Abstract: A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.

Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.

Abstract: According to an exemplary embodiment of the present invention, there are provided an organic treatment solution for patterning chemically amplified resist films, an organic treatment solution containing 1 ppm or less of an alkyl olefin having a carbon number of 22 or less and having a metal element concentration of 5 ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn, a pattern formation method, an electronic device manufacturing method, and an electronic device use the same.

Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.

Abstract: The pattern forming method of the invention includes (i) a step of forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent; (ii) a step of exposing the first film; (iii) a step of developing the exposed first film using a developer including an organic solvent to form a negative tone pattern; and (iv) a step of forming a second film on the second substrate so as to cover the periphery of the negative tone pattern.

Abstract: There is disclosed a method for manufacturing an organic processing fluid for patterning of a chemical amplification type resist film, comprising a step of causing a fluid containing an organic solvent to pass through a filtration device having a fluid input portion, a fluid output portion, and a filtration filter film provided in a flow path that connects the fluid input portion and the fluid output portion with each other, wherein an absolute value (|TI?To|) of a difference between a temperature (TI) of the fluid in the fluid input portion and a temperature (To) of the fluid in the fluid output portion is 3° C. or lower, a filtration speed of the fluid in the filtration device is 0.5 L/min/m2 or greater, and a filtration pressure by the fluid in the filtration device is 0.10 MPa or lower.

Abstract: A pattern forming method includes: (a) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition (I) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (b) exposing the first film; (c) developing the exposed first film using a developer containing an organic solvent to form a first negative pattern; (e) forming a second film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition (II) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (f) exposing the second film; and (g) developing the exposed second film using a developer containing an organic solvent to form a second negative pattern in this order.

Abstract: A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.

Abstract: An organic treatment liquid for patterning a resist film, in which a metal element concentration of each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn is 3 ppm or less and which can reduce generation of particles, in a negative tone pattern forming method for forming a miniaturized (for example, 30 nm node or less) pattern by particularly using an organic developer, a method of producing the organic treatment liquid for patterning a resist film, a storage container of the organic treatment liquid for patterning a resist film, a pattern forming method using the same, and a method of producing an electronic device can be provided.

Abstract: A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.

Abstract: The present invention has an object to provide a pattern peeling method which is excellent in peelability and causes less damage to a substrate, a method for manufacturing an electronic device, including the pattern peeling method, and an electronic device manufactured by the method for manufacturing an electronic device. The present invention includes a resist film forming step of applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film; an exposing step of exposing the resist film; a developing step of developing the exposed resist film using a developing liquid containing an organic solvent to form a negative-type pattern; and a peeling step of peeling the negative-type pattern using the following liquid A or B: A: a liquid containing a sulfoxide compound and/or an amide compound; or B: a liquid containing sulfuric acid and hydrogen peroxide.

Abstract: Provided is a pattern forming method including a step of applying a solvent (S) onto a substrate, a step of applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate, on which the solvent (S) has been applied, to form an actinic ray-sensitive or radiation-sensitive film, a step of exposing the actinic ray-sensitive or radiation-sensitive film, and a step of developing the exposed actinic ray-sensitive or radiation-sensitive film with a developing liquid containing an organic solvent to form a negative-type pattern.

Abstract: A pattern formation method which includes a process of forming an actinic ray sensitive or radiation sensitive film by coating a substrate with an actinic ray sensitive or radiation sensitive resin composition which contains a resin where the degree of solubility with respect to a developer which includes one or more types of organic solvents decreases due to an effect of an acid, a compound which generates an acid by irradiation with actinic rays or radiation, and a solvent, a process of exposing the actinic ray sensitive or radiation sensitive film via an immersion liquid, a process of heating the actinic ray sensitive or radiation sensitive film, and a process of developing the actinic ray sensitive or radiation sensitive film using the developer which includes an organic solvent in this order, in which a process of cleaning the actinic ray sensitive or radiation sensitive film is included after the film forming process and before the exposing process and/or after the exposing process and before the heatin

Abstract: There is disclosed a method for manufacturing an organic processing fluid for patterning of a chemical amplification type resist film, comprising a step of causing a fluid containing an organic solvent to pass through a filtration device having a fluid input portion, a fluid output portion, and a filtration filter film provided in a flow path that connects the fluid input portion and the fluid output portion with each other, wherein an absolute value (|TI?To|) of a difference between a temperature (TI) of the fluid in the fluid input portion and a temperature (To) of the fluid in the fluid output portion is 3° C. or lower, a filtration speed of the fluid in the filtration device is 0.5 L/min/m2 or greater, and a filtration pressure by the fluid in the filtration device is 0.10 MPa or lower.

Abstract: According to an exemplary embodiment of the present invention, there are provided an organic treatment solution for patterning chemically amplified resist films, an organic treatment solution containing 1 ppm or less of an alkyl olefin having a carbon number of 22 or less and having a metal element concentration of 5 ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn, a pattern formation method, an electronic device manufacturing method, and an electronic device use the same.

Abstract: There is provided a pattern forming method through self-organization of a block copolymer, containing an annealing step after application of a self-organizing composition for forming pattern that contains a block copolymer containing a block having a repeating unit represented by the specific general formula, and contains an organic solvent, to a substrate, and wherein after a microphase-separated structure is formed in the annealing step, one domain thereof is selectively removed to form a pattern.

Abstract: The pattern forming method of the invention includes (i) a step of forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) capable of increasing the polarity by the action of an acid to decrease the solubility in a developer including an organic solvent; (ii) a step of exposing the first film; (iii) a step of developing the exposed first film using a developer including an organic solvent to form a negative tone pattern; and (iv) a step of forming a second film on the second substrate so as to cover the periphery of the negative tone pattern.

Abstract: A pattern forming method includes: (a) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition (I) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (b) exposing the first film; (c) developing the exposed first film using a developer containing an organic solvent to form a first negative pattern; (e) forming a second film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition (II) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (f) exposing the second film; and (g) developing the exposed second film using a developer containing an organic solvent to form a second negative pattern in this order.

Abstract: A polybenzoxazole precursor is represented by the following formula (1): wherein R1a to R4a, R1b to R4b, X1, Y1 and m are defined in the specification.

Abstract: Provided is a method of forming a pattern, including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing an organic solvent, wherein the developer contains an ester and a ketone having 7 or more carbon atoms.