Abstract: Optoelectric article includes a substrate made of an optoelectric single crystal and a film of a single crystal of lithium niobate formed on the substrate by a liquid phase epitaxial process, wherein a ratio of lithium/niobium of a composition of the film of the lithium niobate single crystal falls in a range of 48.6/51.4 to 49.5 to 50.5 or 50.5/49.5 to 52.3/47.7.

Abstract: When producing an oxide-series single crystal by continuously pulling downwardly by .mu. pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by changing the pulling rate of the single crystal. Preferably, the pulling rate is 20-300 mm/hr, and the pulling rate is decreased with the proceeding of growing of the single crystal.

Abstract: Provided is an oxide single crystal of large size having the crystal structure of Ca.sub.3 Ga.sub.2 Ge.sub.4 O.sub.14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO.sub.2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO.sub.2 in a stoichiometrically excess amount, and/or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than about 2.times.10.sup.-1 atm.

Abstract: A garnet crystal for growing a substrate is used for manufacturing a magneto-optic element. The garnet crystal is grown by the Czochralski method and has a chemical structure represented by Gd.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The method of manufacturing the garnet crystal for growing a magneto-optic element includes the steps of: preparing a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible by mixing the oxides together in a weight ratio such that the atomic ratio is Gd:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5; heating the mixture to make a melt of the mixture; and growing a garnet from the melt of the mixture by the Czochralski method.

Abstract: Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.

Abstract: A film made of lithium niobate-lithium tantalate solid solution may be formed on a single crystal substrate having a composition of LiNb.sub.1-z Ta.sub.z O.sub.3 (0.ltoreq.z<0.8) by the liquid phase epitaxial process. The substrate is contacted with supercooled liquid phase of a melt to produce the film thereon. The melt consists mainly of Li.sub.2 O.sub.3, Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5 and a flux. A composition of the liquid phase is within a region encompassed by a straight line K linking a point A (95, 5, 0) and a point B (95, 2, 3), a straight line G linking the point A (95, 5, 0) and a point C (60, 40, 0), a straight line H linking the point C (60, 40, 0) and a point D (60, 0, 40), a straight line J linking the point B (95, 2, 3) and a point E (0, 40, 60) and a curved line I defining a composition whose saturation temperature is not more than 1200.degree. C. Each line is shown in a triangular diagram of a pseudo-ternary system of LiNbO.sub.3 -LiTaO.sub.3 --a melting medium.

Abstract: Optoelectric article includes a substrate made of an optoelectric single crystal and a film of a single crystal of lithium niobate formed on the substrate by a liquid phase epitaxial process, wherein a ratio of lithium/niobium of a composition of the film of the lithium niobate single crystal falls in a range of 48.6/51.4 to 49.5 to 50.5 or 50.5/49.5 to 52.3/47.7.

Abstract: When producing a single-crystal bulk ZnSe from a melt by a high-pressure melt technique in a vertical Bridgman (VB) furnace or a vertical gradient freezing (VGF) furnace, preliminarily grown polycrystalline ZnSe (which may be a crystal solely composed of twins) is used as a seed and, after melting the starting ZnSe material and part of the seed, a twin-free ZnSe bulk crystal is grown on the seed; alternatively, polycrystalline ZnSe is grown at the tip of the growing crystal and part of it is melted, followed by growing a single crystal on that polycrystal to produce a twin-free, high-purity ZnSe bulk crystal. In either way, the process assures that twin-free single crystals of bulk ZnSe can be produced with good reproducibility without adding dopants or using any materials that are difficult to obtain.

Abstract: According to the invention, a film of optoelectric single crystal may be formed on a substrate made of optoelectric single crystal by a liquid phase epitaxial process. The process comprises the steps of producing a melt of a solute and a melting medium, a solid phase and a liquid phase coexisting in the melt; then cooling the liquid phase for producing super cooling state in the liquid phase; and contacting the substrate to the liquid phase to form the film on the substrate by an epitaxial growing process. The film may be produced on the substrate, the film having a half value width of an X-ray rocking curve not more than that of the substrate.

Abstract: A process for producing optoelectric articles, in which an optoelectric single crystal film is formed on an optoelectric single crystal substrate, is disclosed. The optoelectric single crystal substrate is exposed to a liquid phase in a supercooling state of a melt including a solute and a melting medium, and the optoelectric single crystal film is formed by a liquid phase epitaxial process. In this case, a viscosity of the liquid phase is set to 75%.about.95% preferably 75%.about.90% with respect to a viscosity at which a degree of supercooling of the liquid phase is zero.

Abstract: A method of growing a rod form of a single oxide crystal is disclosed. The method uses a slit die which is placed in a crucible with a starting melt. The melt is seeded with a seed crystal while being rotated. The resulting crystal will have the same sectional shape as the shape of the upper surface of the die.

Abstract: A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.

Abstract: A method for the production of a gallium arsenide single crystal which comprises bringing a seed crystal into contact with a fused layer of raw materials for the crystal while applying to the fused layer a magnetic field which has intensity enabling the temperature fluctuation in the neighborhood of the solid-liquid boundary in the fused layer to be repressed to within 1.degree. C., thereby effecting crystal growth.

Abstract: The heater member of a furnace for heating the crucible used for fusing raw materials for a semiconductor single crystal is provided with reinforcing members made of a material such as alumina or pyrolytic boron nitride which excels in electric insulating property, resistance to heat, and strength. When a magnetic field with an alternating current or pulsating current of electricity is applied to the site of single crystal growth for the purpose of stabilizing the growth of the single crystal, the furnace tends to sustain breakage. These reinforcing members thus used on the heater member impart improved durability to the furnace and enable the apparatus as a whole to enjoy a long service life.

Abstract: A III-V group compound semiconductor single crystal is manufactured by a method which comprises adjusting the temperature of a fused layer of raw material for the crystal, based on the electric current signal flowing between a seed crystal and the fused layer of raw material for the crystal, the weight signal of the crystal, and the length signal of the crystal, to levels optimum for the growth of crystal during the contact of the seed crystal with the fused layer, during the formation of the shoulder part of the crystal, and during the formation of the barrel part of the crystal, respectively in the process of crystal growth.

Abstract: The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit.

Abstract: A III-V compound semiconducting single crystal is manufactured by a method using an encapsulant, which method comprises allowing the molten mass of a material for the crystal melted in advance under high pressure to be placed under a pressure lower than the pressure to be exerted during the work of pulling the crystal thereby causing the molten mass to generate bubbles and allowing the departing bubbles to entrain impurities from the molten mass, bringing a seed crystal into contact with the molten mass, applying a potential to the molten mass thereby determining the impurity concentration of the molten mass based on the results of the measurement and, after the impurity concentration of the molten mass determined as described above has reached a prescribed level, initiating the work of pulling the crystal from the molten mass.

Abstract: A gallium phosphide single crystal is prepared from a polycrystalline gallium phosphide powder as a starting raw material which is obtained by hydrogen reduction of gallium phosphate and which contains residual phosphate radicals in an amount of 0.03 to 0.5% by weight. The gallium phosphide powder is compressed to prepare a green compact which is then melted to provide a gallium phosphide liquid. The gallium phosphide liquid is brought into contact with a seed crystal and is pulled.

Abstract: The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit.

Abstract: A method for producing a lithium tantalate single crystal comprises the steps of preparing a melt consisting essentially of lithium tantalate in a platinum-rhodium crucible including (20 to 35 weight percent of rhodium and 80 to 65 weight percent of platinum), and growing a lithium tantalate single crystal from the melt.