Abstract: According to one embodiment, a pattern data generating apparatus comprises a storage unit that stores a table defining direct self assembly information that combines a direct self assembly material, a film thickness of the direct self assembly material, and a process condition for the direct self assembly material according to a pattern dimension, a division unit that divides layout data of a device based on the pattern dimension to generate divided layouts, an extraction unit that extracts the direct self assembly information corresponding to the pattern dimension of the divided layout from the table, and a generation unit that generates pattern data by allocating the direct self assembly information extracted by the extraction unit to the divided layouts.

Abstract: Certain embodiments provide a method of manufacturing an organic thin film solar cell comprising forming, on a first electrode, a first transport layer having an uneven pattern and a photoelectric conversion layer provided on a surface of the uneven pattern, forming a second transport layer on a second electrode, and bringing the uneven pattern having the photoelectric conversion layer is formed thereon into contact with the second transport layer to mold the second transport layer.

Abstract: According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.

Abstract: A high strength and high toughness cast steel material of the invention has a composition comprising 0.10 to 0.20% by mass of C, 0.10 to 0.50% by mass of Si, 0.40 to 1.20% by mass of Mn, 2.00 to 3.00% by mass of Ni, 0.20 to 0.70% by mass of Cr, and 0.10 to 0.50% by mass of Mo, and further comprising Fe and unavoidable impurities. The high strength and high toughness cast steel material of the invention is produced by subjecting an ingot having the above composition to annealing at 1,000 to 1,100° C., quenching at 850 to 950° C., tempering at 610 to 670° C., and then, if desired, stress-relief annealing at less than 610° C.

Abstract: A forging heat resistant steel of an embodiment contains in percent by mass C: 0.05-0.2, Si: 0.01-0.1, Mn: 0.01-0.15, Ni: 0.05-1, Cr: 8 or more and less than 10, Mo: 0.05-1, V: 0.05-0.3, Co: 1-5, W: 1-2.2, N: 0.01 or more and less than 0.015, Nb: 0.01-0.15, B: 0.003-0.03, and a remainder comprising Fe and unavoidable impurities.

Abstract: A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.

Abstract: According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template.

Abstract: According to the embodiments, exposure is performed on a resist on a substrate at a first focus position by using a phase shift mask in which a first light transmitting area and a second light transmitting area are formed adjacently via a light shielding pattern and a phase difference between light transmitting through the first light transmitting area and light transmitting through the second light transmitting area is ???, and exposure is performed on the resist at a second focus position different from the first focus position by using the phase shift mask.

Abstract: In the thermal power system, the electricity production efficiency may be improved by providing turbine members having the improved high temperature characteristic over the corresponding prior art turbine members. Turbine members may be provided by using high resistant steels composed of any one or ones selected from the group consisting of the components, including 0.08 to 0.13% of carbon (C), 8.5 to 9.8% of chromium (Cr), 0 to 1.5% of molybdenum (Mo), 0.10 to 0.25% of vanadium (V), 0.03 to 0.08% of niobium (Nb), 0.2 to 5.0% of tungsten (W), 1.5 to 6.0% of cobalt (Co), 0.002 to 0.015% of boron (B), 0.015 to 0.025% of nitrogen (N), and optionally, 0.01 to 3.0% of rhenium (Re), 0.1 to 0.50% of silicon (Si), 0.1 to 1.0% of manganese (Mo), 0.05 to 0.8% of nickel (Ni) and 0.1 to 1.3% of cupper.

Abstract: A method for manufacturing a semiconductor device, includes: supplying a liquid resist containing a water-repellent additive to a surface of a rotating semiconductor wafer fixed to a rotary support to form a resist film to a design thickness on the surface of the semiconductor wafer; spin drying the resist film; bringing a liquid into contact with the resist film and exposing the resist film through the liquid after the spin drying; developing the resist film to form a resist pattern; and performing processing on the semiconductor wafer. A condition for adjusting contact angle between the resist film surface and the liquid is controlled so that the contact angle assumes a desired value, the condition including at least one selected from the group consisting of spin drying time for the resist film, resist temperature during the supplying, pressure of an atmosphere above the semiconductor wafer surface, and humidity of the atmosphere above the semiconductor wafer surface.

Abstract: An object of the present invention is to provide a method of manufacturing semiconductor device, in which a water repellent layer on a resist film surface is removed to improve pattern-size controllability in a developing process. The pattern controllability of a resist pattern is improved by forming the resist pattern in such a manner that a resist film is formed on a surface of a semiconductor substrate, by using an exposure system, a liquid is filled between the resist film and a projection optical system to expose the resist film through the liquid, a water repellent layer formed on a surface of the resist film is removed after exposure, the substrate is thermally-processed after the water repellent layer is remove, and the resist film is developed.

Abstract: An Ni—Fe based superalloy forging material including 30 to 40 wt % of Fe, 14 to 16 wt % of Cr, 1.2 to 1.7 wt % of Ti, 1.1 to 1.5 wt % of Al, 1.9 to 2.7 wt % of Nb, 0.05 wt % or less of C and the remainder of Ni and inevitable impurities is solution-treated and aged, and thereby ?? phase (Ni3Al) having an initial mean particle size of about 50 to about 100 nm is precipitated. This superalloy is excellent in high-temperature strength and high-temperature ductility and can produce a large forged product of 10 ton or more. Therefore, this material is suitable for use as the material of a steam turbine rotor having a main steam temperature of 650° C. or more.

Abstract: According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

Abstract: According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

Abstract: Provided is a heat-resisting steel, which can be operated stably under a high-temperatures steam environment and which provides an excellent economic advantage. The particular heat-resisting steel comprises 0.25 to 0.35% by mass of C, not more than 0.15% by mass of Si, 0.2 to 0.8% by mass of Mn, 0.3 to 0.6% by mass of Ni, 1.6 to 1.9% by mass of Cr, 0.26 to 0.35% by mass of V, 0.6 to 1.1% by mass of Mo, 0.6 to 1.4% by mass of W, 1.3 to 1.4% by mass of Mo+W/2, and the balance of Fe and unavoidable impurities.

Abstract: A photomask comprises a transparent substrate, a anti-reflection structure having a chromium oxide film, a chromium film and a chromium oxide film laminated in order on the major surface of the transparent substrate, an LiF film as a anti-reflection film formed on the surface of the first chromium oxide and at the interface between the chromium oxide film and the transparent substrate, and a spin-on-glass film formed on the surface of the chromium oxide film.

Abstract: In the thermal power system, the electricity production efficiency may be improved by providing turbine members having the improved high temperature characteristic over the corresponding prior art turbine members. Turbine members may be provided by using high resistant steels composed of any one or ones selected from the group consisting of the components, including 0.08 to 0.13% of carbon (C), 8.5 to 9.8% of chromium (Cr), 0 to 1.5% of molybdenum (Mo), 0.10 to 0.25% of vanadium (V), 0.03 to 0.08% of niobium (Nb), 0.2 to 5.0% of tungsten (W), 1.5 to 6.0% of cobalt (Co), 0.002 to 0.015% of boron (B), 0.015 to 0.025% of nitrogen (N), and optionally, 0.01 to 3.0% of rhenium (Re), 0.1 to 0.50% of silicon (Si), 0.1 to 1.0% of manganese (Mo), 0.05 to 0.8% of nickel (Ni) and 0.1 to 1.3% of cupper.

Abstract: A semiconductor device is fabricated by the steps of coating an underlayer formed on a semiconductor substrate with chemically amplified resist, exposing the resist to light, bringing the resist into contact with an alkaline developing solution with applying a magnetic field to the alkaline developing solution for conducting development to form a resist pattern, and etching the underlayer on the semiconductor substrate using the resist pattern as a mask.

Abstract: A chemically amplified resist is applied to a semiconductor substrate and subjected to post-apply bake, and exposed to light, then, the resist is treated with a vapor of an organic solvent such as PGMEA. By treating with the vapor of the organic solvent, acid diffusion in the resist in the post-exposure bake is suppressed, and a resist pattern having an excellent profile is obtained by development.

Abstract: A lithography process includes a step of forming an antireflective coating film on a substrate. A film is formed on the antireflective film and a radiation sensitive film is formed on the film. The radiation sensitive film is selectively exposed. During the selective exposing, the antireflective film covers the lower surface of the portion of film on which the radiation sensitive film is formed, and the antireflective coating film reduces reflections of radiation during the selective exposing of the radiation sensitive film. A fabrication process using the lithography process is also described.