Abstract: A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substrate 1 with H2 gas under Si-excess atmosphere within a temperature range of 1000° C. to 1350° C., a step of depositing, by a CVD method, a SiO2 film 2 on the SiC substrate 1 at such a temperature that the SiC substrate 1 is not oxidized, and a step of thermally treating the SiC substrate 1, on which the SiO2 film 2 is deposited, in NO gas atmosphere within a temperature range of 1150° C. to 1350° C.

Abstract: A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substrate 1 with H2 gas at a temperature of 1200° C. or more, a step of forming a SiO2 film 3, 4 on the SiC substrate under conditions where the SiC substrate is not oxidized, and a step of thermally treating the SiC substrate formed with the SiO2 film in N2 gas atmosphere at a temperature of 1350° C. or more.

Abstract: The method for manufacturing a crystal for a synthetic gem includes the step of preparing a SiC single crystal including an n-type impurity, and the step of irradiating the SiC single crystal with an electron beam to generate a carbon vacancy in the SiC single crystal. Irradiation energy and dose in electron beam irradiation are set such that the density of the carbon vacancy is higher than the density of the n-type impurity.

Abstract: A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0×1022 cm-3 or more, a SiO2 layer that is formed on the SiC semiconductor layer and that has a connection surface contiguous to the SiC semiconductor layer and a non-connection surface positioned on a side opposite to the connection surface, a carbon-density-decreasing region that is formed at a surface layer portion of the connection surface of the SiO2 layer and in which a carbon density gradually decreases toward the non-connection surface of the SiO2 layer, and a low carbon density region that is formed at a surface layer portion of the non-connection surface of the SiO2 layer and that has a carbon density of 1.0×1019 cm-3 or less.

Abstract: A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0×1022 cm?3 or more, a SiO2 layer that is formed on the SiC semiconductor layer and that has a connection surface contiguous to the SiC semiconductor layer and a non-connection surface positioned on a side opposite to the connection surface, a carbon-density-decreasing region that is formed at a surface layer portion of the connection surface of the SiO2 layer and in which a carbon density gradually decreases toward the non-connection surface of the SiO2 layer, and a low carbon density region that is formed at a surface layer portion of the non-connection surface of the SiO2 layer and that has a carbon density of 1.0×1019 cm?3 or less.

Abstract: The method for manufacturing a crystal for a synthetic gem includes the step of preparing a SiC single crystal including an n-type impurity, and the step of irradiating the SiC single crystal with an electron beam to generate a carbon vacancy in the SiC single crystal. Irradiation energy and dose in electron beam irradiation are set such that the density of the carbon vacancy is higher than the density of the n-type impurity.

Abstract: A semiconductor device includes a SiC semiconductor layer that has a carbon density of 1.0×1022 cm?3 or more, a SiO2 layer that is formed on the SiC semiconductor layer and that has a connection surface contiguous to the SiC semiconductor layer and a non-connection surface positioned on a side opposite to the connection surface, a carbon-density-decreasing region that is formed at a surface layer portion of the connection surface of the SiO2 layer and in which a carbon density gradually decreases toward the non-connection surface of the SiO2 layer, and a low carbon density region that is formed at a surface layer portion of the non-connection surface of the SiO2 layer and that has a carbon density of 1.0×1019 cm?3 or less.

Abstract: A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.

Abstract: A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate.

Abstract: A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate.

Abstract: A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Abstract: A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)?5×1018/cm3; and 0.01%?(Concentration of Ti)/(Concentration of Al)?20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)?5×1018/cm3; and 1×1017/cm3?(Concentration of Ti)?1×1018/cm3.

Abstract: A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate.

Abstract: A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)?5×1018/cm3; and 0.01%?(Concentration of Ti)/(Concentration of Al)?20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)?5×1018/cm3; and 1×1017/cm3?(Concentration of Ti)?1×1018/cm3.

Abstract: A method of epitaxial growth of a 4H—SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H—SiC single crystal on a 4H—SiC single crystal substrate by epitaxial growth while inclining an epitaxial growth plane of the substrate from a (0001) plane of the 4H—SiC single crystal by an off-angle of at least 12 degrees and less than 30 degrees in a <11-20> axial direction, and a 4H—SiC single crystal obtained by the same.

Abstract: A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.

Abstract: One atomic layer of Si atoms 3 is grown on an Si-terminated SiC surface 1a having an Si polar face, and one atomic layer of C atoms 5 is further grown thereon. Then, Si and C are supplied to form an SiC layer. The surface of the SiC layer thus grown is a C polar face opposite to the Si polar face. That is, according to the above-described step, it is possible to grow an SiC polarity-reversed layer 1x having a C polarity on an SiC layer 1 having an Si polarity, with one atomic layer of an Si intermediate layer b interposed therebetween. Consequently, it is possible to provide a technique to reverse the polarity of SiC on the surface.

Abstract: A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

Abstract: A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

Abstract: A silicon carbide (SiC) substrate is provided with an off-oriented {0001} surface whose off-axis direction is <11-20>. A trench is formed on the SiC to have a stripe structure extending toward a <11-20> direction. An SiC epitaxial layer is formed on an inside surface of the trench.