Patents by Inventor Tsuguo Fukuda

Tsuguo Fukuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing oxide piezoelectric material wafers
    Patent number: 4154025
    Abstract: A method for preparing oxide piezoelectric material wafers from a rhombohedral single crystal of an oxide piezoelectric material as-grown cylindrically in the X-axis direction includes linearly rubbing-off at least one side portion of such as-grown cylindrical single crystal facing to a specified direction along the longitudinal direction of such single crystal before cutting X-cut wafers from such single crystal thereby to provide a corresponding flat portion.
    Type: Grant
    Filed: October 3, 1977
    Date of Patent: May 15, 1979
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Tsuguo Fukuda, Hitoshi Hirano
  • Method for producing a lithium tantalate single crystal
    Patent number: 4144117
    Abstract: A method for producing a lithium tantalate single crystal comprises the steps of preparing a melt consisting essentially of lithium tantalate in a platinum-rhodium crucible including 20 to 40 weight percent of rhodium, and growing a lithium tantalate single crystal from the melt in an oxidizing atmosphere, for example, in the atmosphere.
    Type: Grant
    Filed: March 10, 1977
    Date of Patent: March 13, 1979
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Tsuguo Fukuda, Hitoshi Hirano
  • Lithium tantalate single crystal growth from a platinum-rhodium crucible in an inert gas, nitrogen or reducing gas atmosphere
    Patent number: 4135963
    Abstract: A method of producing a single crystal of lithium tantalate in a platinum-rhodium crucible containing 20 to 40% by weight of rhodium in an atmosphere of reducing or inert gas.
    Type: Grant
    Filed: November 23, 1977
    Date of Patent: January 23, 1979
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventor: Tsuguo Fukuda
  • Method of growing multiple monocrystalline layers
    Patent number: 4022652
    Abstract: A method of growing multiple monocrystalline layers from melts comprising growing a first monocrystalline layer from the first melt, and growing a second monocrystalline layer on the first monocrystalline layer from the second melt by successively contacting the first monocrystalline layer with the second melt during the growth of the first monocrystalline layer.
    Type: Grant
    Filed: September 9, 1975
    Date of Patent: May 10, 1977
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Hitoshi Hirano, Tsuguo Fukuda