BaLiF3 single crystal opaque, and the light transmittance is deteriorated, but such problems can be solved by the present invention.

Abstract: It is aimed at providing a fluoride crystal growing method capable of controlling a shape of the crystal by a micro-pulling-down method. Fluoride crystals in shapes depending on purposes, respectively, can be grown by adopting carbon, platinum, and iridium as crucible materials adaptable to fluorides, respectively, and by designing shapes of the crucibles taking account of wettabilities of the materials with the fluorides, respectively.

Abstract: A single crystal of alkaline earth metal fluoride is produced by a single crystal pulling method, has a straight barrel part diameter of not less than 17 cm, preferably has a straight barrel part length of not less than 5 cm, and has a light transmittance, as measured at a wavelength of 632.8 nm, of not less than 80%, preferably 90 to 98%. Further, the main crystal growth plane of the single crystal is the {111} plane or the {100} plane. The single crystal of alkaline earth metal fluoride has a large diameter as described above, and in spite that it is in an as-grown state, the peripheral surface is not opaque and the visible light transmittance is high. Therefore, evaluation of bubbles or inclusions in the crystal becomes feasible without performing complicated machining of the crystal, and from the single crystal, a large-sized optical material having advantageous properties such as high quality and high uniformity can be cut out.

Abstract: Disclosed is a luminescent material for scintillators, which comprises a single crystal of an Yb-containing mixed-crystal oxide having a base crystal consisting of a garnet single crystal or a borate single crystal. The oxide single crystal has a composition represented by either one selected from the group consisting of R3Al5O12, R3Ga5O12, Li6R(BO3)3, LaR2Ga3O12 and Gd3R2Ga3O12, wherein R is a mixture of Yb and either one of Y, Gd and Lu. The Yb as an element capable of forming an optically active state called CTS together with a neighboring negative ion (oxygen ion).